VN2106 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► The Supertex VN2106 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Applications ► ► ► ► ► ► Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Option VN2106 TO-92 VN2106N3-G BVDSS/BVDGS RDS(ON) (V) (max) (Ω) 60 4.0 -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Pin Configuration Parameter Value Drain-to-Source voltage BVDSS Drain-to-Gate voltage BVDGS Gate-to-Source voltage ±20V Operating and storage temperature Soldering temperature* +300°C Distance of 1.6mm from case for 10 seconds. SOURCE GATE -55°C to +150°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * DRAIN TO-92 (N3) Product Marking SiVN 2 1 0 6 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 (N3) ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com VN2106 Thermal Characteristics ID ID Power Dissipation θjc Package (continuous)† (mA) (pulsed) (A) @TC = 25OC (W) ( C/W) TO-92 300 1.0 1.0 125 O ( C/W) IDR† (mA) IDRM 170 300 1.0 O θja (A) Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T = 25°C unless otherwise specified) A Sym Parameter Min Typ Max Units BVDSS VGS(th) Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 1.0mA Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID = 1.0mA Change in VGS(th) with temperature - -3.8 -5.5 O mV/ C VGS = VDS, ID = 1.0mA IGSS Gate body leakage current - 0.1 100 nA VGS = ±20V, VDS = 0V - - 1.0 IDSS Zero gate voltage drain current ID(ON) On-state drain current ΔVGS(th) RDS(ON) ΔRDS(ON) 100 0.6 - - - 4.5 6.0 - 3.0 4.0 - 0.7 1.0 %/OC VGS = 10V, ID = 500mA 150 400 - mmho VDS = 25V, ID = 500mA Static drain-to-source on-state resistance Change in RDS(ON) with temperature CISS Input capacitance - 35 50 COSS Common source output capacitance - 13 25 CRSS Reverse transfer capacitance - 4.0 5.0 td(ON) Turn-on delay time - 3.0 5.0 Rise time - 5.0 8.0 Turn-off delay time - 6.0 9.0 Fall time - 5.0 8.0 Diode forward voltage drop - 1.2 Reverse recovery time - 400 tf VSD trr VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC - Forward transconductance td(OFF) VGS = 0V, VDS = Max Rating - GFS tr µA Conditions A Ω VGS = 10V, VDS = 25V VGS = 5.0V, ID = 75mA VGS = 10V, ID = 500mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 600mA, RGEN = 25Ω 1.8 V VGS = 0V, ISD = 600mA - ns VGS = 0V, ISD = 600mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tF D.U.T. 10% 10% RL INPUT OUTPUT 0V 90% 90% ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 2 VN2106 Typical Performance Curves Output Characteristics Saturation Characteristics 2.0 2.0 VGS = 1.6 VGS = 10V 10V 1.6 1.2 8V 0.8 7V ID (amperes) ID (amperes) 9V 9V 1.2 8V 0.8 7V 6V 0.4 5V 4V 3V 0 0 20 30 40 VDS (volts) 6V 0 4V 3V 5V 0 50 2 4 6 8 10 VDS (volts) Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 0.5 2.0 VDS = 25V 0.4 TA = -55°C 0.3 PD (watts) GFS (siemens) 10 0.4 25°C 0.2 125°C TO-92 1.0 0.1 0 0 0 0.2 0.4 0.6 0.8 1.0 0 25 50 ID (amperes) ID (amperes) 1.0 TO-92 (pulsed) 0.1 0.1 150 1.0 TO-92 (DC) 0.01 125 100 Thermal Response Characteristics Maximum Rated Safe Operating Area Thermal Resistance (normalized) 10 75 TC (°C) T A = 25°C 1 10 VDS (volts) 100 0.8 0.6 0.4 TO-92 PD = 1W 0.2 TA = 25°C 0 0.001 0.01 0.1 1.0 10 tp (seconds) ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 3 VN2106 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.1 On-Resistance vs. Drain Current 10 VGS = 5V RDS(ON) (ohms) BVDSS (normalized) 8 1.0 VGS = 10V 6 4 2 0.9 0 -50 0 50 100 150 0 0.5 1.0 Transfer Characteristics 2.0 2.0 2.5 VGS(th) and RDS(ON) Variation with Temperature 2.0 1.6 VGS(th) (normalized) TA = -55°C 1.2 0.8 25°C 125°C RDS(ON) @ 10V, 0.5A 1.6 1.2 1.2 1.0 0.8 VGS(th) @ 1mA 0.8 0.4 0.4 0.6 0 0 0 2 4 6 8 -50 10 50 0 VGS (volts) 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage 50 100 Gate Drive Dynamic Characteristics 10 f = 1MHz VDS = 10V CISS VGS (volts) C (picofarads) 8 25 90 pF 6 4 COSS 2 0 0 10 VDS = 40V 30 pF CRSS 0 20 30 VDS (volts) 40 0 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 4 RDS(ON) (normalized) 1.4 VDS = 25V ID (amperes) 1.5 ID (amperes) Tj (°C) VN2106 3-Lead TO-92 Package Outline (N3) D A 1 Seating Plane 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b MIN .170 .014 NOM - - MAX .210 .022 c † .014 † D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* † .022 † JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. ©2008 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN2106 A122308 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 5