TD9944 Low Threshold Dual N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(ON) (min) Order Number/Package 240V 6.0Ω 2.0V 1.0A TD9944TG SO-8 Features Low Threshold DMOS Technology ❏ Dual N-channel devices These dual low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Low threshold — 2.0V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays Pin Configuration ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* -55°C to +150°C S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 G2 D2 SO-8 top view 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, TD9944 Electrical Characteristics (each device, @ 25°C unless otherwise specified) Symbol Parameter Min Drain-to-Source Breakdown Voltage 240 VGS(th) Gate Threshold Voltage 0.6 ∆VGS(th) Max Unit Conditions V VGS = 0V, ID = 2mA 2.0 V VGS = VDS, ID= 1mA Change in VGS(th) with Temperature -5.0 mV/°C VGS = VDS, ID= 1mA IGSS Gate Body Leakage 100 nA VGS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µA VGS = 0V, VDS = Max Rating 1.0 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.5 1.9 1.0 2.8 Static Drain-to-Source ON-State Resistance RDS(ON) A VGS = 10V, VDS = 25V 4.0 6.0 4.0 6.0 ∆RDS(ON) Change in RDS(ON) with Temperature 1.4 GFS Forward Transconductance CISS Input Capacitance 65 125 COSS Common Source Output Capacitance 35 70 CRSS Reverse Transfer Capacitance 10 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time 300 VGS = 4.5V, VDS = 25V 600 Ω VGS = 10V, ID = 0.5A %/°C VGS = 10V, ID = 0.5A VDS = 25V, ID = 0.5A m 300 VGS = 4.5V, ID = 250mA Ω BVDSS Typ pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 25V, ID = 1.0A, RGEN = 25Ω V VGS = 0V, ISD = 1.0A ns VGS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) VDD 10% td(OFF) tF D.U.T. INPUT 10% OUTPUT 0V 90% OUTPUT Rgen t(OFF) tr RL 90% 2 TD9944 Typical Performance Curves Output Characteristics Saturation Characteristics 4.0 2.5 3.2 2.0 VGS = 10V 8V 6V 8V 2.4 ID (amperes) ID (amperes) VGS = 10V 6V 1.6 4V 0.8 1.5 4V 1.0 3V 0.5 3V 2V 2V 0 0 10 20 30 40 0 0 50 2 4 VDS (volts) 6 8 10 VDS (volts) BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 1.1 V GS = 4.5V RDS(ON) (ohms) BVDSS (normalized) 8 1.0 VGS = 10V 6 4 2 0.9 0 -50 0 50 100 150 0 1 2 3 4 5 ID (amperes) Tj (° C) Transfer Characteristics V(th) and RDS Variation with Temperature 2.4 3.0 1.4 25°C 2.0 RDS(ON) @ 10V, 0.5A 150°C VGS(th) (normalized) ID (amperes) TA = -55°C 2.0 1.5 1.0 1.2 V(th) @ 1mA 1.6 1.0 1.2 0.8 0.8 0.5 0.6 0.4 0 0 2 4 6 8 -50 10 VGS (volts) 0 50 Tj (° C) 3 100 150 RDS(ON) (normalized) VDS = 25V 2.5 TD9944 Typical Performance Curves Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 200 f = 1MHz VDS = 10V 8 VGS (volts) C (picofarads) 150 100 6 VDS = 40V 150 pF 4 CISS 50 2 COSS CRSS 0 10 20 63pF 0 0 30 40 0 0.4 1.2 0.8 1.6 2.0 VDS (volts) QG (nanocoulombs) Transconductance vs. Drain Current Power Dissipation vs. AmbientTemperature 1.0 2.0 VDS = 25V TA = -55°C 0.8 0.6 PD (watts) GFS (siemens) TO-243AA TA = 25°C TA = 150°C 0.4 1.0 0.2 0 0 0 0.8 1.6 2.4 3.2 0 4.0 50 25 ID (amperes) 100 125 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 1.0 10 Thermal Resistance (normalized) TA = 25°C TO-243AA (pulsed) ID (amperes) 75 TC (° C) 1.0 0.1 TO-243AA (DC) 0.8 0.6 TO-243AA PD = 0.55W TC = 25° C 0.4 0.2 0 0.01 1 10 100 0.001 1000 VDS (volts) ©2001 Supertex Inc. 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