TELCOM TC4426CPA

TC4426
TC4427
TC4428
1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS
2
FEATURES
GENERAL DESCRIPTION
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■
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The TC4426/4427/4428 are improved versions of the
earlier TC426/427/428 family of buffer/drivers (with which
they are pin compatible). They will not latch up under any
conditions within their power and voltage ratings. They are
not subject to damage when up to 5V of noise spiking (of
either polarity) occurs on the ground pin. They can accept,
without damage or logic upset, up to 500mA of reverse
current (of either polarity) being forced back into their
outputs. All terminals are fully protected against up to 4kV of
electrostatic discharge.
As MOSFET drivers, the TC4426/4427/4428 can easily
switch 1000 pF gate capacitances in under 30nsec, and
provide low enough impedances in both the ON and OFF
states to ensure the MOSFET's intended state will not be
affected, even by large transients.
Other compatible drivers are the TC4426A/27A/28A.
These drivers have matched input to output leading edge
and falling edge delays, tD1 and tD2, for processing short
duration pulses in the 25 nanoseconds range. They are pin
compatible with the TC4426/27/28.
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High Peak Output Current ............................... 1.5A
Wide Operating Range .......................... 4.5V to 18V
High Capacitive Load
Drive Capability ........................ 1000 pF in 25 nsec
Short Delay Time ................................ <40nsec Typ
Consistent Delay Times With Changes in
Supply Voltage
Low Supply Current
— With Logic “1” Input .................................... 4mA
— With Logic “0” Input ................................. 400µA
Low Output Impedance ....................................... 7Ω
Latch-Up Protected: Will Withstand >0.5A
Reverse Current ................................. Down to – 5V
Input Will Withstand Negative Inputs
ESD Protected .....................................................4kV
Pinout Same as TC426/TC427/TC428
ORDERING INFORMATION
Temperature
Range
Part No.
Package
TC4426COA
TC4426CPA
TC4426EOA
TC4426EPA
TC4426MJA
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin CerDIP
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
TC4427COA
TC4427CPA
TC4427EOA
TC4427EPA
TC4427MJA
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin CerDIP
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
TC4428COA
TC4428CPA
TC4428EOA
TC4428EPA
TC4428MJA
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin CerDIP
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
1
3
4
5
FUNCTIONAL BLOCK DIAGRAM
VDD
INVERTING
OUTPUTS
300 mV
OUTPUT
NONINVERTING
OUTPUTS
6
INPUT
4.7V
TC4426/TC4427/TC4428
GND
EFFECTIVE INPUT
C = 12 pF
NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers.
2. TC4428 has one inverting and one noninverting driver.
3. Ground any unused driver input.
7
8
TC4426/7/8-8
TELCOM SEMICONDUCTOR, INC.
10/21/96
4-245
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
PIN CONFIGURATIONS
NC 1
8 NC
IN A 2
TC4426
GND 3
IN B 4
2,4
IN A 2
6 VDD
GND 3
5 OUT B
IN B 4
INVERTING
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
NC 1
7 OUT A
7,5
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
8 NC
TC4427
2,4
8 NC
NC 1
7 OUT A
IN A 2
6 VDD
GND 3
5 OUT B
IN B 4
7 OUT A
TC4428
6 VDD
5 OUT B
2
7
4
5
7,5
NONINVERTING
DIFFERENTIAL
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
0V ≤ VIN ≤ VDD
2.4
—
–1
—
—
—
—
0.8
1
V
V
µA
VDD – 0.025
—
—
—
> 0.5
—
—
7
1.5
—
—
0.025
10
—
—
V
V
Ω
A
A
Input
VIH
VIL
IIN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
Output
VOH
VOL
RO
IPK
IREV
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
VDD = 18V, IO = 10 mA
Duty Cycle ≤ 2%, t ≤ 30 µsec
Duty Cycle ≤ 2%
t ≤ 30 µsec
Switching Time (Note 1)
tR
tF
tD1
tD2
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
19
19
20
40
30
30
30
50
nsec
nsec
nsec
nsec
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
—
—
4.5
0.4
mA
mA
Power Supply
IS
NOTE: 1. Switching times are guaranteed by design.
4-246
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
1
ELECTRICAL CHARACTERISTICS (CONT.): Specifications measured over operating temperature
range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
0V ≤ VIN ≤ VDD
2.4
—
– 10
—
—
—
—
0.8
10
V
V
µA
VDD – 0.025
—
—
—
> 0.5
—
—
9
1.5
—
—
0.025
12
—
—
V
V
Ω
A
A
2
Input
VIH
VIL
IIN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
Output
VOH
VOL
RO
IPK
IREV
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
VDD = 18V, IO = 10 mA
Duty Cycle ≤ 2%, t ≤ 300µsec
Duty Cycle≤ 2%
t ≤ 300µsec
3
Switching Time (Note 1)
tR
tF
tD1
tD2
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
—
—
—
—
40
40
40
60
nsec
nsec
nsec
nsec
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
—
—
8
0.6
mA
4
Power Supply
IS
NOTE: 1. Switching times are guaranteed by design.
5
Crossover Energy Loss
–8
10
+5V
9
8
7
6
0V
10%
tD1
VDD= 18V
5
A • sec
90%
INPUT
4
4.7 µF
0.1 µF
VDD
tD2
tF
tR
90%
90%
OUTPUT
6
6
3
INPUT
5,7
2,4
Inverting Driver
CL = 1000 pF
2
10%
10%
0V
OUTPUT
+5V
90%
INPUT
–9
10
4
6
8
10
12
VDD
14
16
3
18
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10ns
Thermal Derating Curves
1600
8 Pin DIP
10%
tD1
90%
tR
OUTPUT
0V
1400
MAX. POWER (mW)
0V
VDD
10%
90%
tD2
tF
10%
Noninverting Driver
7
1200
8 Pin CerDIP
1000
800
8 Pin SOIC
Figure 1. Switching Time Test Circuit
600
400
200
0
0
10
20
30
40
50
60
70
80
90
100
110
120
NOTE: The values on this graph represent the loss seen by both drivers in a package
during one complete cycle. For a single driver, divide the stated values by 2. For a
single transition of a single driver, divide the stated value by 4.
AMBIENT TEMPERATURE (°C)
TELCOM SEMICONDUCTOR, INC.
4-247
8
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
Fall Time vs. Supply Voltage
100
100
2200 pF
TA = 25°C
80
1500 pF
tFALL (nsec)
tRISE (nsec)
80
2200 pF
TA = 25°C
60
1000 pF
40
1500 pF
60
1000 pF
40
470 pF
470 pF
20
20
100 pF
100 pF
0
0
4
6
8
10
14
12
16
18
4
6
8
10
VDD
5V
80
tFALL (nsec)
tRISE (nsec)
18
5V
TA = 25°C
80
10V
60
15V
40
60
10V
15V
40
20
20
0
100
1000
0
100
10,000
1000
CLOAD (pF)
CLOAD (pF)
Rise and Fall Times vs. Temperature
10,000
Propagation Delay vs. Supply Voltage
60
60
C LOAD = 1000 pF
50
40
30
tFALL
20
10
–55 –35 –15
CLOAD = 1000 pF
t D2
VDD = 17.5V
DELAY TIME (nsec)
TIME (nsec)
16
100
TA = 25°C
4-248
14
Fall TIme vs. Capacitive Load
Rise TIme vs. Capacitive Load
100
50
12
VDD
TA = 25°C
40
tD1
30
20
tRISE
10
5
25 45 65 85
TEMPERATURE (°C)
105 125
4
6
8
10
12
VDD
14
16
18
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
1
TYPICAL CHARACTERISTICS (Cont.)
Effect of Input Amplitude on Delay Time
60
VDD = 18V
VLOAD= 1000 pF
C LOAD = 1000 pF
VDD = 10V
50
DELAY TIME (nsec)
50
DELAY TIME (nsec)
2
Propagation Delay Time vs. Temperature
60
40
t D2
30
t D1
20
2
40
3
t D1
30
20
10
0
t D2
4
6
VDRIVE (V)
8
10
–55 –35 –15
10
Quiescent Supply Current vs. Voltage
5
25 45
TA (°C)
65
85
105 125
4
Quiescent Supply Current vs. Temperature
4.0
V DD = 18V
IQUIESCENT (mA)
IQUIESCENT (mA)
TA = +25°C
BOTH INPUTS = 1
1
3.5
3.0
5
BOTH INPUTS = 1
2.5
BOTH INPUTS = 0
0.1
4
6
8
10
12
VDD
14
16
2.0
–55 –35 –15
18
High-State Output Resistance
25 45
TA (°C)
65
85
6
105 125
Low-State Output Resistance
25
25
20
20
WORST CASE @ TJ = +150°C
RDS(ON) (Ω)
RDS(ON) (Ω)
5
15
TYP @ TA = +25°C
10
WORST CASE @ TJ = +150°C
TYP @ TA = +25°C
10
8
7
15
8
5
8
5
4
6
8
10
12
14
VDD
TELCOM SEMICONDUCTOR, INC.
16
18
4
6
8
10
12
VDD
14
16
18
4-249
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
Supply Current vs. Frequency
Supply Current vs. Capacitive Load
60
60
VDD = 18V
2 MHz
VDD = 18V
50
1000 pF
2200 pF
50
ISUPPLY (mA)
ISUPPLY (mA)
900 kHz
40
600 kHz
30
20
200 kHz
10
40
100 pF
30
20
10
20 kHz
0
100
0
1000
CLOAD (pF)
10
10,000
Supply Current vs. Frequency
Supply Current vs. Capacitive Load
60
60
2 MHz
VDD = 12V
50
50
40
40
ISUPPLY (mA)
ISUPPLY (mA)
VDD = 12V
30
900 kHz
20
600 kHz
200 kHz
20 kHz
0
100
1000
CLOAD (pF)
30
20
100 pF
100
1000
FREQUENCY (kHz)
Supply Current vs. Frequency
Supply Current vs. Capacitive Load
60
VDD = 6V
VDD = 6V
50
50
ISUPPLY (mA)
ISUPPLY (mA)
1000 pF
0
10
10,000
60
40
30
2 MHz
20
900 kHz
600 kHz
200 kHz
20 kHz
10
4-250
2200 pF
10
10
0
100
100
1000
FREQUENCY (kHz)
1000
CLOAD (pF)
40
2200 pF
30
1000 pF
20
10
100 pF
0
10,000
10
100
1000
FREQUENCY (kHz)
TELCOM SEMICONDUCTOR, INC.