T R I Q U I N T S E M I TGA8349-SCC C O N D U C Gain Block Amplifier ● ● ● ● ● ● DC to 14 -GHz Frequency Range T O R , I N C . 8349 1.2:1 Input SWR, 1.3:1 Output SWR 11-dB Small Signal Gain 16-dBm Output Power at 1 -dB Gain Compression at Midband 3.1-dB Noise Figure at Midband 3,4290 x 2,2860 x 0,101 mm (0.135 x 0.090 x 0.004 in.) PHOTO ENLARGEMENT DESCRIPTION The TriQuint TGA8349 -SCC is a GaAs monolithic low -noise distributed amplifier designed for use as a multi -octave general-purpose gain block. Nine 122 -µm gate width FETs provide 11-dB nominal gain and 3.1- dB noise figure from DC to 14 -GHz. Typical power output is 16 -dBm at 1-dB gain compression. Typical input SWR is 1.2:1 and output SWR is 1.3:1. Gr ound is provided to the circuitry through vias to the backside metallization.The DC to 14 -GHz frequency range, dual -gate AGC control and gain-flatness characteristics make the TGA8349 -SCC suitable for many system applications including fiber optic. The TGA8349-SCC is supplied in chip for m and is engineer ed for high -volume automated assembly. All metal sur faces are gold plated to be compatible with ther mocompression and thermosonic wire-bonding processes. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com TGA8349-SCC 20 TYPICAL SMALL SIGNAL POWER GAIN VV++==88V V VVCTR 1.5VV L ==1.5 CTRL II ++ = 80 mA TTA ==25° C 25°C Small-Signal Gain (dB) 16 A 12 8 4 0 0 2 4 6 8 10 12 14 Frequency (GHz) 8 TYPICAL NOISE FIGURE + + VV =8 = V8 V VCTR 1.5 VV L= = 1.5 VCTRL + I I +==80 80mA mA T A = 25° C TA = 25°C 7 Noise Figure (dB) 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 Frequency (GHz) 20 TYPICAL OUTPUT POWER P1dB V +==88VV VCTR L= = 1.5 1.5VV CTRL 80 mA mA I ++ == 80 TTA == 25° C 25°C A Output Power (dBm) 16 12 8 4 0 0 2 4 6 8 10 12 14 Frequency (GHz) TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 2 TGA8349-SCC 0 TYPICAL RETURN LOSS + V V + == 88VV = 1.5 V VCTRL CTR L= 1.5 V I +I +==80 80mA mA C 25°C TAA == 25° Return Loss (dB) 10 20 30 40 Input Input Output Output 50 0 2 4 6 8 10 12 14 Frequency (GHz) ABSOLUTE MAXIMUM RATINGS Positive supply voltage, V + .................................................................................................................. 13 V Positive supply voltage range with respect to negative supply voltage, V+ - V – .............................. 0 V to 13 V Positive supply voltage range with r espect to gain control voltage, VCTRL - V + .............................. 0 V to - 13 V Negative supply voltage range, VG1 ............................................................................................ - 5 V to 0 V Gain control voltage range, VCTRL ................................................................................................ - 5 V to 4 V Positive supply current, I+ .............................................................................................................. 144 mA Power dissipation, PD, at (or below) 25°C base-plate temperatur e* ...................................................... 2.6 W Input continuous wave power, PIN .................................................................................................... 23 dBm Operating channel temperature, TCH** ......................................................... ..................................... 150°C Mounting temperature (30 sec), TM .................................................................................................. 320°C Storage temperature range, TSTG ............................................................................................ - 65 to 150°C Ratings over channel temperatur e range, TCH (unless otherwise noted) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond those indicated under “RF Characteristics” is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25°C base -plate temperature, derate linearly at the rate of 5.5 mW/5C. ** Operating channel temperature directly af fects the device MTTF. For maximum life, it is r ecommended that channel temperature be maintained at the lowest possible level. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 3 TGA8349-SCC TYPICAL S-PARAMETERS Frequency S11 S21 S12 S22 GAIN (GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(°) (dB) 0.1 0.02 115 3.32 173 0.001 85 0.12 180 10.4 0.5 0.02 92 3.34 155 0.003 73 0.12 161 10.5 1.0 0.02 26 3.36 130 0.005 53 0.11 142 10.5 1.5 2.0 0.03 0.02 -28 -72 3.40 3.46 106 80 0.008 0.011 31 6 0.09 0.05 112 80 10.6 10.8 2.5 0.02 -122 3.51 54 0.013 -20 0.02 21 10.9 3.0 0.01 -165 3.52 28 0.015 -46 0.03 -73 10.9 3.5 0.01 139 3.53 2 0.017 -71 0.05 -118 10.9 4.0 0.01 87 3.51 -24 0.019 -97 0.07 -151 10.9 4.5 5.0 0.01 0.02 12 -74 3.48 3.48 -50 -76 0.021 0.024 -121 -146 0.07 0.06 -180 155 10.8 10.8 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 0.03 0.04 0.06 0.05 0.05 0.04 0.02 0.03 0.05 0.07 0.08 0.09 0.09 0.08 0.08 0.07 0.09 0.13 0.16 0.15 0.10 -112 -142 -167 167 150 141 163 -166 -162 -167 177 167 156 149 148 160 174 168 151 131 126 3.48 3.49 3.52 3.51 3.51 3.51 3.52 3.54 3.58 3.63 3.63 3.68 3.68 3.68 3.67 3.65 3.63 3.57 3.46 3.36 3.31 -101 -127 -154 180 154 127 100 73 46 18 -11 -39 -69 -99 -129 -160 168 135 101 67 30 0.026 0.029 0.032 0.035 0.037 0.039 0.041 0.043 0.045 0.047 0.049 0.054 0.057 0.061 0.066 0.069 0.072 0.072 0.072 0.070 0.071 -170 166 144 120 95 71 46 21 -6 -34 -60 -89 -117 -144 -172 160 131 100 68 35 0 0.05 0.03 0.01 0.04 0.07 0.10 0.11 0.10 0.07 0.04 0.07 0.12 0.17 0.18 0.16 0.11 0.09 0.16 0.23 0.25 0.19 132 106 -123 -120 -139 -158 -177 165 155 179 -142 -142 -160 -179 163 156 -172 -156 -171 171 161 10.8 10.9 10.9 10.9 10.9 10.9 10.9 11.0 11.1 11.2 11.2 11.3 11.3 11.3 11.3 11.3 11.2 11.0 10.8 10.5 10.4 16.0 0.10 160 3.13 -10 0.069 -40 0.16 -171 9.9 V+ = 8 V, VCTRL = 1.5 V, I+ = 80 mA, TA = 25°C Reference planes for S -parameter data include bond wir es as specified in the “Recommended Assembly Diagram.” TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 4 TGA8349-SCC RF CHARACTERISTICS PARAMETER GP SWR(in) SWR(out) P 1dB NF TEST CONDITIONS Small–signal power gain Input standing wave ratio Output standing wave ratio Output power at 1–dB gain compression Noise figure f = DC to 14 GHz f = DC to 14 GHz f = DC to 14 GHz f = 7 GHz f = 7 GHz fo = 1 GHz fo = 3 GHz fo = 5 GHz fo = 1 GHz f o = 3 GHz fo = 5 GHz Output third harmonic at Pin = -2 dBm Output second harmonic at Pin = -2 dBm TYP UNIT 11 1.2:1 1.3:1 16 3.1 -51 -47 -48 -26 -27 -28 dB dBm dB dBc* dBc* V + = 8 V, VCTRL = 1.5 V, I+ = 80 mA TA = 25°C (unless other wise noted) * Unit dBc applies to decibels with r espect to the car rier or fundamental fr equency, f.o DC CHARACTERISTICS PARAMETER TEST CONDITIONS I DSS Total zero–gate–voltage drain current at saturation VDS = 0.5 V to 3.5 V, V GS = 0 V MIN MAX UNIT 131 395 mA T A = 25°C VDS for I DSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autopr obe. THERMAL DATA PARAMETER R jC TEST CONDITIONS PARAMETER R FET MMIC Thermal resistance, V+ = 8 V V DS(FET) = 6.18 V, I D(FET) = 5 mA, channel = 79.6° C 311.4 34.6 channel–to–backside Base = 70°C VDS(FET) = 5.08 V, I D(FET) = 8 mA, channel = 82.8° C 314.0 35.0 V DS(FET)= 4.36 V, I D(FET) =10 mA, channel = 83.8° C 315.7 35.2 (RES) TEST CONDITIONS Thermal resistance of drain termination resistor, 37.7 VRES =1.70 V, I D(MMIC) =45 mA, Base =70° C,R VRES =2.71 V, I D(MMIC) =72 mA, Base =70° C,R VRES =3.39 V, I D(MMIC) =90 mA, Base =70° C,R R jC jC jC (RES) UNIT °C/W UNIT = 89.5°C/W 76.8 °C/W = 89.7°C/W = 90.2°C/W 87.5 97.5 MMIC mounted with 38 m AuSn solder to car rier. I D (MMIC) = 9 x ID (FET). 5 TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com TGA8349-SCC R1 = 2.8Ω EQUIVALENT SCHEMATIC VD R2 = 37.7Ω V+ RF Output 122µm (9 places) R3 = 60.6Ω VCTRL R5 = 1.9KΩ RF Input R4 = 48.3Ω R 6= 1.9KΩ V– V –(AUX) TaN resistors R 1, and R 4 have a tolerance of +/ - 16 %. GaAs resistors R 2, R 3, R 5, and R 6 have a tolerance of +/- 30 %. RECOMMENDED ASSEMBLY DIAGRAM + V Bias conductor VCTRL 1000pF RF Output RF Input 1000pF V1000pF RF connections: Thermocompression bond using two 1-mil diameter, 20 to 30-mil-length gold bond wires at RF Input and at RF Output for optimum RF performance. Close placement of this capacitor is critical for performance. 6 TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com TGA8349-SCC 0,3120 (.0122) MECHANICAL DRAWING 2,2860 (.0900) 2,1117 (.0831) 0,4101 (.0161) 3,2283 (.1270) 4 1,6306 (.0641) 3 1,4822 (.0583) 5 1,0331 (.0406) 2 0,5373 (.0215) 1 0,2395 (.0094) 7 0,2386 (.0093) 6 0 0 0,1681 (.0066) 2,9438 (.1158) 3,4290 (.1350) 0,1295 (.0050) 3,2606 (.1283) Units: Millimeters (inches) Thickness: 0,1016 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: ± 0,0508 (0.002) Bond Bond Bond Bond Bond Bond Bond pad pad pad pad pad pad pad #1 #2 #3 #4 #5 #6 #7 (RF Input): (VCTRL): (VD): (V +): (RF Output): (V –): (V –(AUX)): 0,152 0,102 0,076 0,419 0,254 0,152 0,127 TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com x x x x x x x 0,203 0,152 0,152 0,152 0,330 0,152 0,152 (0.006 (0.004 (0.003 (0.016 (0.010 (0.006 (0.005 x x x x x x x 0.008) 0.006) 0.006) 0.006) 0.013) 0.006) 0.006) 7