VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) -60V 0.9Ω -4A Order Number / Package TO-39 TO-92 VP2206N2 VP2206N3 MIL visual screening available Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Package Options Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) DGS Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* TO-39 Case: DRAIN SGD TO-92 -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP2206 Thermal Characteristics * Package ID (continuous)* ID (pulsed) TO-39 -0.75A -8.0A TO-92 -0.64A -4.0A Power Dissipation @ TC = 25°C θjc °C/W θja °C/W IDR* IDRM 6.0W 20.8 125 -0.75A -8.0A 1.0W 125 170 -0.64A -4.0A ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min Typ BVDSS Drain-to-Source Breakdown Voltage -60 VGS(th) Gate Threshold Voltage -1.0 ∆V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current Conditions VGS = 0V, ID = -10mA -3.5 V VGS = VDS, ID = -10mA -4.3 -5.5 mV/°C VGS = VDS, ID = -10mA -1 -100 nA VGS = ± 20V, VDS = 0V -50 µA VGS = 0V, VDS = Max Rating -10 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C -2 -4 -9 A VGS = -5V, VDS = -25V VGS = -10V, VDS =- 25V 1.3 1.5 0.75 0.9 0.85 1.2 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 325 450 COSS Common Source Output Capacitance 125 180 CRSS Reverse Transfer Capacitance 30 40 td(ON) Turn-ON Delay Time 4 15 tr Rise Time 16 25 td(OFF) Turn-OFF Delay Time 16 50 tf Fall Time 22 50 VSD Diode Forward Voltage Drop -1.1 -1.6 trr Reverse Recovery Time 500 0.8 Unit V -0.85 Static Drain-to-Source ON-State Resistance RDS(ON) Max Ω %/°C 1.4 VGS = -5V, ID = -1A VGS = -10V, ID = -3.5A VGS = -10V, ID = -3.5A Ω Symbol VDS = -25V, ID = -2A pF VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ns ID = -4A RGEN = 10Ω V VGS = 0V, ISD = -3.5A ns VGS = 0V, ISD = -1A Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 2 VP2206 Typical Performance Curves Output Characteristics Saturation Characteristics -10 -10 VGS = -10V VGS = -10V -8 -8V ID (amperes) ID (amperes) -8 -6 -4 -6V -8V -6 -4 -6V -2 -2 -4V -4V -3V -0 0 -10 -20 -30 -3V -0 -40 0 -50 -2 -4 -6 -8 -10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 2 10 VDS = -25V TA= -55°C TA = 125°C TA = 25°C PD (watts) GFS (siemens) 8 1 TO-39 6 4 2 TO-92 0 0 0 -5 0 -10 25 50 ID (amperes) -10 125 150 1.0 TO-39 (pulsed) Thermal Resistance (normalized) TO-92 (pulsed) TO-39 (DC) ID (amperes) 100 Thermal Response Characteristics Maximum Rated Safe Operating Area -1.0 TO-92 (DC) -0.1 75 TC (°C) 0.8 TO-39 P D = 6.0W 0.6 T C = 25°C 0.4 TO-92 P D = 1.0W T C = 25°C 0.2 T C = 25°C -0.01 -1 -10 -100 0 0.001 -1000 VDS (volts) 0.01 0.1 tp (seconds) 3 1 10 VP2206 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 5 1.1 VGS = -5V RDS(ON) (ohms) BVDSS (normalized) 4 1.0 3 2 VGS = -10V 1 0.9 0 0 50 100 150 0 -2 -4 -8 -10 V(th) and RDS Variation with Temperature Transfer Characteristics 2.0 1.2 -10 VDS = -25V RDS(ON) @ -10V, -3.5A -8 TA = -55°C VGS(th) (normalized) ID (amperes) -6 ID (amperes) Tj (°C) 25°C -6 -4 125°C 1.1 1.6 1.0 1.2 0.9 0.8 V(th)@ -1mA 0.4 0.8 -2 0 0.7 0 0 -2 -4 -6 -8 -10 RDS(ON) (normalized) -50 -50 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 400 f = 1MHz CISS VDS = -10V -8 VGS (volts) C (picofarads) 300 200 VDS = -40V -6 725 pF -4 COSS 100 -2 CRSS 310 pF 0 0 0 -10 -20 -30 -40 0 2 4 6 8 10 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. 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