T R I Q U I N T S E M I C TGA8810-SCC O N D U C Gain Block Amplifier ● ● ● ● ● ● 2 to 10 -GHz Frequency Range T O R , I N C . 8810 Operates from Single 5 -V Supply Unconditionally Stable 17-dB Typical Gain Typical ± 0.6-dB Gain Flatness 1,8796 x 1,6510 x 0,1524 mm (0.074 x 0.065 x 0.006 in.) PHOTO ENLARGEMENT DESCRIPTION The TriQuint TGA8810 -SCC is a self-biased general purpose amplifier. Two gain stages employ shunt feedback to pr oduce flat gain to 10 -GHz. Output power at 1- dB gain compression is typically 17-dBm and noise figur e is 6 -dB. The TGA8810 -SCC uses on -chip DC blocks to allow dir ect cascading. Three different on-chip self-bias resistors provide the flexibility of selecting bias cur rent and RF per formance. The TGA8810-SCC is available in chip for m and is r eadily assembled using automated equipment. Bond pad and backside metallization is gold plated for compatibil ity with eutectic alloy attachment methods as well as the ther mocompression and thermosonic wire-bonding processes. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com TGA8810-SCC 20 TYPICAL SMALL SIGNAL POWER GAIN VD1 = 5 V VD2 = 5 V T A = 25° C 19 18 Gain (dB) 17 16 15 14 13 12 11 10 2 3 4 5 6 7 8 9 10 Frequency (GHz) 7 TYPICAL NOISE FIGURE VD1 = 5 V VD2 = 5 V T A = 25° C Noise Figure (dB) 6 5 4 3 2 1 0 2 3 4 5 6 7 8 9 10 Frequency (GHz) 20 TYPICAL OUTPUT POWER VD1 = 5 V VD2 = 5 V T A = 25° C 19 Output Power (dBm) P1dB 18 17 16 15 14 13 12 2 3 4 5 6 7 8 9 10 Frequency (GHz) 2 TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com TGA8810-SCC 0 TYPICAL RETURN LOSS VD1 = 5 V VD2 = 5 V T A = 25° C Return Loss (dB) 10 20 30 40 Input Output 50 2 3 4 5 6 7 8 9 10 Frequency (GHz) ABSOLUTE MAXIMUM RATINGS Positive supply voltage, VD1, VD2 ........................................................................................................ 8.5 V Power dissipation at (or below) 25°C base -plate temperature, PD* ...................................................... 2.4 W Operating channel temperature, TCH ** .............................................................................................. 150°C Mounting temperature (30 sec), TM .................................................................................................. 320°C Storage temperature range, TSTG ............................................................................................ - 65 to 150°C Ratings over channel temperatur e range, TCH (unless otherwise noted) Stresses beyond those listed under “Absolute Maximum Ratings” m ay cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond those indicated under “RF Characteristics” is not implied. E xposure to absolute maximum rated conditions for extended periods may af fect device reliability. * For operation above 25°C base -plate temperature, derate linearly at the rate of 5 mW/°C. ** Operating channel temperature, TCH, directly af fects the device MTTF. For maximum life, it is r ecommended that channel temperature be maintained at the lowest possible level. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 3 TGA8810-SCC TYPICAL S-PARAMETERS Frequency S11 S21 S12 S22 GAIN (GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(°) (dB) 0.5 0.38 -104 0.03 -148 0.001 -13 0.92 -130 -30.8 1.0 0.29 -125 0.99 -177 0.003 180 0.79 165 -0.1 1.5 0.36 -134 4.24 114 0.009 122 0.48 111 12.5 2.0 2.5 0.40 0.36 -156 -169 6.88 7.49 42 -8 0.011 0.009 72 43 0.07 0.21 125 180 16.8 17.5 3.0 0.33 -173 7.58 -45 0.007 27 0.27 164 17.6 3.5 0.31 -175 7.59 -77 0.006 10 0.29 150 17.6 4.0 0.30 -175 7.53 -106 0.004 9 0.28 137 17.5 4.5 0.30 -176 7.36 -133 0.002 5 0.26 126 17.3 5.0 5.5 0.29 0.31 179 -178 7.10 7.02 -157 179 0.002 0.001 2 -53 0.22 0.17 115 109 17.0 16.9 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 0.33 0.33 0.32 0.29 0.23 0.15 0.11 0.24 0.44 179 173 166 156 140 110 33 -37 -75 -106 6.98 6.86 6.90 7.01 7.22 7.48 7.75 7.87 7.39 156 134 113 90 67 43 15 -15 -49 -83 0.001 0.002 0.003 0.004 0.005 0.007 0.009 0.011 0.013 0.016 -152 -178 169 173 168 177 175 170 162 153 0.12 0.07 0.04 0.02 0.00 0.02 0.03 0.06 0.09 0.11 110 111 120 140 2 0 24 52 58 51 16.9 16.7 16.8 16.9 17.2 17.5 17.8 17.9 17.4 16.0 0.64 6.34 VD1 = VD2 = 5 V, TA = 25°C Reference planes for S -parameter data include bondwir es as specified in the “Recommended Assembly Diagram”. RF CHARACTERISTICS PARAMETER GP SWR(in) SWR(out) P 1dB NF ∆G p TYP f = 2 to 10 GHz 17 f = 2 to 10 GHz 1.9:1 f = 2 to 10 GHz 1.2:1 Output power at 1–dB gain compression Noise figure f = 2 to 10 GHz f = 2 to 10 GHz Gain flatness f = 2 to 10 GHz f = 2 GHz f = 6 GHz f = 10 GHz f = 2 GHz f = 5 GHz f = 8 GHz Gain temperature coefficient IP3 TEST CONDITIONS Small–signal power gain Input standing wave ratio Output standing wave ratio TBP = -40°C to 90°C Output third–order intercept point 17 6 UNIT dB dBm dB ±0.6 dB -0.01 -0.02 dB/°C -0.02 24 26 dBm 25 V D1 = VD2 = 5 V, TA = 25°C (assembled per Equivalent Schematic unless other wise noted) TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 4 TGA8810-SCC DC CHARACTERISTICS I D = I D1+ I D2 PARAMETER TEST CONDITIONS TYP UNIT Total positive supply current VD1 = V D2 = 5 V 90 mA T A = 25°C Bond Pad #2 EQUIVALENT SCHEMATIC VD1 Bond Pad #3 VD2 RF Output FET 2 500 m FET 1 500 m RF Input 5 0.1 pF 5 C1 C2 9 9 0.2 pF 6 RS12 RS13 RS11 6 RS21 RS23 RS22 RS11, RS12, RS13, RS21, RS22, and RS23 provide the flexibility of selecting bias cur rent and RF per formance. C1 and C2 can be used in tuning for impr oved input match. For best r esults, use the assembly configuration shown in the “Recommended Assembly Diagram” on page 6. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 5 TGA8810-SCC RECOMMENDED ASSEMBLY DIAGRAM VD2 68 pF T.I.P.N. 3022039-1 ~2.3nH RF Input RF Output T.I.P.N. 3022039-1 ~2.3nH 68 pF VD1 RF connections: bond using two 1 -mil diameter, 20 to 25 -mil-length gold bond wir es at both RF Input and RF Output for optimum RF per formance. Close placement of exter nal components is essential to stability. Bond using 0 .7-mil diameter wires on bond pads 7, 11, 13, and 14 since they ar e less than the .004 x .004 needed for 1-mil diameter wire. Two on-chip to on -chip wire bonds are needed for bond pads 1, 2, 3, and 13. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 6 TGA8810-SCC 1,3208 (0.0520) 0,1245 (0.0049) MECHANICAL DRAWING 1,3970 (0.0550) 1,7475 (0.0688) 1,6510 (0.0650) 1,5240 (0.0600) 4 1,4757 (0.0581) 2 1,3157 (0.0518) 3 0,9881 (0.0389) 1 0,7620 (0.0300) 14 0,6223 (0.0245) 13 0,1600 (0.0063) 1,0185 (0.0401) 5 12 10 11 8 9 0,1499 (0.0059) 6 7 0 0 0,1854 (0.0073) 0,1118 (0.0044) 0,4953 (0.0195) 0,3378 (0.0133) 0,8306 (0.0327) 0,6604 (0.0260) 1,1379 (0.0448) 0,9855 (0.0388) 1,7501 (0.0689) (0.0740) Units: millimeters (inches) Thickness: 0,1524 (0.006) (r eference only) Chip-edge-to-bond-pad dimensions are shown to center of bond pad. Chip size tolerance: ± 0,0508 (0.002) Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond TriQuint Semiconductor, Inc. • Texas Facilities pad pad pad pad pad pad pad pad pad pad pad pad pad pad #1 (RF Input): #2 : #3 : #4 (VD2 ): #5 (RF Output): #6 (RS22 ): #7 (RS23 ): #8 (RS21 ): #9 (VD1 ): #10 (RS11): #11 (RS13 ): #12 (RS12 ): #13 (C2): #14 (C1): • (972) 995-8465 0,1016 x 0,1778 (0.0040 x 0.0070) 0,1016 x 0,1016 (0.0040 x 0.0040) 0,1016 x 0,1016 (0.0040 x 0.0040) 0,1016 x 0,1016 (0.0040 x 0.0040) 0,0940 x 0,2540 (0.0037 x 0.0100) 0,1016 x 0,1016 (0.0040 x 0.0040) 0,1016 x 0,0787 (0.0040 x 0.0031) 0,1067 x 0,1016 (0.0042 x 0.0040) 0,1016 x 0,1041 (0.0040 x 0.0041) 0,1067 x 0,1016 (0.0042 x 0.0040) 0,1016 x 0,0787 (0.0040 x 0.0031) 0,1016 x 0,1016 (0.0040 x 0.0040) 0,0762 x 0,0762 (0.0030 x 0.0030) 0,0762 x 0,0762 (0.0030 x 0.0030) • www.triquint.com 7