VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS(ON) VGS(th) Order Number / Package BVDGS (max) (max) TO-92 14-Pin P-DIP TO-243AA* Die† 50V 0.3Ω 2.4V VN3205N3 VN3205N6 VN3205N8 VN3205ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available Product marking for TO-243AA: Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. VN2L❋ Where ❋ = 2-week alpha date code Features ❏ Free from secondary breakdown ❏ Low power drive requirement Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Package Options Applications ❏ Motor controls D1 1 14 D4 ❏ Converters G1 2 13 G4 ❏ Amplifiers S1 3 12 S4 ❏ Switches NC 4 11 NC S2 5 10 S3 G2 6 9 G3 D2 7 8 D3 ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings top view Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* 14-pin DIP D G D S -55°C to +150°C SGD TO-92 300°C TO-243AA (SOT-89) Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN3205 Thermal Characteristics Package ID (continuous)* TO-92 1.2A SOT-89 * ‡ Power Dissipation @ TC = 25°C 8.0A 1.5A Plastic DIP † ID (pulsed) 1.0W 8.0A 1.5A θjc °C/W 125 1.6W (TA = 25°C) 15 ‡ 8.0A 3.0W IDR* IDRM 170 1.2A 8.0A † 1.5A 8.0A 1.5A 8.0A θja °C/W 78 41.6 ‡ 83.3 ‡ ID (continuous) is limited by max rated Tj. TA = 25°C. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Total for package. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage 50 VGS(th) Gate Threshold Voltage 0.8 ∆V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance Typ Max Unit Conditions V VGS = 0V, ID = 10mA 2.4 V VGS = VDS, ID = 10mA -4.3 -5.5 mV/°C VGS = VDS, ID = 10mA 1 100 nA VGS = ±20V, VDS = 0V 10 µA VGS = 0V, VDS = Max Rating 1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C 3.0 14 A VGS = 10V, VDS = 5V TO-92 and P-DIP 0.45 Ω VGS = 4.5V, ID = 1.5A SOT-89 0.45 Ω VGS = 4.5V, ID = 0.75A TO-92 and P-DIP 0.3 Ω VGS = 10V, ID = 3A SOT-89 0.3 Ω VGS = 10V, ID = 1.5A 1.2 %/°C VGS = 10V, ID = 3A ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance COSS 0.85 1.0 1.5 220 300 Common Source Output Capacitance 70 120 CRSS Reverse Transfer Capacitance 20 30 td(ON) Turn-ON Delay Time tr Rise Time 15 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 25 VSD Diode Forward Voltage Drop trr Reverse Recovery Time Ω Symbol VDS = 25V, ID = 2A pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 25V ID = 2A RGEN = 10Ω 10 1.6 300 V VGS = 0V, ISD = 1.5A ns VGS = 0V, ISD = 1A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 VN3205 Typical Performance Curves Output Characteristics Saturation Characteristics 20 20 VGS = ID (amperes) ID (amperes) VGS = 10V 16 8V 12 8 6V 4 16 10V 12 8V 8 6V 4 4V 4V 3V 3V 0 0 0 10 20 30 40 0 50 2 4 6 8 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Temperature 5 10 2.0 TO-243AA (T A = 25°C) VDS = 25V 4 1.6 3 PD (watts) GFS (siemens) P-DIP TA = -55°C 25°C 2 125°C 1 1.2 TO-92 0.8 0.4 0 0 0 2 4 6 8 10 0 25 50 ID (amperes) 125 100 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 1.0 10 Thermal Resistance (normalized) TO-243AA (pulsed) TO-92 (pulsed) P-DIP (pulsed) ID (amperes) 75 TC (°C) 1.0 TO-243AA (DC) TO-92 (DC) P-DIP (DC) 0.1 TC = 25°C .01 0 1 10 0.8 0.6 0.4 0.2 0 0.001 100 TO-243AA TA = 25°C PD = 1.6W TO-92 P D = 1W T C = 25°C 0.01 0.1 tp (seconds) VDS (volts) 3 1.0 10 VN3205 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.0 1.1 VGS = 4.5V RDS(ON) (ohms) BVDSS (normalized) 0.8 1.0 VGS = 10V 0.6 0.4 0.2 0.9 0 0 50 100 150 0 4 8 Transfer Characteristics 16 20 VGS(th) and R DS(ON) Variation with Temperature 10 1.6 1.2 VDS = 25V 8 RDS(ON) @ 10V, 3A 1.1 VGS(th) (normalized) TA = -55°C 25°C ID (amperes) 12 ID (amperes) Tj (° C) 6 125°C 4 2 1.0 1.2 0.9 1.0 VGS(th) @ 1mA 0.8 0 1.4 0.8 0.6 0.7 0 2 4 6 8 10 RDS(ON) (normalized) -50 -50 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 400 f = 1MHz VDS = 10V 8 VGS (volts) C (picofarads) 300 CISS 200 VDS = 40V 6 325 pF 4 100 COSS 2 CRSS 215 pF 0 0 0 10 20 30 40 0 1 2 3 4 5 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. 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