TN2130 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) TO-236AB* Die N1T❋ 300V 25Ω 2.4V TN2130K1 TN2130ND where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ High input impedance and high gain Applications ❏ Logic level interfaces – ideal for TTL and CMOS Package Option ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Drain Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* Gate Source -55°C to +150°C TO-236AB 300°C (SOT-23) top view * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2130 Thermal Characteristics Package ID (continuous)* TO-236AB ID (pulsed) 85mA Power Dissipation @ TA = 25°C θjc θja °C/W °C/W 0.36W 200 350 200mA IDR* IDRM 85mA 200mA * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ BVDSS Drain-to-Source Breakdown Voltage 300 VGS(th) Gate Threshold Voltage 0.8 ∆V GS(th) Max Unit Conditions V ID = 1mA, VGS = 0V 2.4 V VGS = VDS, ID = 1mA Change in VGS(th) with Temperature -5.5 mV/°C ID = 1mA, VGS = VDS IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µA VGS = 0V, VDS = Max Rating 100 µA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C mA VGS = 10V, VDS = 25V ID(ON) ON-State Drain Current 250 RDS(ON) Static Drain-to-Source ON-State Resistance 25 Ω VGS = 4.5V, ID = 120mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/°C VGS = 4.5V, ID = 120mA GFS Forward Transconductance Ω VDS = 25V, ID = 100mA CISS Input Capacitance 50 COSS Common Source Output Capacitance 15 CRSS Reverse Transfer Capacitance td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-OFF Delay Time 12 tf Fall Time 15 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time 250 m pF VGS = 0V, VDS = 25V, f = 1MHz ns VDD = 25V, ID = 120mA RGEN = 25Ω V ISD = 120mA, VGS = 0V ns ISD = 120mA, VGS = 0V 5 10 7 400 Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 TN2130 Typical Performance Curves Output Characteristics Saturation Characteristics 1.0 0.5 VGS = 10V 0.8 6V 0.4 4V 8V 6V 0.6 ID (amperes) ID (amperes) VGS =10V 4V 0.4 3V 0.2 0 10 20 30 40 3V 0.2 0.1 2V 2V 0 0.3 0 50 0 2 4 VDS (volts) 6 8 10 VDS (volts) Power Dissipation vs. Temperature Transconductance vs. Drain Current 1.0 1.0 VDS 0.8 VDS = 15V T A = -55°C 0.6 PD (watts) GFS (siements) 0.8 25°C 0.4 0.6 0.4 SOT-23 125°C 0.2 0.2 0 0 0 0.1 0.2 0.3 0.4 0 0.5 25 50 ID (amperes) 100 125 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) 1.0 SOT-23 (pulsed) ID (amperes) 75 TA (°C) SOT-23 (DC) 0.1 0.01 T A = 25°C 0.8 0.6 0.4 SOT-23 T A = 25°C P D = 0.36W 0.2 0 0.001 0 10 100 0.001 1000 VDS (volts) 0.01 0.1 tp (seconds) 3 1.0 10 TN2130 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.1 50 VGS = 4.5V RDS(ON) (ohms) BVDSS (normalized) 40 1.0 VGS = 10V 30 20 10 0.9 0 -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1.0 ID (amperes) Tj(°C) Transfer Characteristics VTH and RDS Variation with Temperature 2.0 1.0 0.6 VGS(th) (normalized) 0.8 ID (amperes) RDS(ON) @ 4.5V, 120mA 25°C 125°C TA = -55°C 0.4 1.6 1.1 1.2 1.0 0.8 0.9 VGS(th) @ 1mA 0.2 RDS(ON) (normalized) 1.2 = 15V VDS VDS = 15V 0.4 0.8 0 0 0 2 4 6 8 10 -50 0 50 100 150 Tj(°C) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 50 f = 1MHz VDS = 10V VGS (volts) C (picofarads) 8 CISS 25 CRSS 20 30 VDS = 40V 28pF 0 0 10 4 2 COSS 0 80 pF 6 40 0 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. 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