Transistors SMD Type P-Channel Enhancement Mode Vertical D-MOS Transistor KSP230 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 0.1max +0.05 0.90-0.05 +0.2 -0.2 Direct interface to C-MOS,TTL,etc High-speed switching +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 No secondary breakdown 4 1 1 gate 3 2 +0.1 0.70-0.1 2.9 4.6 2,4 drain 3 source Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage (DC) Gate-source voltage (DC) open drain Drain current (DC) Symbol Rating VDS -300 V 20 V VGSO ID -210 Unit mA Peak drain current IDM -0.75 A Total power dissipation * Ptot 1.5 W Storage temperature Tstg -65 to +150 Operating junction temperature thermal resistance from junction to ambient * Tj 150 Rth j-a 83.3 K/W *Device mounted on an epoxy printed-circuit board, 40 X 40 X 1.5 mm; mounting pad for drain lead minimum 6 cm2. www.kexin.com.cn 1 Transistors SMD Type KSP230 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min V(BR)DSS ID= -10 ìA, VGS = 0V -300 VGSth VDS = VGS, ID= -1 mA -1.7 Drain-source leakage current IDSS VDS = -240 V, VGS = 0V Gate leakage current IGSS VGS = Drain-source breakdown voltage Gate-source threshold voltage Drain-source on-state resistance Forward transfer admittance 100 yfs VDS = -25 V , ID = -170 mA Ciss Coss Reverse transfer capacitance Crss Turn-on time (See Fig.1and Fig.2) ton Turn-off time (See Fig.1and Fig.2) toff -2.55 -100 ID = -170 mA, VGS = -10 V Input capacitance Max Unit V 20V,VDS=0 RDS(on) Output capacitance Typ V A nA 17 100 mS 60 90 15 30 5 15 VGS = 0 V to -10 V,ID = -250 mA, VDD = -50 V, 5 10 VGS = -10V to 0 V,ID = -250 mA, VDD = -50 V, 15 30 VDS = -25 V, VGS = 0 V, f = 1 MHz pF ns Fig.1Switching time test circuit. 2 www.kexin.com.cn Fig.2 Input and output waveforms.