STMICROELECTRONICS TEA2019

TEA2019
CURRENT MODE SWITCHING
POWER SUPPLY CONTROL CIRCUIT
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DIRECT DRIVE OF THE EXTERNAL
SWITCHING TRANSISTOR
POSITIVE AND NEGATIVE OUTPUT CURRENTS UP TO 0.5A
CURRENT LIMITATION
TRANSFORMER DEMAGNETIZATION AND
POWER TRANSISTOR SATURATION SENSING
FULL OVERLOAD AND SHORT-CIRCUIT
PROTECTION
PROPORTIONAL BASE CURRENT DRIVING
LOW STANDBY CURRENT BEFORE STARTING (1.6mA)
SYNCHRONIZATION CAPABILITY WITH INTERNAL PLL
THERMAL PROTECTION
Due to its current mode regulation, the TEA2019
facilitates design of power supplies with following
features :
High stability regulation loop.
Automatic input voltage feed-forward in discontinuous mode fly-back.
Automatic pulse-by-pulse current limitation.
Typical applications : Video Display Units, TV sets,
typewriters, micro-computers and industrial applications. For more details, see application
note AN406/0591.
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DIP 14
(Plastic package)
DESCRIPTION
The TEA2019 is an 14-pin DIP low cost integrated
circuit designed for the control of switch mode
power supplies. It has the same basic functions as
the TEA2018Abut with synchronization capability
by internal PLL. It is particularly suitable for applications where oscillator synchronization is required.
ORDER CODE : TEA2019
PIN CONNECTIONS
1
14
NEGATIVE SUPPLY (OUTPUT STAGE)
AUXILIARY OUTPUT SUPPLY
2
13
SUBSTRATE
POSITIVE SUPPLY VOLTAGE
3
12
I C SAMPLE (NEGATIVE)
SATURATION SENSING
4
11
GROUND
DEMAGNETIZATION SENSING
5
10
OSCILLATOR CAPACITOR
ERROR AMPLIFIER NON-INVERTING INPUT
6
9
OSCILLATOR REFERENCE CURRENT
7
8
PLL OUTPUT
SYNCHRONIZATION INPUT
August 1992
2019-01.EPS
OUTPUT
1/7
TEA2019
14
V
13
Substrate
3.2V
12
I SENSE
11
Ground
R
&
1
V REF
2019-02.EPS
Feed-back 6
TEA2019
-1V
VOLTAGE
LIMITATION
x 50
80%
DUTY CYCLE
LIMITATION
V CC
Ct 10
OSCILLATOR
Rt 9
PHASE
LOCKED
LOOP
Sync. 7
THERMAL
SHUT-DOWN
S
Sampling
Pulse
01.V
Demagnetization
Sensing
V CC ”good”
Bias
&
FLIP
FLOP
Q
4
V CE Monitoring
1
IC
RECOPY
Q
SWITCH
3
V CC
V CC
5
PLL Out 8
C
o
mp
ara
tor
IS
V REF = 2.4V
Undervoltage
DELAY
200ms
2
V AUX
1 Output
BLOCK DIAGRAM
Symbol
+
V CC
V(aux)
–
V CC
IO (peak)
II
Tj
Toper
Tstg
2/7
Parameter
Positive Supply Voltage
Auxiliary Output Supply Voltage
Negative Supply Voltage
Peak Output Current (duty cycle < 5%)
Input Current
Pins 4-5
Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
Value
15
15
–5
±1
±5
150
– 20, + 70
– 40, + 150
Unit
V
V
V
A
mA
°C
°C
°C
2019-01.TBL
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
Symbol
Rth (j-a)
Parameter
Junction-ambient Thermal Resistance
Value
80
Unit
°C/W
2019-02.TBL
TEA2019
ELECTRICAL OPERATING CHARACTERISTICS
Tamb = + 25oC, potentials referenced to ground (unless otherwise specified)
τmax
AV
+
II
V(REF)
∆V(REF)
∆T
TOSC
∆fOSC
∆T
∆fOSC
∆VCC
ton(min)
Parameter
Positive Supply Voltage
Negative Supply Voltage
+
Minimum positive supply voltage required for starting (V CC rising)
Minimum positive voltage below which device stops operating (V+CC falling)
+
Hysteresis on V CC Threshold
+
Standby Supply Current Before Starting [V CC < VCC(start)]
Current Limitation Threshold Voltage (pin 12)
Collector Current Sensing Input Resistance
Demagnetization Sensing Threshold
Demagnetization Sensing Input Current (pin 5 grounded)
Maximum Duty Cycle
Error Amplifier Gain
Error Amplifier Input Current (non-inverting input) (pin 6)
Internal Reference Voltage
Min.
6.6
–1
Typ.
8
–3
6
4.2
4.9
0.7
1.1
1
–1100 –1000
1000
75
100
1
70
80
50
2
2.3
2.4
125
2.5
–4
Reference Voltage Temperature Drift
10
Oscillator Free-running Period ( R = 59kΩ, C = 1.5nF)
Oscillator Frequency Drift with Temperature
Max.
15
–5
6.6
5.6
1.6
1.6
–880
+
(V CC
60
= + 8V)
Oscillator Frequency Drift with V+CC (+ 8V < V+CC < + 14V)
Minimum Conducting Time (Ct = 1nF)
65
Unit
V
V
V
V
V
mA
mV
Ω
mV
µA
%
µA
V
V/°C
70
µs
0.05
%/°C
0.5
%/V
2
µs
2019-03.TBL
Symbol
+
V CC
VCC
VCC(start)
VCC(stop)
+
∆ V CC
ICC(sb)
Vth (Ic)
R(Ic )
IS
Typ.
0.5
20
Max.
2.5
Unit
V
kΩ
Min.
Typ.
100
8
8
Max.
Unit
Hz/µA
µs
µs
Typ.
3.2
Max.
Unit
V
µA
kΩ
Max.
Unit
V
V
A
kHz
2019-04.TBL
Min.
2019-05.TBL
Parameter
Peak to Peak Sawtooth Voltage
Input Impedance
2019-06.TBL
Symbol
V7pp
R (7)
2019-07.TBL
SYNCHRONIZATION INPUT (pin 7)
PLL CHARACTERISTICS (see Test Circuit)
Symbol
∆T
Parameter
Frequency Sensitivity
Capture Range (TOSC = 64µs Typ.)
TSYN max - TOSC
TOSC - TSYN min
5.5
4.5
SATURATION SENSING (pin 4)
Symbol
V(4)
I(4)
Parameter
Input Threshold
Input Current (V4 > 3.2V)
Input Internal Resistance
Min.
50
1
RECOMMENDED OPERATING CONDITIONS
Symbol
+
V CC
VCC
IO
Foper
Parameter
Positive Supply Voltage
Negative Supply Voltage
Output Current
Operating Frequency
Min.
Typ.
8
3
0.5
30
3/7
TEA2019
TYPICAL CIRCUIT
V6
V5
V3
470Ω
22nF
10Ω
10nF
AS1
4.7µF
22nF
8.2kΩ
10nF
7
6
5
4
3
2
1
10kΩ
RAMP
GENERATOR
IC
TEA2019
0V
8
22nF
56kΩ
10
12
13
14
-1V
4.7µF
59kΩ
1%
1.5nF
GENERAL DESCRIPTION
(see application note AN406/0591)
Operating Principles (Figure 1)
On every period, the beginning of the conduction
time of the transistor is triggered by the fall of the
oscillator saw-tooth which acts as clock signal. The
period Tosc is given by :
Tosc ≈ 0.69 Ct (Rt + 2000)
(Tosc in seconds, Ct in Farad, Rt in Ω)
The end of the conduction time is determined by a
signal issued from comparing the following signals.
a) the sawtooth waveform representing the
collector current of the switching transistor,
sampled across the emitter shunt resistor.
b) the output of the error amplifier.
Base Drive
• Fast turn-on
On each period, a current pulse ensures fast
transistor switch-on.
This pulse performs also the ton(min) function at
the beginning of the conduction.
• Proportional base drive
In order to save power, the positive base current
after the starting pulse becomes an image of the
collector current.
IC
The ratio is programmed as follows (Figure 2).
IB
IC RB
=
IB RE
V12
V14
Figure 1 : Current Mode Control
Vi
OUTPUT
FILTER
FLIP-FLOP
OSCILLATOR
S
ERROR
AMPLIFIER
IC
Q
V REF
ERROR
SIGNAL
R
COMPARATOR
Re
I C SENSE
OSCILLATOR
SAWTOOTH
t
I C (sample)
Error
Signal
t
FLIP-FLOP
OUTPUT
t
2019-05.EPS / 2019-04.EPS
V10
47nF
2019-03.EPS
100Ω
3.3nF
4/7
11
LOAD
3.9kΩ
9
TEA2019
• Efficient and fast switch-off
When the positive base drive is removed, 1s
(typically) will elapse before the application of
negative current therefore allowing a safe and
rapid collector current fall.
Safety Functions
• Overload & short-circuit protection
When the voltage applied to pin 12 exceeds the
current limitation thershold voltage [Vth(Ic)], the
output flip-flop is reset and the transistor is turned
off.
The shunt resistor Re must be calculated so as
to obtain the current limitation threshold on pin
12 at the maximum allowable collector current.
• Demagnetization sensing
This function disables any new conduction cycle
of the transistor as long as the core is not completely demagnetized.
When not used, pin 5 must be grounded.
• ton(max)
Outside the regulation area and in the absence
of current limitation, the maximum conduction
time is set at about 70% of the period.
• ton(min)
A minimum conducting time is ensured during
each period (see Figure 2).
• Supply voltage monitoring
The TEA2019 will stop operatingif VCC+ on Pin 3
falls below the threshold level VCC(stop).
Figure 2
IC
COLLECTOR
CURRENT I C
t
0
IC
IB
t on(min)
RB
BIAS
CURRENT
1
IB
IB
12
Starting Process (Figure 3)
Prior to starting, a low current is drawn from the
high voltage source through a high value resistor.
This current charges the power supply storage
capacitor of the device.
No output pulses are available before the voltage
on pin 3 has reached the threshold level [VCC(start),
V+CC rising].
During this time the TEA2019 draws only 1mA
(typically). When the voltage on pin 3 reaches this
threshold base drive pulses appear.
The energy drawn by these pulses tends to discharge the power supply storage capacitor. However a hysteresis of about 1.1V (typically) (∆ VCC)
is implemented to avoid the device from stopping.
Re
IC
t
0
2019-06.EPS
Re
RB
Figure 3 : Normal TEA2019 Start up Sequence
V CC
V CC (start)
6V
4.9V
V CC
V CC (stop)
t
5/7
2019-07.EPS
TEA2019
TEA2019
The TEA2019 has some additional capabilities
compared to the TEA2018A :
voltage in order to reduce the I.C. power dissipation.
For low power applications, the circuit can be
normally supplied by connecting pins 2 and 3
together.
• In order to protect the substrate (pin 13) from the
parasitic voltage peaks produced by negative
output current peaks at pin 14, the substrate
(pin 13) is internally separated from the negative
supply (pin 14). They must be externally connected together.
• The switching transistor saturation voltage can
be monitored at pin 4. To achieve this, a high
voltage diode must be connected between the
collector of the switching transistor and pin 4.
Also a resistor must be connected from pin 4 to
V+CC (see application diagram). This arrangement is useful when the chosen value of base
current is very low and as a consequence the
saturationvoltage will be high. In thisevent, when
VCE(sat) increases above 2.5V, the base current
is interrupted before the normal end of the period.
Remark : the TEA2019 can also operate without
this protection.
• The oscillator charge current its supplied through
an internal current generator,programmed externally - instead of using an external charging
resistor. The sawtooth so obtained is linear.
• The oscillator can be synchronized through an
internal PLL circuit. This feature provides synchronization between the external sync pulse
and the end of the switching transistor current.
The sync pulse can be for example the fly-back
pulse of a TV horizontal sweep circuit. As indicated in the application diagram, this pulse is
applied first to a R.C. network to obtain a low
voltage sawtooth and then to pin 7 of the circuit.
The PLL output (pin 8) supplies a correction
current to pin 9 through an external resistor, so
as to maintain the oscillator at the correct frequency (refer to application note AN406/0591 for
detailed information).
• In the TEA2019, the power supply of the positive
output stage is separated from the main power
supply, so that it can be supplied from a lower
TYPICAL APPLICATION
BYT11-800
47µF
385V
4 x 1N4007
1N4148 18 Ω
Sync.
Pulse
0.1µF
3.9Ω 1N4148
n3
10kΩ
82kΩ
120kΩ
1W
470µF
10µF
BYT11-800
n0
BYT
11-100
1.8kΩ
0.1µF
7
6
5
C2
33nF
4
n2
10Ω
10kΩ
10kΩ
3.3Ω
3
2
1
24V
0.5A
470µF
40V
1kΩ
3W
BYT11-100
BUV
46A
BYT11-1000
RF Filter
2 x 12mH
47nF
120V
0.4A
100µF
n1 160V
680Ω
3W
2.2nF
TEA2019
0.5A
8
9
10
11
12
13
0.47Ω
14
100Ω
56kΩ
3.9kΩ
3.3nF
56kΩ
22nF
1.5nF
10µF
4.7Ω
Primary Ground
Secondary Ground
..
.
6/7
PMAX = 60W
Free-running Frequency : 15kHz
155VRMS ≤ VAC ≤ 250VRMS
.
.
3 x 1N4001
120V ± 3%, 0.4A
24V ±3%, 0.5A
Monitoring
Outputs:
VCE
2019-08.EPS
Mains
Input
TEA2019
I
b1
L
a1
PACKAGE MECHANICAL DATA
14 PINS - PLASTIC DIP
b
B
e
E
Z
Z
e3
D
8
1
7
a1
B
b
b1
D
E
e
e3
F
i
L
Z
Min.
0.51
1.39
Millimeters
Typ.
Max.
1.65
Min.
0.020
0.055
0.5
0.25
Inches
Typ.
0.065
0.020
0.010
20
0.787
8.5
2.54
15.24
0.335
0.100
0.600
7.1
5.1
0.280
0.201
3.3
1.27
Max.
DIP14.TBL
Dimensions
PM-DIP14.EPS
F
14
0.130
2.54
0.050
0.100
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without noti ce. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I2C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips
I2C Patent. Rights to use these components in a I2C system, is granted provided that the system confo rms to
the I2C Standard Specifications as defined by Philips.
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