TELCOM TC96C555COA

1
TC96C55
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR
2
FEATURES
GENERAL DESCRIPTION
■
■
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The TC96C555 Power Oscillator is an easily programmed IC that can be used in simple switch-mode power
supplies, diode doublers and inverters, and similar circuits
where high-current pulses are needed in an economical
form.
The TC96C555 uses TelCom Semiconductors' new
Tough CMOS™ process. The output drive capability is
similar to the TC4423/4/5 MOSFET Drivers, which can
switch in 25nsec into a capacitive load of 1,800pF. The
TC96C555 will not latch up under any conditions within their
power and voltage ratings. They can accept, without damage, up to 1.5A of reverse current (of either polarity) being
forced back into the output. All terminals are also fully
protected against up to 4kV of electrostatic discharge. The
peak output is rated at 3A. Split outputs permits driving of an
external pair of MOSFETS, with controllable cross conduction between upper and lower devices.
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Controllable Duty Cycle
Wide Operating Range ............................. 5V to 18V
High Peak Output Current .................................. 3A
High Capacitive Load Drive
Capability .................................... 1800pF in 20nsec
Short Delay Time ............................. < 150nsec Typ
APPLICATIONS
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■
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Fixed Frequency Power Oscillator
Voltage Controlled Oscillator
Low Power Buck Regulator Supply
MOSFET Driver
Simple diode inverters and doublers
ORDERING INFORMATION
PIN CONFIGURATIONS (DIP and SOIC)
Package
TC96C555COA
TC96C555CPA
TC96C555EOA
TC96C555EPA
TC96C555MJA
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin CerDIP
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
VR2
1
VIN
2
VREF
3
VR1
4
GND
VR2
1
8
GND
7
OUT
VIN
2
7
OUT
6
OUT
VREF
3
6
OUT
5
VDD
VR1
4
5
VDD
8
TC96C555CPA
TC96C555EPA
TC96C555COA
TC96C555EOA
FUNCTIONAL BLOCK DIAGRAM
+4V
3
VREF
8
1V 2V 3V
4
3V
Q1
ISOURCE
7
VIN
2
7
OUTPUT A
2V
1V
Q3
VR2
5
6
VDD
VR1
4
Operating
Temp Range
Part No.
VREF
3
1
3V
Q2
6
OUTPUT B
ISINK
5
GND
8
TC96C555-7 10/21/96
TELCOM SEMICONDUCTOR, INC.
4-159
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
TC96C555
ABSOLUTE MAXIMUM RATINGS
SOIC RΘJ-A .................................................................... 155°C/W
SOIC RΘJ-C ....................................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
Supply Voltage ......................................................... +20V
Input Voltage, Pin 1 or 4 ................. VDD +0.3 to GND –0.3
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Package Thermal Resistance
CerDIP RΘJ-A ................................................................ 150°C/W
CerDIP RΘJ-C ................................................................... 50°C/W
PDIP RΘJ-A .................................................................... 125°C/W
PDIP RΘJ-C ....................................................................... 42°C/W
ELECTRICAL CHARACTERISTICS: unless otherwise specified TA = +25°C with 5V ≤ VDD ≤ 18V.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
(VREF - VR1) / RCHG Fig. 2
(VREF - VR2) / RDIS Fig. 2
5.0
5.0
—
—
150
150
µA
µA
VREF
Line Regulation of VREF
VDD = 15V, IREF = 10µA
VDD = 7V to 18V
3.8
—
4
0.6
4.2
1
V
%/V
Load Regulation of VREF
IREF = 0 to 1mA
—
0.1
0.2
%/mA
—
—
5
%
Programmable Current Range
Pin 4 Input Current for ISOURCE Control
Pin 1 Input Current for ISINK Control
Reference Section
VDRIFT
VREF Drift Over Lifetime
TCVREF
VREF Tempco
—
1100
2000
ppm/°C
VR1, VR2
Voltage at Pin 1 & 4
2.85
3.0
3.15
V
VREF - VR
Voltage Across RCHG and RDIS
0.85
1
1.15
V
Vih
Pin 2, High Switching Threshold
VDD = 15V
1.8
2
2.2
V
Vil
Vih - Vil
IREF
Pin 2, Low Switching Threshold
Delta High to Low Threshold
VREF Pin 3 Short to GND Pin 5
VDD = 15V
VDD = 15V
VDD = 15V
0.8
0.9
—
1
1.0
8
1.2
1.1
15
V
V
mA
– 55 ≤ Temp ≤ 125°C
ELECTRICAL CHARACTERISTICS: unless otherwise specified TA = +25°C with 10V ≤ VDD ≤ 18V:
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
Voltage Stability
Temperature Stability
VDD = 7 to 18V
– 55 ≤ Temp ≤ 125°C
–
–
1
0.4
5
–
%/V
%/°C
Power Supply Current
IDD0 ≤ VIN ≤ 3V
–
2
3
mA
tR
Rise Time
C1 = 1800pF
–
23
30
nsec
tF
Fall Time
C1 = 1800pF
–
20
30
nsec
tD1
Delay Time
C1 = 1800pF
–
140
180
nsec
tD2
Delay Time
C1 = 1800pF
–
100
140
nsec
VDD – 0.025
–
–
V
Oscillator
Power Supply
Switching Time1
Output
VOH
High Output Voltage
VOL
Low Output Voltage
RO
RO
IPK
Output Res Hi State
Output Res Lo State
Peak Output Current
4-160
–
–
0.025
V
VDD = 15V
VDD = 15V
–
–
VDD = 18V
–
3.5
2.5
3
5
5
–
Ω
Ω
A
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
1
TC96C555
ELECTRICAL CHARACTERISTICS: specifications over operating temperature range unless otherwise
specified 5.0V < VDD <18V.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
(VREF-VR1) / RCHG Fig. 2
(VREF-VR2) / RDIS Fig. 2
5.0
5.0
–
–
100
100
µA
µA
IREF = 10µA
3.6
–
–
–
–
2.7
0.8
1.75
0.75
0.9
–
4
0.9
0.1
–
1100
3
1
2
1
1.0
–
4.4
1.5
0.4
5
2000
3.3
1.2
2.25
1.25
1.1
18
V
%/V
%/mA
%
ppm/°C
V
V
V
V
V
mA
2
Programmable Current Range
Pin 4 Input Current for ISOURCE Control
Pin 1 Input Current for ISINK Control
Reference Section
VREF
VDD = 7 to 18V
IREF = 0 to 1mA
VDRIFT
TCVREF
VR1, VR2
VREF-VR
Vih
Vil
Vih to Vil
IREF
VDD = 15V
Line Regulation of VREF
Load Regulation of VREF
VREF Drift Over Lifetime
VREF Tempco
Voltage Pin at 1 and 4
Voltage Across RCHG and RDIS
Pin 2, High Switching Threshold
Pin 2, Low Switching Threshold
Delta High to Low Threshold
VREF Pin 3 Short to GND Pin 5
– 55 ≤ Temp ≤ 125°C
VDD = 15V
VDD = 15V
VDD = 15V
VDD = 15V
VDD = 15V
3
4
Oscillator
Voltage Stability
VDD = 7V to 18V
–
1
8
%/V
Temperature Stability
– 55 ≤ Temp ≤ 125°C
–
0.4
–
%/°C
Power Supply Current
0 ≤ VIN ≤ 3V
–
–
4
mA
tR
Rise Time
C1 = 180pF, Fig. 1
–
33
40
nsec
tF
Fall Time
C1 = 1800pF, Fig. 1
–
30
40
nsec
tD1
Delay Time
Fg. 1
–
180
220
nsec
tD2
Delay Time
Fig. 1
–
160
200
nsec
Power Supply
IDD
Switching
Time1
Output
VOH
High Output Voltage
VDD – 0.025
–
–
V
VOL
Low Output Voltage
–
–
0.025
V
RO
Output Res Hi State
–
4.5
6
Ω
RO
IPK
Output Res Lo State
Peak Output Current
–
–
3.4
2
6
–
Ω
A
NOTE :
VDD = 15V
VDD = 15V
VDD = 18V
5
6
1Switching
times guaranteed by design.
The typical values are from 125°C measurements.
Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those
listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the Operational Specifications is not implied. Any exposure to Absolute Maximum Rating
Conditions may affect device reliability.
7
8
TELCOM SEMICONDUCTOR, INC.
4-161
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
TC96C555
TYPICAL CHARACTERISTICS
Fall Time vs. Capacitive Load
VDD = 5V, 10V, 18V
500
500
Rise Time (nsec)
Fall Time (nsec)
Freq = 55KHz
Temp = 25°C
Freq = 55KHz
Temp = 25°C
400
5V
300
200
10V
400
5V
300
10V
200
100
100
18V
18V
0
100
0
100
10,000 20,000
1000
CLOAD (pF)
Rise Time vs. Temperature
VDD = 5V, 10V, 15V
60
Fall Time (nsec)
5V
30
Fall Time vs. Temperature
VDD = 5V, 10V, 15V
VIN = 0 – 5V
CLOAD = 1000pF
50
40
10,000 20,000
1000
CLOAD (pF)
60
VIN = 0 – 5V
CLOAD = 1000pF
50
Rise Tme (nsec)
Rise TIme vs. Capacitive Load
VDD = 5V, 10V, 18V
40
30
5V
10V
10V
20
20
15V
15V
10
–55 –35 –15
5
25
45
65
85
10
–55 –35 –15
105 125
5
25
45
65
85
105 125
Temperature (°C)
Temperature (°C)
Delay Time vs. Supply Voltage
Temp = –55°C
Delay Time vs. Supply Voltage
Temp = 25°C
140
350
120
Delay Time (nsec)
Delay Time (nsec)
TD1
TD2
100
80
60
40
250
200
TD1
150
TD2
100
VIN = 0 – 5V
CLOAD = 1000pF
20
VIN = 0 – 5V
CLOAD = 1000pF
50
0
0
4
6
8
10
12
Supply Voltage
4-162
300
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
1
TC96C555
TYPICAL CHARACTERISTICS (Cont.)
Delay Time vs. Supply Voltage
Temp = 125°C
250
TD1
200
Delay Time (nsec)
Delay Time (nsec)
250
TD2
150
100
50
4
6
8
200
150
TD1
100
10
12
14
16
3
TD2
50
VIN = 0 – 5V
CLOAD = 1000pF
0
VIN = 0 – 5V
CLOAD = 1000pF
0
–55 –35 –15
18
125°C
Frequency (kHz)
25°C
11.3
11.1 -55°C
10.9
RDIS = 22K
RCHG = 44K
C = 1000pF
6
8
11.5
85
105 125
4
15V
18V
11.3
10
12
14
16
10.9
VDIS = 22K
RCHG = 44K
C = 1000pF
–55 –35 –15
18
5
10V
11.1
10.7
5
25
45
65
85
105 125
6
Supply Voltage
Temperature (°C)
IDD vs. Supply Voltage
Temp = – 55°C, 25°C, 125°C
IDD vs. Supply Voltage
Temp = – 55°C, 25°C, 125°C
3000
3000
2500
2500
2000
2000
IDD (µA)
IDD (µA)
65
11.7
11.7
4
45
11.9
11.9
10.7
25
Oscillation Frequency vs. Temperature
VS = 5V, 10V, 18V
Oscillation Frequency vs. Supply Voltage
Temp at 25°C, – 55°C, 125°C
11.5
5
Temperature (°C)
Supply Voltage
Frequency (kHz)
2
Delay Time vs. Temperature
VDD = 18V
–55°C
1500
25°C
1000
500
25°C
1000
125°C
7
–55°C
1500
125°C
500
VIN = 0V
VIN = 3V
0
0
4
6
8
10
12
14
Supply Voltage
TELCOM SEMICONDUCTOR, INC.
16
18
4
6
8
10
12
14
16
8
18
Supply Voltage
4-163
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
TC96C555
TYPICAL CHARACTERISTICS (Cont.)
IDD vs. Temperature
VDD = 5V, 10V, 15V
IDD vs. Temperature
VDD = 5V, 10V, 15V
2500
2000
15V
15V
2000
10V
1500
IDD (µA)
IDD (µA)
10V
1500
5V
1000
5V
1000
500
500
VIN = 3V
0
–55 –35 –15
5
25
45
65
85
VIN = 0V
0
–55 –35 –15
105 125
25
45
65
85
Temperature (°C)
VREF vs. Supply Voltage
Temp at 25°C, – 55°C, 125°C
VREF vs. Temperature
VDD = 5V, 10V, 18V
4.2
4.1
4.1
105 125
10V
-55°C
4.0
5V
4.0
18V
25°C
VREF
VREF
5
Temperature (°C)
3.9
125°C
3.8
3.9
3.8
3.7
4
6
8
10
12
14
16
3.7
–55 –35 –15
18
Supply Voltage
ROUT vs. Supply Voltage
Output HIGH
25
45
65
85
105 125
ROUT vs. Supply Voltage
Output LOW
10
7
6
8
125°C
6
125°C
5
ROUT (Ω)
ROUT (Ω)
5
Temperature (°C)
25°C
4
–55°C
4
25°C
3
2
–55°C
2
1
VIN = 0V
0
0
4
6
8
10
12
Supply Voltage
4-164
VIN = 3V
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
1
TC96C555
TYPICAL CHARACTERISTICS (Cont.)
ROUT vs. Temperature
Output HIGH
2
ROUT vs. Temperature
Output LOW
7
10
6
8
ROUT (Ohm)
ROUT (Ohm)
5
6
5V
4
10V
2 18V
4
5V
3
2
3
10V
1 18V
VIN = 0V
0
–55 –35 –15
5
25
45
65
85
VIN = 3V
0
–55 –35 –15
105 125
Temperature (°C)
5
25
45
65
85
105 125
Temperature (°C)
APPLICATIONS
The oscillator timing can easily be controlled by two
external resistors, RCHG and RDIS, and capacitor C. RCHG
and RDIS set the two constant current sources for charging
and discharging C. The source current is always flowing
when in operation. When the capacitor has charged to a 2V
threshold, the current sink circuit is enabled to discharge the
capacitor to the 1V threshold. When 1V is reached, the
current sink turns OFF to start another cycle.
Resistor RCHG is connected from VREF at Pin 3 to VR1 Pin
4 to program the charging current. Current is set with resistor
RDIS connected from VREF Pin 3 to VR2 Pin 1. Both currents
can range from 5µA to 150µA.
4
VDD = 18V
+5V
TEST CIRCUIT
1µF
WIMA
MKS-2
8
3
0.1µF
CERAMIC
90%
10%
0V
tD1
VREF
4
5
INPUT
18V
TC96C555
tF
90%
tD2
tR
90%
7
2
OUTPUT
OUTPUT
INPUT
6
0V
C1 = 1800pF
1
10%
10%
GND
100KHz Square Wave
tRISE = tFALL ≤ 10nsec
6
5
Figure 1. Output Switching Time
VDD
8
3
VREF
10µF
2V
VREF
4V
RCHG
4
VR1
1V 2V 3V
ISOURCE
VIN
1V
7
RDIS
2V
2
VIN
Q3
1
VR2
OUTPUT
VDD
1V
C
ISINK
6
Q2
5
OUTPUT
GND
Figure 2. Fixed Frequency Power Oscillator
TELCOM SEMICONDUCTOR, INC.
7
Q1
0V
TCHG
8
Figure 3. VIN and Output Waveform
4-165
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
TC96C555
APPLICATIONS (Cont.)
This circuit will convert a 6 to 15V input to a 5V output of
200 milliamps. Normal operating frequency is 50kHz. Peak
to peak ripple is 50 millivolts. A change from 100mA to
200mA produces a 50mV peak change in VOUT, with recovery in 200µs.
The TC96C555 is used here as a duty cycle modulator
in a buck output circuit. The source current is modulated to
control the duty cycle. Sink current is fixed at 100µA with a
resistor (R4) of 10K. Transistor Q1, (2N2907A), is used for
current modulation into TC96C555 Pin 4, the charge current
program input. Shunt regulator TL431 is used for voltage
sense and regulation feedback. The TL431 has an internal
reference of 2.495V. Terminal R is compared with this
reference to control conduction of cathode C to anode A. R2
and R3 are selected to give proper bias current to the TL431.
C2 and R7 are for loop compensation and are optimized for
a recovery time of 200µs. The TC96C555 outputs, Pin 7 and
6, are tied together so that when output is HIGH, current
conducts from VDD Pin 8 to output Pin 7 to charge the
inductor, L1. When output is OFF or LOW, energy stored in
L1 will continue to conduct through TC96C555 Pin 6 to the
lower internal MOSFET and out to Pin 5, the ground return.
This circuit does not have current limiting. A fuse is recommended for protection. Figure 6 shows the duty cycle as a
function of the source current. Figure 8 shows the frequency
vs control voltage.
Maximum Frequency
RCHG = 13K, Rdis = 6.8K
900
Frequency in KHz
700
500
400
300
200
100
10
20
30
40
C in pF
50 60 80 100
Minimum Frequency
RCHG = 200K, Rdis = 100K
100K
Frequency in Hz
10K
1K
100
10
1
0.1
10pF 100pF .001µF .01µF
C in pF
.1µF
1µF
Figure 4. Typical Maximum and Minimum
Operating Frequency vs. Capacitor
+12V
R1
10K
C4
.1µF
R2
560Ω
C5
100µF
Q1
2N2907A
8
4
3
R4
10K
C6
4.7µF
C1
470pF
1
VR1
VDD
VREF
OUT
7
OUT
6
VR2
VOUT
L1, 3mH
C3
100µF
TC96C555
2
VIN
10K
R5
GND
5
C2
.1µF
R3, 390Ω
100K
R7
C
A
TL431
R
10K
R6
Figure 5. +5V Buck Regulator Power Supply with 82% Efficiency at 200mA Output
4-166
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
1
TC96C555
By connecting both resistors, RCHG and RDIS, to a
voltage source instead of connecting to the 4V reference of
Pin 3, one can increase or decrease the output frequency.
Increasing the voltage source to 5V will double the oscillator
frequency by doubling the voltage across both RCHG and
RDIS. Decreasing the voltage source to 3.5V will drop the
frequency in half.
APPLICATIONS (Cont.)
Duty Cycle vs. Charge Current
Frequency in kHz
100
16
38
50
38
16
2
Duty Cycle in %
80
3
Voltage Controlled Oscillator
RCHG = 51k, Rdis = 25.5k
60
1000K
40
10pF
20
0
10
20
30 40 50 60 70
Charge Current in µA
ISINK = 100µA
80
90 100
Figure 6. Duty Cycle vs. Charge Current
Frequency in Hz
100K
100pF
10K
1000pF
1K
0.01µF
100
0.1µF
4
10
+12V
3.25V
3.5V
4V
Control Voltage
5V
7V
5
Figure 8. Frequency vs Control
.1µF
8
CONTROL
VOLTAGE
SOURCE
3
RCHG
4
2
RDIS
1
C
VREF
VDD
OUT
OUT
VR1
VIN
VR2
7
6
OUTPUT
6
TC96C555
GND
7
Figure 7. Voltage Controlled Power Oscillator
8
TELCOM SEMICONDUCTOR, INC.
4-167