VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) TO-39 TO-92 100V 0.35Ω 8A VN2210N2 VN2210N3 MIL visual screening available Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Complementary N- and P-channel devices Applications ❏ Motor controls Package Options ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* DGS TO-39 Case: DRAIN SGD TO-92 -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 07/08/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN2210 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C θjc θja °C/W °C/W IDR* IDRM TO-92 1.2A 8.0A 1.0W 125 170 1.2A 8.0A TO-39 1.7A 10.0A 6.0W 21 125 1.7A 10.0A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min Typ BVDSS Drain-to-Source Breakdown Voltage 100 VGS(th) Gate Threshold Voltage 0.8 ∆V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current Conditions VGS = 0V, ID = 10mA 2.4 V VGS = VDS, ID = 10mA -4.3 -5.5 mV/°C VGS = VDS, ID = 10mA 1 100 nA VGS = ±20V, VDS = 0V 50 µA VGS = 0V, VDS = Max Rating 10 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C 3 4.5 A 17 0.4 Static Drain-to-Source ON-State Resistance Unit V 8 RDS(ON) Max 0.5 0.27 0.35 0.85 1.2 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 300 500 COSS Common Source Output Capacitance 125 200 CRSS Reverse Transfer Capacitance 50 65 td(ON) Turn-ON Delay Time 10 15 tr Rise Time 10 15 td(OFF) Turn-OFF Delay Time 50 65 tf Fall Time 30 50 VSD Diode Forward Voltage Drop 1.0 1.6 trr Reverse Recovery Time 500 Ω VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 1A VGS = 10V, ID = 4A %/°C VGS = 10V, ID = 4A Ω Symbol VDS = 25V, ID = 2A pF VGS = 0V, VDS = 25V f = 1 MHz 1.2 ns VDD = 25V ID = 2A RGEN = 10Ω V VGS = 0V, ISD = 4A ns VGS = 0V, ISD = 1A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 VN2210 Typical Performance Curves Output Characteristics Saturation Characteristics 20 20 VGS = 10V VGS = 10V 16 16 ID (amperes) ID (amperes) 8V 12 8 6V 4 8V 12 8 6V 4 4V 4V 3V 0 3V 0 0 10 20 30 40 0 50 2 4 VDS (volts) 8 10 Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 4.0 10 VDS = 25V 3.2 8 TA = -55°C 2.4 PD (watts) GFS (siemens) 6 VDS (volts) 25°C 1.6 150°C 0.8 TO-39 6 4 2 TO-92 0 0 0 0.8 1.6 2.4 3.2 4.0 0 25 50 ID (amperes) Thermal Resistance (normalized) TO-39 (pulsed) TO-39 (DC) ID (amperes) 125 150 1.0 TO-92 (pulsed) 1 TO-92 (DC) 0.1 0.1 100 Thermal Response Characteristics Maximum Rated Safe Operating Area 10 0.01 75 TC (°C) 0.8 0.6 0.4 TO-92 TC = 25°C PD = 1W 0.2 TC = 25°C 1 10 0 0.001 100 VDS (volts) 0.01 0.1 tP (seconds) 3 1 10 VN2210 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.0 1.1 V GS = 5V RDS(ON) (ohms) BVDSS (normalized) 0.8 1.0 VGS = 10V 0.6 0.4 0.2 0.9 0 -50 0 50 100 150 0 4 8 Transfer Characteristics 16 20 VGS(th) and R DS(ON) Variation with Temperature 1.2 10 2.0 VDS = 25V VGS(th) (normalized) TA = -55°C 6 25°C 4 150°C 1.6 1.0 1.2 0.9 0.8 VGS(th) @ 10mA 0.8 2 RDS(ON) (normalized) RDS(ON) @ 10V, 4A 1.1 8 ID (amperes) 12 ID (amperes) Tj (°C) 0.4 0.7 0 0 2 4 6 8 -50 10 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 500 f = 1MHz 8 VDS = 10V CISS VGS (volts) C (picofarads) 375 250 6 900 pF 4 VDS = 40V COSS 125 2 300 pF CRSS 0 0 0 10 20 30 0 40 2 4 6 8 10 QG (nanocoulombs) VDS (volts) 07/08/02 ©2002 Supertex Inc. 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