TELCOM TC4421CPA

1
TC4421
TC4422
9A HIGH-SPEED MOSFET DRIVERS
FEATURES
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Tough CMOS™ Construction
High Peak Output Current .................................. 9A
High Continuous Output Current ............... 2A Max
Fast Rise and Fall Times:
— 30 nsec with 4,700 pF Load
— 180 nsec with 47,000 pF Load
Short Internal Delays ............................ 30nsec Typ
Low Output Impedance ............................ 1.4W Typ
APPLICATIONS
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Line Drivers for Extra-Heavily-Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
PIN CONFIGURATIONS
5-Pin TO-220
8-Pin Plastic DIP/CerDIP
VDD
7 OUTPUT
TC4421
TC4422
NC 3
TC4421
TC4422
6 OUTPUT
GND 4
The TC4421/4422 are high current buffer/drivers
capable of driving large MOSFETs and IGBTs.
They are essentially immune to any form of upset
except direct overvoltage or over-dissipation — they cannot be latched under any conditions within their power and
voltage ratings; they are not subject to damage or improper
operation when up to 5V of ground bounce is present on
their ground terminals; they can accept, without either
damage or logic upset, more than 1A inductive current of
either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421/4422 inputs may be driven directly from
either TTL or CMOS (3V to 18V). In addition, 300 mV of
hysteresis is built into the input, providing noise immunity
and allowing the device to be driven from slowly rising or
falling waveforms.
3
4
ORDERING INFORMATION
8 VDD
1
INPUT 2
5 GND
Tab is
Common
to VDD
INPUT
GND
VDD
GND
OUTPUT
2
GENERAL DESCRIPTION
NOTE: Duplicate pins must both be connected
for proper operation.
NC = No connection
Part No.
Package
Temperature Range
TC4421CAT
TC4421CPA
TC4421EPA
TC4421MJA
5-Pin TO-220
8-Pin PDIP
8-Pin PDIP
8-Pin CerDIP
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 55°C to+125°C
TC4422CAT
TC4422CPA
TC4422EPA
TC4422MJA
5-Pin TO-220
8-Pin PDIP
8-Pin PDIP
8-Pin CerDIP
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 55°C to+125°C
5
6
FUNCTIONAL BLOCK DIAGRAM
INVERTING
V DD
300 mV
OUTPUT
7
NONINVERTING
INPUT
4.7V
TC4421/TC4422
Inverting/Noninverting
GND
EFFECTIVE
INPUT C
25 pF
8
TC4421/2-7 -1018/96
TELCOM SEMICONDUCTOR, INC.
4-231
9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
Operating Temperature (Ambient)
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Lead Temperature (10 sec) ..................................... 300°C
Supply Voltage ............................................................20V
Input Voltage .......................... (VDD + 0.3V) to (GND - 5V)
Input Current (VIN > VDD) ........................................ 50 mA
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation, TA ≤ 70°C
PDIP ..................................................................730W
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Power Dissipation, TA ≤ 70°C
5-Pin TO-220 (With Heat Sink) .........................1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedance (To Case)
5-Pin TO-220 RQJ-C ..................................................... 10°C/W
Storage Temperature ............................ – 65°C to +150°C
Operating Temperature (Chip) ................................ 150°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD ≤ 18V unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
0V ≤ VIN ≤ VDD
2.4
—
– 10
1.8
1.3
—
—
0.8
10
V
V
µA
VDD – 0.025
—
—
—
—
2
—
—
1.4
0.9
9
—
0.025
—
1.7
—
V
V
Ω
Ω
A
A
>1500
t ≤ 300 µsec
—
—
mA
Input
VIH
VIL
IIN
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
Output
VOH
VOL
RO
RO
IPK
IDC
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
IREV
Latch-Up Protection
See Figure 1
See Figure 1
VDD = 18V, IO = 10 mA
VDD = 18V, IO = 10 mA
VDD = 18V
10V ≤ VDD ≤ 18V, TC = 25°
(TC4421/22 CAT only)
Duty Cycle ≤ 2%
Withstand Reverse Current
Switching Time (Note 1)
tR
tF
tD1
tD2
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1, CL = 10,000 pF
Figure 1, CL = 10,000 pF
Figure 1
Figure 1
—
—
—
—
60
60
30
33
75
75
60
60
nsec
nsec
nsec
nsec
IS
Power Supply Current
VIN = 3V
VIN = 0V
VDD
Operating Input Voltage
—
—
4.5
0.2
55
—
1.5
150
18
mA
µA
V
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
2.4
—
– 10
—
—
—
—
0.8
10
V
V
µA
Power Supply
Input
VIH
VIL
IIN
4-232
0V ≤ VIN ≤ VDD
TELCOM SEMICONDUCTOR, INC.
9A HIGH-SPEED MOSFET DRIVERS
1
TC4421
TC4422
ELECTRICAL CHARACTERISTICS (cont.):
Measured over operating temperature range with 4.5V ≤ VS ≤ 18V unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
0V ≤ VIN ≤ VDD
2.4
—
– 10
—
—
—
—
0.8
10
V
V
µA
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
See Figure 1
See Figure 1
VDD = 18V, IO = 10 mA
VDD = 18V, IO = 10 mA
VDD – 0.025
—
—
—
—
—
2.4
1.8
—
0.025
3.6
2.7
V
V
W
W
2
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
RO
3
Switching Time (Note 1)
tR
tF
tD1
tD2
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1, CL = 10,000 pF
Figure 1, CL = 10,000 pF
Figure 1
Figure 1
—
—
—
—
60
60
50
65
120
120
80
80
nsec
nsec
nsec
nsec
IS
Power Supply Current
VIN = 3V
VIN = 0V
Operating Input Voltage
0.45
0.06
—
3
0.2
18
mA
VDD
—
—
4.5
4
Power Supply
V
5
NOTE: 1. Switching times guaranteed by design.
VDD = 18V
0.1 µF
1
+5V
8
6
90%
INPUT
0.1 µF
0.1 µF
0V
INPUT
2
6
OUTPUT
4
t D1
tF
t D2
tR
90%
90%
OUTPUT
7
C L = 10,000 pF
TC4421
+18V
10%
0V
10%
10%
7
5
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10nsec
8
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
4-233
9A HIGH SPEED MOSFET DRIVERS
TC4421
TC4422
TYPICAL CHARACTERISTICS
Fall Time vs. Supply Voltage
Rise Time vs. Supply Voltage
220
180
200
160
180
tRISE (nsec)
tFALL (nsec)
22,000 pF
160
140
120
10,000 pF
100
80
100
80
10,000 pF
4700 pF
40
40
1000 pF
20
20
0
22,000 pF
120
60
4700 pF
60
140
1000 pF
0
4
6
8
10
14
12
16
4
18
6
8
10
V
DD
12
VDD
14
300
300
5V
5V
250
250
tRISE (nsec)
150
15V
tFALL (nsec)
10V
10V
200
200
150
15V
100
100
50
50
0
100
1000
10,000
CLOAD (pF)
0
100
100,000
1000
10,000
CLOAD (pF)
100,000
Propagation Delay vs. Supply Voltage
Rise and Fall Times vs. Temperature
50
90
CLOAD = 10,000 pF
VDD = 15V
C LOAD = 1000 pF
45
70
TIME (nsec)
TIME (nsec)
18
Fall TIme vs. Capacitive Load
Rise TIme vs. Capacitive Load
80
16
60
t RISE
50
40
35
tD2
tD1
t FALL
40
30
30
–40
4-234
0
40
TA (°C)
80
120
25
4
6
8
10
12
VDD
14
16
18
TELCOM SEMICONDUCTOR, INC.
9A HIGH SPEED MOSFET DRIVERS
1
TC4421
TC4422
TYPICAL CHARACTERISTICS (Cont.)
Supply Current vs. Capacitive Load
(VDD = 18V)
220
180
200
160
47,000 pF
2 MHz
180
140
63.2 kHz
1.125 MHz
100
80
632 kHz
60
ISUPPLY (mA)
ISUPPLY (mA)
140
22,000 pF
10,000 pF
160
120
120
100
80
3
0.1 µF
60
40
40
20
20
0
0
1000
100
4700 pF
20 kHz
200 kHz
10,000
CLOAD (pF)
2
Supply Current vs. Frequency
(VDD = 18V)
470 pF
10
100,000
100
FREQUENCY (kHz)
1000
4
Supply Current vs. Frequency
(VDD = 12)
Supply Current vs. Capacitive Load,
(VDD = 12)
180
180
160
160
140
140
120
120
100
2 MHz
63.2 kHz
80
60
1.125 MHz
40
632 kHz
20
200 kHz
ISUPPLY (mA)
ISUPPLY (mA)
22,000 pF
10,000 pF
47,000 pF
5
100
80
60
20 kHz
20
470 pF
0
0
100
1000
10,000
CLOAD (pF)
100,000
10
Supply Current vs. Capacitive Load
(VDD = 6V)
6
1000
120
200 kHz
90
47,000 pF
100
80
22,000 pF
60
50
63.2 kHz
40
2 MHz
ISUPPLY (mA)
70
ISUPPLY (mA)
100
FREQUENCY (kHz)
Supply Current vs. Frequency
(VDD = 6V)
100
30
4700 pF
0.1 µF
40
80
60
40
632 kHz
0.1 µF
20
20 kHz
10
7
10,000 pF
4700 pF
20
470 pF
0
100
1000
10,000
CLOAD (pF)
TELCOM SEMICONDUCTOR, INC.
100,000
0
10
100
FREQUENCY (kHz)
8
1000
4-235
9A HIGH SPEED MOSFET DRIVERS
TC4421
TC4422
TYPICAL CHARACTERISTICS (Cont.)
Propagation Delay vs. Temperature
Propagation Delay vs. Input Amplitude
120
50
VDD = 10V
CLOAD = 10000V
110
100
45
90
TIME (nsec)
TIME (nsec)
80
70
60
tD2
50
40
35
tD1
tD2
30
40
tD1
30
25
20
10
20
–60 –40 –20
0
1
10
2
–6
3
4
5
6
INPUT (V)
7
8
9
10
0
20 40
TA (°C)
60
80
100 120
Quiescent Supply Current vs. Temperature
Crossover Energy vs. Supply Voltage
103
10
IQUIESCENT (µA)
A•sec
VDD= 18V
–7
INPUT = 1
102
INPUT = 0
10
–8
4
6
8
10
12
V
DD
14
16
18
–60 –40 –20
0
20
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
5.5
5.5
5
5
4.5
4.5
TJ = 150° C
RDS(ON) ( Ω)
RDS(ON) ( Ω)
6
3.5
3
2.5
2
4
3.5
3
1.5
1
1
0.5
0.5
4
6
TJ = 150°C
2.5
2
TJ = 25° C
8
10
12
VDD (V)
4-236
Low-State Output Resistance
vs. Supply Voltage
6
1.5
80 100 120
J
High-State Output Resistance
vs. Supply Voltage
4
40 60
T (°C)
14
16
18
TJ = 25°C
4
6
8
10
12
14
16
18
VDD (V)
TELCOM SEMICONDUCTOR, INC.