TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION ■ ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in turn, are improved versions of the earlier TC426/427/428 series. All three families are pin-compatible. The TC4423/ 4424/4425 drivers are capable of giving reliable service in far more demanding electrical environments than their antecedents. Although primarily intended for driving power MOSFETs, the TC4423/4424/4425 drivers are equally well-suited to driving any other load (capacitive, resistive, or inductive) which requires a low impedance driver capable of high peak currents and fast switching times. For example, heavily loaded clock lines, coaxial cables, or piezoelectric transducers can all be driven from the TC4423/4424/4425. The only known limitation on loading is the total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. ■ ■ ■ ■ ■ ■ ■ ■ High Peak Output Current .................................. 3A Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive Capability ......................... 1800 pF in 25nsec Short Delay Times ............................. < 40nsec Typ Matched Rise/Fall Times Low Supply Current — With Logic "1" Input ................................ 3.5 mA — With Logic "0" Input ................................ 350 µA Low Output Impedance ............................. 3.5Ω Typ Latch-Up Protected . Will Withstand 1.5A Reverse Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected .................................................... 4 kV Pinouts Same as TC1426/27/28; TC4426/27/28 1 3 4 ORDERING INFORMATION Part No. TC4423COE TC4423CPA TC4423EOE TC4423EPA TC4423MJA TC4424COE TC4424CPA TC4424EOE Temperature Range Package 16-Pin SOIC (Wide) 0°C to +70°C 8-Pin Plastic DIP 0°C to +70°C 16-Pin SOIC (Wide) – 40°C to +85°C 8-Pin Plastic DIP – 40°C to +85°C 8-Pin CerDIP – 55°C to +125°C 16-Pin SOIC (Wide) 8-Pin Plastic DIP 16-Pin SO Wide 0°C to +70°C 0°C to +70°C – 40°C to +85°C Temperature Range Part No Package TC4424EPA TC4424MJA 8-Pin Plastic DIP 8-Pin CerDIP – 40°C to +85°C – 55°C to +125°C TC4425COE TC4425CPA TC4425EOE 16-Pin SO Wide 8-Pin Plastic DIP 16-Pin SO Wide 0°C to +70°C 0°C to +70°C – 40°C to +85°C TC4425EPA 8-Pin Plastic DIP TC4425MJA 8-Pin CerDIP – 40°C to +85°C – 55°C to +125°C FUNCTIONAL BLOCK DIAGRAM INVERTING 5 6 VDD 300 mV OUTPUT 7 NONINVERTING INPUT 4.7V TC4423 DUAL INVERTING TC4424 DUAL NONINVERTING TC4425 ONE INV., ONE NONINV. GND EFFECTIVE INPUT C = 20 pF (EACH INPUT) NOTES: 1. TC4425 has one inverting and one noninverting driver. 2. Ground any unused driver input. 8 TC4423/4/5-6 10/21/96 TELCOM SEMICONDUCTOR, INC. 4-237 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423 TC4424 TC4425 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B ...... VDD + 0.3V to GND – 5.0V Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 55°C/W PDIP RθJ-A ................................................... 125°C/W PIN CONFIGURATIONS 16-Pin SO Wide PDIP RθJ-C ..................................................... 45°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 75°C/W Operating Temperature Range C Version ............................................... 0°C to +70°C I Version ............................................ - 25°C to +85°C E Version ........................................... - 40°C to +85°C M Version ........................................ - 55°C to +125°C Package Power Dissipation (TA ≤ 70°C) Plastic DIP ...................................................... 730mW CerDIP ............................................................800mW SOIC ............................................................... 470mW 4423 4424 4425 NC NC NC 1 16 NC IN A 2 15 OUT A OUT A OUT A 8-Pin DIP NC 3 14 OUT A OUT A OUT A GND 4 13 VDD VDD VDD IN A 2 GND 5 12 VDD VDD VDD GND 3 NC 6 11 OUT B OUT B OUT B IN B 7 10 OUT B OUT B OUT B NC 8 9 NC TC4423 TC4424 TC4425 NC NC 1 IN B 4 4423 8 NC 4424 4425 NC NC 7 OUT A OUT A OUT A TC4423 TC4424 TC4425 6 VDD VDD VDD 5 OUT B OUT B OUT B NC NC = NO CONNECTION NOTE: Duplicate pins must both be connected for proper operation. ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit 2.4 — –1 — — — — 0.8 1 V V µA VDD – 0.025 — — — — 1.5 — — 2.8 3.5 3 — — 0.025 5 5 — — V V Ω Ω A A — — — — 23 25 33 38 35 35 75 75 Input VOH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current 0V ≤ VIN ≤ VDD Output VOH VOL RO RO IPK IREV High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Duty Cycle ≤ 2% t ≤ 300 µsec Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF nsec nsec nsec nsec Power Supply IS 4-238 Power Supply Current VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — 1.5 0.15 2.5 0.25 mA mA TELCOM SEMICONDUCTOR, INC. 3A DUAL HIGH-SPEED POWER --MOSFET DRIVERS TC4423 TC4424 TC4425 1 ELECTRICAL CHARACTERISTICS (Cont.): Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit 2.4 — – 10 — — — — 0.8 10 V V µA VDD – 0.025 — — — — 1.5 — — 3.7 4.3 3 — — 0.025 8 8 — — V V Ω Ω A A 2 Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current 0V ≤ VIN ≤ VDD Output VOH VOL RO RO IPK IREV High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Duty Cycle ≤ 2% t ≤ 300 µsec Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF — — — — 28 32 32 38 60 60 100 100 nsec nsec nsec nsec Power Supply Current VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — 2 0.2 3.5 0.3 mA 3 4 Power Supply IS NOTE: 1. Switching times guaranteed by design. VDD = 16V Test Circuit INPUT VDD = 16V Test Circuit 1 µF WIMA MKS-2 1 µF WIMA MKS-2 0.1 µF CERAMIC 1 INPUT OUTPUT INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 nsec TC4423 (1/2 TC4425) 16V 2 TC4424 (1/2 TC4425) +5V 90% INPUT 0V 6 OUTPUT CL = 1800pF INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 nsec +5V 0.1 µF CERAMIC 1 CL = 1800pF 2 90% 7 INPUT 10% tD1 tF tD2 0V tD1 90% 90% 10% 16V tR 5 90% 90% tR OUTPUT tD2 tF OUTPUT 0V 10% 10% Figure 1. Inverting Driver Switching Time TELCOM SEMICONDUCTOR, INC. 0V 10% 10% 8 Figure 2. Noninverting Driver Switching Time 4-239 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423 TC4424 TC4425 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage 100 100 4700 pF 4700 pF 80 tFALL (nsec) tRISE (nsec) 80 3300 pF 60 2200 pF 40 1500 pF 1000 pF 20 470 pF 3300 pF 60 2200 pF 40 470 pF 0 0 4 6 8 10 12 VDD 14 16 18 4 6 5V 10V 15V 40 0 100 1000 C LOAD (pF) 5V 60 10V 15V 40 0 100 10,000 1000 CLOAD (pF) 10,000 Propagation Delay vs. Input Amplitude Rise and Fall Times vs. Temperature 32 100 C LOAD = 2200 pF t RISE 22 t FALL DELAY TIME (nsec) t RISE 26 18 –55 –35 –15 C LOAD = 2200 pF t FALL 28 TIME (nsec) 18 20 20 V DD = 10V t D1 80 60 40 t D2 20 5 25 45 TA (°C) 4-240 16 80 tFALL (nsec) tRISE (nsec) 60 20 14 10 12 VDD 100 80 24 8 Fall TIme vs. Capacitive Load Rise TIme vs. Capacitive Load 100 30 1500 pF 1000 pF 20 65 85 105 125 0 1 2 3 4 5 6 7 INPUT (V) 8 9 10 11 12 TELCOM SEMICONDUCTOR, INC. 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423 TC4424 TC4425 1 TYPICAL CHARACTERISTICS (Cont.) Propagation Delay Time vs. Supply Voltage C LOAD = 2200 pF C LOAD = 2200 pF 45 45 40 35 tD2 30 tD2 tD2 DELAY TIME (nsec) DELAY TIME (nsec) 2 Delay Time vs. Temperature 50 50 40 35 3 tD2 30 25 25 20 –55 –35 –15 20 4 6 8 10 12 14 16 18 5 VDD Quiescent Current vs. Supply Voltage 25 45 TA (°C) 65 85 105 125 4 Quiescent Current vs. Temperature 1.4 TA = +25°C IQUIESCENT (mA) IQUIESCENT (mA) 1.2 BOTH INPUTS = 1 1 BOTH INPUTS = 0 0.1 1.0 0.8 0.6 0.4 0.2 0.01 4 6 8 10 12 14 16 18 INPUTS = 0 0.0 –55 –35 –15 5 VDD Output Resistance (Output High) vs. Supply Voltage 25 45 TA (°C) 65 85 105 125 6 Output Resistance (Output Low) vs. Supply Voltage 14 14 12 12 WORST CASE @ TJ = +150°C WORST CASE @ TJ = +150°C 10 RDS(ON) (Ω) RDS(ON) (Ω) 5 INPUTS = 1 8 6 TYP @ TA = +25°C 4 10 7 8 6 TYP @ TA = +25°C 4 2 2 4 6 8 10 12 14 VDD TELCOM SEMICONDUCTOR, INC. 16 18 4 6 8 10 12 VDD 14 16 8 18 4-241 3A DUAL HIGH-SPEED MOSFET DRIVERS TC4423 TC4424 TC4425 SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only) Supply Current vs. Capacitive Load Supply Current vs. Frequency 60 60 VDD = 18V 3300 pF VDD = 18V 50 50 1000 pF 40 ISUPPLY (mA) ISUPPLY (mA) 634 kHz 30 355 kHz 20 200 kHz 40 30 10,000 pF 20 100 pF 63.4 kHz 10 112.5 kHz 35.5 kHz 10 20 kHz 0 100 1000 0 10,000 10 100 FREQUENCY (kHz) CLOAD (pF) Supply Current vs. Frequency Supply Current vs. Capacitive Load 90 90 VDD = 12V 80 2 MHz 50 1.125 MHz 40 20 200 kHz 634 kHz 355 kHz 0 100 60 50 40 30 10 0 CLOAD (pF) 100 FREQUENCY (kHz) Supply Current vs. Capacitive Load Supply Current vs. Frequency 1000 10,000 120 10 80 1.125 MHz 60 3.55 MHz 634 kHz 40 2 MHz 355 kHz 20 112.5 kHz 20 kHz 1000 CLOAD (pF) 10,000 ISUPPLY (mA) 100 0 100 4700 pF V DD = 6V 100 ISUPPLY (mA) 1000 120 VDD = 6V 4-242 100 pF 10,000 pF 20 112.5 kHz 63.4 kHz 20 kHz 10 3300 pF 1000 pF 70 60 30 V DD = 12V 80 ISUPPLY (mA) ISUPPLY (mA) 70 1000 10,000 pF 80 2200 pF 60 1000 pF 40 100 pF 20 0 10 100 FREQUENCY (kHz) 1000 TELCOM SEMICONDUCTOR, INC. 3A DUAL HIGH-SPEED MOSFET DRIVERS TC4423 TC4424 TC4425 Thermal Derating Curves TC4423 Crossover Energy 8 Pin DIP 1200 MAX. POWER (mW) 4 2 A • sec 2 1400 10–8 8 6 10–9 8 6 4 16 Pin SOIC 1000 800 8 Pin CerDIP 600 3 400 2 10–10 1 200 0 2 4 6 8 10 12 14 16 18 VIN NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. 0 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE (°C) 4 *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings (See page 2) may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. 5 6 7 8 TELCOM SEMICONDUCTOR, INC. 4-243