VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) 220V 1.25Ω 240V 1.25Ω Order Number / Package TO-92 20-Pin C-Dip 5.0A — VN2222NC 5.0A VN2224N3 — High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain Package Options Applications ❏ Motor controls ❏ Converters S 1 20 S ❏ Amplifiers S 2 19 S ❏ Switches S 3 18 NC ❏ Power supply circuits G1 4 17 D1 ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) G2 5 16 D2 G3 6 15 D3 G4 7 14 D4 S 8 13 NC S 9 12 S S 10 11 S Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* SGD TO-92 -55°C to +150°C top view 20-pin Ceramic DIP 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN2222/VN2224 Thermal Characteristics Package ID (continuous)* TO-92 ID (pulsed) 540mA Power Dissipation @ TC = 25°C θjc θja °C/W °C/W 1.0W 125 170 5.0A IDR* IDRM 540mA 5.0A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter BVDSS Min Drain-to-Source Breakdown Voltage VN2224 240 VN2222 220 VGS(th) Gate Threshold Voltage ∆V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) Typ 1.0 ON-State Drain Current Max VGS = 0V, ID = 5mA V VGS = VDS, ID = 5mA mV/°C VGS = VDS, ID = 5mA -4 -5 1 100 nA VGS = ±20V, VDS = 0V 50 µA VGS = 0V, VDS = Max Rating 5 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C 2 A 10 VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V Static Drain-to-Source ON-State Resistance 1.0 1.5 0.9 1.25 ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 1.4 GFS Forward Transconductance CISS Input Capacitance COSS 1.0 Conditions V 3.0 5 RDS(ON) Unit Ω VGS = 10V, ID = 2A %/°C VGS = 10V, ID = 2A VDS = 25V, ID = 2A 2.2 300 350 Common Source Output Capacitance 85 150 CRSS Reverse Transfer Capacitance 20 35 td(ON) Turn-ON Delay Time 6 15 tr Rise Time 16 25 td(OFF) Turn-OFF Delay Time 65 90 tf Fall Time 30 60 VSD Diode Forward Voltage Drop 0.8 1.0 trr Reverse Recovery Time 500 VGS = 5V, ID = 2A Ω Symbol pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 25V ID = 2A RGEN = 10Ω V VGS = 0V, ISD = 100mA ns VGS = 0V, ISD = 1A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 VN2222/VN2224 Typical Performance Curves Output Characteristics Saturation Characteristics 10 10 VGS = 10V 8V 6V 8 8 ID (amperes) ID (amperes) VGS = 10V 6 4V 4 2 6 4V 4 2 3V 3V 0 8V 6V 0 0 10 20 30 40 0 50 2 4 6 8 10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 10 5 VDS = 25V TA = -55°C 3 PD (watts) GFS (siemens) 4 2 5 TA = 25°C 1 TA = 125°C TO-92 0 0 0 5 0 10 25 50 ID (amperes) 125 100 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 10 Thermal Resistance (normalized) 1.0 1 ID (amperes) 75 TC (°C) 0.1 TO-92 (DC) 0.01 0.8 0.6 0.4 TO-92 TC = 25°C 0.2 PD = 1W TC = 25°C 0.001 1 10 100 0 0.001 1000 VDS (volts) 0.01 0.1 tp (seconds) 3 1 10 VN2222/VN2224 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 5 1.1 V GS = 5V RDS(ON) (ohms) BVDSS (normalized) 4 1.0 3 2 VGS = 10V 1 0.9 0 -50 0 50 100 0 150 2 4 6 8 10 ID (amperes) Tj (°C) Transfer Characteristics V(th) and RDS Variation with Temperature 2.4 1.4 10 VDS = 25V VGS(th) (normalized) ID (amperes) 25°C 125°C 5 2.0 RDS @ 10V, 2A 1.0 1.6 0.8 1.2 0.6 0.8 0.4 0 0 2 4 6 8 10 RDS(ON) (normalized) Vth @ 5mA 1.2 TA = -55°C 0.4 -50 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 400 10 f = 1MHz VGS (volts) C (picofarads) 200 100 VDS = 10V 8 CISS 300 COSS VDS = 40V 6 733 pF 4 2 300 pF CRSS 0 0 0 10 20 30 40 0 2 4 6 8 10 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com