LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Advanced MOS Technology Features These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. The low threshold voltage and low onresistance characteristics are ideally suited for hand held battery operated applications. Ultra low threshold High input impedance Low input capacitance Fast switching speeds Low on resistance Freedom from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level interfaces Package Options Solid state relays (Note 1) Battery operated systems Photo voltaic drives Analog switches General purpose line drivers SGD Absolute Maximum Ratings TO-92 Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS NC 1 8 D Gate-to-Source Voltage ± 10V NC 2 7 D -55°C to +150°C S 3 6 D 300°C G 4 5 D Operating and Storage Temperature Soldering Temperature* *Distance of 1.6 mm from case for 10 seconds. SO-8 top view Note: See Package Outline section for dimensions. 7-23 LP0701 Thermal Characteristics Package * † °C/W θja °C/W IDR IDRM* 1W 125 170 -0.5A -1.25A 1.5W† 83 104† -0.7A -1.25A ID (continuous)* ID (pulsed)* Power Dissipation @ TC = 25°C TO-92 -0.5A -1.25A SO-8 -0.7A -1.25A θjc ID (continuous) is limited by max rated Tj. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage VGS(th) Gate Threshold Voltage ∆V GS(th) Typ Max Unit -16.5 Conditions V VGS = 0V, ID = -1mA -1.0 V VGS = VDS, ID = -1mA Change in VGS(th) with Temperature -4.0 mV/°C VGS = VDS, ID = -1mA IGSS Gate Body Leakage -100 nA VGS = ±10V, VDS = 0V IDSS Zero Gate Voltage Drain Current -100 nA VDS = -15V, VGS = 0V -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C -0.5 -0.7 -0.4 ON-State Drain Current ID(ON) RDS(ON) -0.6 -1.0 -1.25 -2.3 Static Drain-to-Source ON-State Resistance A VGS = VDS = -2V VGS = VDS = -3V A VGS = VDS = -5V Ω VGS = -2V, ID = -50mA 2.0 4.0 1.7 2.0 VGS = -3V, ID = -150mA 1.3 1.5 VGS = -5V, ID = -300mA ∆RDS(ON) Change in RDS(ON) with temperature GFS Forward Transconductance CISS Input Capacitance 120 250 COSS Common Source Output Capacitance 100 125 CRSS Reverse Transfer Capacitance 40 60 td(ON) Turn-ON Delay Time 20 tr Rise Time 20 VDD =-15V, ID = -1.25A, td(OFF) Turn-OFF Delay Time 30 RGEN = 25Ω tf Fall Time 30 VSD Diode Forward Voltage Drop 0.75 Ω 500 %/°C 700 -1.2 VGS = -5V, ID = -300mA m VDS = -15V, ID = -1A pF VGS = 0V, VDS = -15V, f = 1MHz ns -1.5 V VGS = 0V, ISD = -500mA Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 7-24 LP0701 Typical Performance Curves Output Characteristics Saturation Characteristics -2.5 -2.5 VGS = -5V VGS = -5V -2.0 -2.0 ID (amperes) ID (amperes) -4V -1.5 -1.0 -3V -0.5 -2V -4V -1.5 -1.0 -3V -0.5 -2V -1V -1V 0 0 0 -4 -8 -12 -16 0 -1 -2 VDS (volts) -4 -5 Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 2 1.0 VDS = -15V TA = -55°C 0.8 SO-8 TA = 25°C 0.6 PD (watts) GFS (siemens) -3 VDS (volts) TA = 125°C 0.4 1 TO-92 0.2 0 0 0 0 -2.0 -1.0 50 75 100 125 TC (°C) Maximum Rated Safe Operating Area Thermal Response Characteristics -10 150 Thermal Resistance (normalized) 1.0 TO-92/SO-8 (pulsed) ID (amperes) 25 ID (amperes) -1.0 TO-92 (DC) -0.1 SO-8 (DC) 0.8 0.6 TO-92 TC = 25°C PD = 1W 0.4 0.2 T C = 25°C -0.01 -0.1 -1.0 -10 0 0.001 -100 VDS (volts) 0.01 0.1 tP (seconds) 7-25 1.0 10 LP0701 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 VGS = -2V 1.1 VGS = -3V RDS(ON) (ohms) BVDSS (normalized) 8 1.0 VGS = -5V 6 4 2 0.9 0 0 50 100 150 -3 -2 Tj (°C) ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature 1.6 1.4 -2 VDS = -15V VGS(th) (normalized) 1.2 TA = -55°C ID (amperes) -1 0 TA = 25°C -1 TA = 125°C 1.0 1.2 0.8 1.0 RDS(ON) @ -5V, -300mA 0.6 0 1.4 V(th) @ -1mA 0.8 0.4 0 -1 -2 -3 -4 0.6 -50 -5 0 50 100 150 VGS (volts) Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 200 -10 f = 1MHz VDS = -10V CISS VGS (volts) C (picofarads) -8 100 COSS -20V -6 238pF -4 -2 CRSS 0 CISS = 115pF 0 0 -5 -10 0 -15 VDS (volts) 1 2 3 QG (nanocoulombs) 7-26 4 5 RDS(ON) (normalized) -50