VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) TO-92 TO-243AA* Die** 500V 13Ω 0.5A VN2450N3 VN2450N8 VN2450NW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels. ** Die in wafer form. Product marking for TO-243AA: Features VN4E❋ ❏ Free from secondary breakdown ❏ Low input and output leakage Where ❋ = 2-week alpha date code ❏ Low CISS and fast switching speeds ❏ High input impedance and high gain Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings D G Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* D S TO-243AA (SOT-89) SGD TO-92 -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN2450 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C θjc θja °C/W °C/W IDR* IDRM TO-243AA 0.25A 0.75A 1.6W† 15 78 † 0.25A 0.75A TO-92 0.2A 0.65A 1W 125 170 0.2A 0.65A * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ Max BVDSS Drain-to-Source Breakdown Voltage 500 VGS(th) Gate Threshold Voltage 1.5 ∆VGS(th) Change in VGS(th) with Temperature -5.5 IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µA VGS = 0V, VDS = Max Rating 1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance 20 ∆RDS(ON) Change in RDS(ON) with Temperature 1.7 GFS Forward Transconductance CISS Input Capacitance COSS Common Source Output Capacitance 50 CRSS Reverse Transfer Capacitance 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.5 VGS = 0V, ID = 2.0mA V VGS = VDS , ID = 1.0mA mV/°C VGS = VDS , ID = 1.0mA 0.5 A Ω 13 50 Conditions V %/°C m Ω ID(ON) Unit VGS = 10V, VDS = 25V VGS = 4.5V, ID = 100mA VGS = 10V, ID = 400mA VGS = 10V, ID = 400mA VDS = 25V, ID = 200mA 150 pF VGS = 0V, VDS = 25V f = 1.0 MHz ns VDD = 25V, ID = 250mA, RGEN = 25Ω V VGS = 0V, ISD = 400mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 VN2450 Typical Performance Curves Output Characteristics Saturation Characteristics VGS = 10V 8V 1.2 1.0 VGS = 10V 1.0 0.8 ID (Amperes) ID (Amperes) 6V 0.8 5V 0.6 8V 6V 0.6 5V 0.4 0.4 4V 4V 0.2 0.2 3V 0 0 10 20 30 40 3V 0 0 50 VDS (Volts) 2 4 6 8 10 VDS (Volts) Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 2.0 0.5 VDS = 25V 1.6 SOT-89 TA = -55°C PD (Watts) GFS (siemens) 0.4 0.3 TA = 25°C 1.2 0.8 TO-92 0.2 0.4 0.1 TA = 125°C 0 0 0 0.2 0.4 0.6 0.8 0 25 50 1.0 75 100 125 150 TC (°C) ID (Amperes) Maximum Rated Safe Operating Area Thermal Response Characteristics SOT-89 (pulsed) 1.0 1.0 Thermal Resistance (normalized) ID (amperes) TO-92 (pulsed) SOT-89 TO-92 0.1 0.01 SOT-89 P D = 1.6W T C = 25°C 0.8 0.6 0.4 0.2 TO-92 P D = 1W T C = 25°C T C = 25°C 0 0.001 1 10 100 1000 0.001 VDS (Volts) 0.01 0.1 tp (seconds) 3 1.0 10 VN2450 Typical Performance Curves On Resistance vs. Drain Current BVDSS Variation with Temperature 30 25 1.1 RDS(ON) (ohms) BVDSS (Normalized) 1.2 1.0 VGS = 4.5V 20 15 10 VGS = 10V 0.9 5 0 0 50 100 0 150 0.6 0.9 1.2 1.5 TJ (°C) ID (Amperes) Transfer Characteristics VGS(TH) and RDS(ON) w/ Temperature 1.2 3.0 1.5 VDS = 25V RDS(on) @ 10V, 0.4A TA = -55°C 1.0 1.35 VGS(th) (normalized) ID (Amperes) 0.3 0.8 TA = 25°C 0.6 0.4 2.5 VGS(th) @ 1mA 1.2 2.0 1.05 1.5 0.9 1.0 0.75 0.5 RDS(ON) (normalized) 0.8 -50 TA = 125°C 0.2 0.6 0.0 0 1 2 3 4 5 -50 6 -25 0 25 VGS (Volts) 50 75 100 125 0.0 150 TJ (°C) Gate Drive Dynamic Characteristics Capacitance vs. Drain Source Voltage 10 300 ID = 0.5A f = 1MHz VDS=10V 8 VGS (volts) C (picofarads) 225 CISS 150 VDS=40V 6 4 75 2 COSS 0 CRSS 0 10 20 30 0 40 0 1.0 2.0 3.0 4.0 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. 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