TN0604 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) VGS(th) (max) 40V 0.75Ω 4.0A 40V 1.0Ω 4.0A Order Number / Package TO-92 SOW-20* 1.6V TN0604N3 — 1.6V — TN0604WG * Same as SO-20 with 300 mil wide body. Features Low Threshold DMOS Technology ❏ Low threshold — 1.6V max. These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Complementary N- and P-channel devices Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options ❏ Low input and output leakage ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings SGD Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* * TO-92 SOW-20 -55°C to +150°C 300°C Notes: 1. See Package Outline section for dimensions. 2. See Array section for quad pinouts. Distance of 1.6 mm from case for 10 seconds. 02/06/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN0604 Thermal Characteristics Package ID (continuous)* TO-92 ID (pulsed) 700mA SOW-20 Power Dissipation @ TC = 25°C 4.6A θjc °C/W 1W IDR* θja °C/W 125 170 IDRM 700mA 4.6A Refer to Enhancement Mode MOSFET Arrays Section. * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Unit Conditions VGS = 0V, ID = 2.0mA 1.6 V VGS = VDS, ID = 1.0mA -4.5 mV/°C VGS = VDS, ID = 2.5mA Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V Zero Gate Voltage Drain Current 10 µA VGS = 0V, VDS = Max Rating 1.0 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C 40 VGS(th) Gate Threshold Voltage 0.6 ∆V GS(th) Change in VGS(th) with Temperature IGSS IDSS -3.8 ON-State Drain Current Static Drain-to-Source ON-State Resistance 1.5 2.1 4.0 7.0 A TO-92/SOW-20 1.0 1.6 TO-92 0.6 0.75 SOW - 20 VGS = 5V, VDS = 20V VGS = 10V, VDS = 20V Ω VGS = 5V, ID = 0.75A Ω VGS = 10V, ID = 1.5A %/°C VGS = 10V, ID = 1.5A Ω Drain-to-Source Breakdown Voltage RDS(ON) Max V BVDSS ID(ON) Typ VDS = 20V, ID = 1.5A pF VGS = 0V, VDS = 20V f = 1 MHz 1.0 ∆RDS(ON) Change in RDS(ON) with Temperature 0.5 GFS Forward Transconductance CISS Input Capacitance 140 190 COSS Common Source Output Capacitance 75 110 CRSS Reverse Transfer Capacitance 25 50 td(ON) Turn-ON Delay Time 10 tr Rise Time 6.0 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.2 trr Reverse Recovery Time 300 0.5 0.75 0.8 ns 1.8 VDD = 20V ID = 0.5A RGEN = 25Ω V VGS = 0V, ISD = 1.5A ns VGS = 0V, ISD = 1A Notes: 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2: All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 TN0604 Typical Performance Curves Output Characteristics Saturation Characteristics 10 10 8 8 VGS = VGS = 9V 6 ID (amperes) ID (amperes) 10V 8V 7V 4 6V 9V 8V 4 7V 6V 5V 2 10V 6 5V 2 4V 4V 3V 3V 0 0 10 20 30 40 0 50 0 2 4 6 8 10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 2.0 2.0 TA = -55°C PD (watts) GFS (siemens) VDS DS= 25V TA = 25°C 1.0 TA = 125°C 0 TO-92 1.0 0 0 1 2 3 4 5 6 7 0 50 25 Maximum Rated Safe Operating Area 100 125 150 Thermal Response Characteristics 10 1.0 Thermal Resistance (normalized) TO-92 (pulsed) ID (amperes) 75 TC (° C) ID (amperes) 1.0 TO-92 (DC) 0.1 0.8 0.6 0.4 TO-92 T C = 25°C P D = 1W 0.2 T C = 25°C 0.01 0.1 1 10 0 0.001 100 VDS (volts) 0.01 0.1 tp (seconds) 3 1 10 TN0604 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 2.0 1.1 RDS(ON) (ohms) BVDSS (normalized) VGS = 5V 1.0 VGS = 10V 1.0 0.9 0 -50 0 50 100 150 5.0 0 10.0 Tj (°C) ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature 10 VDS = 25V 1.4 1.4 6 = TA -5 = °C 25 TA 4 5° = C 12 TA V(th) @ 1mA 1.2 1.2 R DS @ 10V, 1.5A 1.0 1.0 0.8 0.8 0.6 0.6 RDS(ON) (normalized) C 5° VGS(th) (normalized) ID (amperes) 8 2 0 0 2 4 6 8 10 -50 0 50 150 Tj (°C) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 200 10 f = 1MHz 8 C ISS VDS = 10V VGS (volts) 150 C (picofarads) 100 100 COSS 170 pF 170 pF 6 VDS = 40V 4 50 2 CRSS 0 0 0 10 20 30 0 40 1.0 2.0 3.0 4.0 5.0 QG (nanocoulombs) VDS (volts) 02/06/02 ©2002 Supertex Inc. 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