TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A TP2640LG TP2640N3 TP2640ND MIL visual screening available. Features Low Threshold DMOS Technology ❏ Low threshold — -2.0V max. These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications Package Options ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches SGD TO-92 Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* NC 1 8 D NC 2 7 D 3 6 4 5 S G D D SO-8 top view -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TP2635/TP2640 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C θjc θja °C/W °C/W IDR* IDRM SO-8 -210mA -1.25A 1.3W† 24 96† -210mA -1.25A TO-92 -180mA -0.8A 1.0W 125 170 -180mA -0.8A * ID (continuous) is limited by max rated Tj. † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min Drain-to-Source Breakdown Voltage BVDSS TP2640 -400 TP2635 -350 VGS(th) Gate Threshold Voltage ∆VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance Typ -0.8 Max Unit V VGS = 0V, ID = -2.0mA -2.0 V VGS = VDS, ID= -1.0mA 5.0 mV/°C VGS = VDS, ID= -1.0mA -100 nA VGS = ± 20V, VDS = 0V -1 µA VGS = 0V, VDS = -100V -10 µA VGS = 0V, VDS = Max Rating -1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C 0.7 A 12 Conditions 15 11 15 11 15 ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 GFS Forward Transconductance CISS Input Capacitance COSS Common Source Output Capacitance 50 CRSS Reverse Transfer Capacitance 12 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 60 tf Fall Time 40 VSD Diode Forward Voltage Drop trr Reverse Recovery Time 200 VGS = -2.5V, ID = -20mA Ω VGS = -4.5V, ID = -150mA VGS = -10V, ID = -300mA %/°C VGS = -10V, ID = -300mA VDS = -25V, ID = -300mA m 300 pF VGS = 0V, VDS = -25V f = 1 MHz ns VDD = -25V, ID = -300mA, RGEN = 25Ω -1.8 300 VGS = -10V, VDS = -25V Ω Symbol V VGS = 0V, ISD = -200mA ns VGS = 0V, ISD = -200mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 2 TP2635/TP2640 Typical Performance Curves Output Characteristics Saturation Characteristics -2.0 -1.0 VGS = -10V -8V -8V -6V -1.6 -6V -0.8 -4V -1.2 -0.8 ID (amperes) ID (amperes) VGS = -10V -4V -0.4 -0.6 -0.4 -3V -0.2 -3V 0 0 0 -10 -30 -20 -40 0 -50 -2 -4 VDS (volts) 1.0 2.0 0.8 1.6 VDS = -25V -10 SO-8 0.6 PD (watts) GFS (siemens) -8 Power Dissipation vs. Temperature Transconductance vs. Drain Current TA = -55°C 0.4 -6 VDS (volts) 0.2 1.2 TO-92 0.8 0.4 25°C 125°C 0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 25 50 ID (amperes) 75 125 100 150 TC (° C) Thermal Response Characteristics Maximum Rated Safe Operating Area -10 1.0 ID (amperes) -1.0 Thermal Resistance (normalized) SO-8 (pulsed) TO-92 (pulsed) SO-8 (DC) -0.1 TO-92 (DC) -0.01 TC = 25°C -10 -100 0.6 0.4 -1000 VDS (volts) TO-92 0.2 TC = 25°C PD = 1.0W 0 0.001 -0.001 -1 0.8 0.01 0.1 tp (seconds) 3 1.0 10 TP2635/TP2640 Typical Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 30 1.1 VGS = -2.5V VGS = -4.5V RDS(ON) (ohms) BVDSS (normalized) 24 1.0 18 12 VGS = -10V 6 0.9 0 -50 0 50 100 150 0 -0.4 -0.8 -1.2 -1.6 -2.0 Tj (° C) ID (amperes) Transfer Characteristics VTH and RDS Variation with Temperature -2.0 2.5 VDS = -25V 1.2 V(th) @ -1mA TA = -55°C -1.2 VGS(th) (normalized) ID (amperes) +125°C 25°C -0.8 2.0 1.0 1.5 0.8 1.0 RDS(ON)@ -10V, -0.3A 0.6 -0.4 RDS(ON) (normalized) -1.6 0.5 0.4 0 0 0 -2 -4 -6 -8 -50 -10 0 50 VGS (volts) 100 150 Tj (° C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 400 f = 1MHz -8 300 VGS (volts) C (picofarads) 678pF CISS 200 -6 VDS = -10V -4 VDS = -40V 100 -2 COSS 263pF CRSS 0 0 -10 -20 -30 0 0 -40 1 2 3 4 5 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. 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