TP0610T P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) Order Number/Package TO-236AB* Product marking for SOT-23: -60V 10Ω -50mA TP0610T where ❋ = 2-week alpha date code T50❋ *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Package Option Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives Drain ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Gate Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* Source TO-236AB (SOT-23) top view -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TP0610T Thermal Characteristics Package ID (continuous)* SOT-23 ID (pulsed) -120mA Power Dissipation @ TA = 25°C θjc θja °C/W °C/W 0.36W 200 350 -400mA IDR* IDRM -120mA -400mA * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ Drain-to-Source Breakdown Voltage -60 VGS(th) Gate Threshold Voltage -1.0 ∆V GS(th) Unit Conditions V VGS = 0V, ID = -10µA -2.4 V VGS = VDS, ID = -1.0mA Change in VGS(th) with Temperature 6.5 mV/°C VGS = VDS, ID = -1.0mA IGSS Gate Body Leakage ±10 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -1 µA VGS = 0V, VDS = Max Rating -200 µA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C mA VGS = -4.5V, VDS = -10V 25 Ω VGS = -4.5V, ID = -25mA 10 Ω VGS = -10V, ID = -0.2A 1.0 %/°C VGS = -10V, ID = -0.2A ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance -50 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 60 COSS Common Source Output Capacitance 30 CRSS Reverse Transfer Capacitance 10 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 15 tf Fall Time 20 VSD Diode Forward Voltage Drop trr Reverse Recovery Time 60 m VDS = -10V, ID = -0.1A pF VGS = 0V, VDS = -25V f = 1 MHz ns VDD = -25V ID = -0.18A RGEN = 25Ω V VGS = 0V, ISD = -0.12A ns VGS = 0V, ISD = -0.4A -2.0 400 Ω BVDSS Max Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 2 TP0610T Typical Performance Curves Output Characteristics Saturation Characteristics -2.0 -2.0 VGS = -10V -1.6 -1.2 ID (amperes) ID (amperes) -1.6 -8V -0.8 -6V -1.2 VGS = -10V -8V -0.8 -6V -0.4 -0.4 -4V -4V -3V -3V 0 0 0 -10 -20 -30 -40 0 -50 -2 -4 -6 -8 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Temperature 0.5 0.5 0.4 0.4 -10 TA = -55°C 0.3 PD (watts) GFS (siemens) SOT-23 25°C 0.2 0.3 0.2 125°C 0.1 0.1 0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 25 50 ID (amperes) 75 125 100 150 TA (°C) Thermal Response Characteristics Maximum Rated Safe Operating Area -1.0 1.0 Thermal Resistance (normalized) SOT-23 (pulsed) ID (amperes) SOT-23 (DC) -0.1 TA = 25°C -0.01 -0.001 -0.1 -1.0 -10 0.8 0.6 0.4 PD = 0.36W 0 0.001 -100 VDS (volts) SOT-23 TA = 25°C 0.2 0.01 0.1 tp (seconds) 3 1.0 10 TP0610T Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 20 1.1 VGS = -4.5V RDS(ON) (ohms) BVDSS (normalized) 16 1.0 12 VGS = -10V 8 4 0.9 0 -50 0 50 100 150 0 -0.4 -0.8 Tj (°C) -1.6 -2.0 VGS(th) and RDS(ON) Variation with Temperature Transfer Characteristics -2.0 1.2 1.6 VDS = -25V RDS(ON) @ -10V, -0.5A 1.1 VGS(th) (normalized) TA = -55°C -1.2 25°C -0.8 125°C -0.4 1.4 1.0 VGS(th) @ -1mA 1.2 0.9 1.0 RDS(ON) (normalized) -1.6 ID (amperes) -1.2 ID (amperes) 0.8 0.8 0 0.7 0 -2 -4 -6 -8 -50 -10 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 100 f = 1MHz VDS = -10V -8 VGS (volts) C (picofarads) 75 50 CISS 25 COSS -6 -4 VDS = -40V 125 pF -2 CRSS 35 pF 0 0 0 -10 -20 -30 0 -40 VDS (volts) 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. 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