TRIQUINT TGA8035-SCC

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TGA8035-SCC
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Gain Block Amplifier
●
●
●
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●
6 to 18- GHz Frequency Range
T O
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8035
13- dB Typical Gain
2.2:1 Typical Input/Output SWR
12.5- dBm Typical Output Power at 1 -dB Gain Compression
5 - dB Typical Noise Figure
2,4892 x 2,0574 x 0,1143 mm (0.098 x 0.081 x 0.0045 in.)
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGA8035 - SCC is a two - stage GaAs monolithic amplifier designed for use as
a broadband general-purpose gain block. T wo 300 - µm gate - width FETs provide a 13- dB typical gain and
a 5- dB noise figure from 6 to 18- GHz. Typical output power at 1- dB gain compression is 12.5- dBm.
Shunt feedback is used around each active device to improve gain flatness and standing - wave ratio
(SWR). Ground is provided to the circuitry through vias to the backside metallization.
The TGA8035-SCC amplifier is suitable for a variety of broadband electronic warfare (EW) applications.
The combination of gain, power, and noise figure makes this device an exceptional post amplifier
following a low-noise amplifier.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment
methods as well as thermocompression and thermosonic wire- bonding processes. The TGA8035 - SCC
is supplied in chip form and is readily assembled using automated equipment.
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
TGA8035-SCC
20
TYPICAL
SMALL-SIGNAL
POWER GAIN
VD1
VD2
VD1
, V, D2
= 5= V5 V
50%I DSS1
I DSS1
I D1= =50%
I D1
I D2= =50%
50%I DSS2
I DSS2
I D2
25°C
T ATA= =25°
C
18
16
Gain (dB)
14
12
10
8
6
4
2
0
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
8
TYPICAL
NOISE FIGURE
D1,,VVD2
D2==
VVD1
5 5V V
50% I DSS1
IID1
D1==50%
DSS1
50% I DSS2
IID2
DSS2
D2==50%
TTAA == 25°
C
25°C
7
Noise Figure (dB)
6
5
4
3
2
1
0
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
20
TYPICAL
OUTPUT POWER
VVD1
VV
D1,,VVD2
D2==5 5
= 50% I DSS1
IID1
D1 = 50% DSS1
IID2 ==50%
DSS2
50% II DSS2
D2
TTA == 25°
C
25°C
A
18
P1dB
Output Power (dBm)
16
14
12
10
8
6
4
2
0
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
2
TGA8035-SCC
0
TYPICAL
RETURN LOSS
V ,V =5V
VD1D1, V D2D2= 5 V
50% II DSS1
I ID1D1==50%
DSS
50% IIDSS
DSS2
I ID1D2==50%
25°C
TTAA==25°
C
Return Loss (dB)
2
4
6
8
10
12
Input
Input
Output
Output
14
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
ABSOLUTE
MAXIMUM RATINGS
Drain supply voltage, VD1, VD2 ................................................................................................................
8V
Drain supply voltage range with r espect to negative supply voltage, VD1 - VG1, VD2 - VG2 .................... 0 V to 8 V
Negative supply voltage range, VG1, VG2 ......................................................................................
0 V to - 5 V
Positive supply current, ID1 .................................................................................................................. I DSS1
Positive supply current, ID2 .................................................................................................................. I
Power dissipation at (or below) 25 C base-plate temperature, PD* ......................................................
Input continuous wave power, PIN ....................................................................................................
DSS2
1.4 W
20 dBm
Operating channel temperature, TCH ** .............................................................................................. 150 C
Mounting temperature (30 sec), TM .................................................................................................... 320 C
Storage temperature range, TSTG ............................................................................................
- 65 to 150 C
Ratings over operating channel temperature range, T CH (unless otherwise noted)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under “RF Characteristics” is not implied. Exposure to absolute maximum rated conditions for
extended periods may affect device reliability.
* For operation above 25 C base - plate temperature, derate linearly at the rate of 3 mW/ C.
* Operating channel temperatur e (TCH) directly affects the device MTTF. For maximum life, it is recommended
that channel temperature be maintained at the lowest possible level.
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
3
TGA8035-SCC
TYPICAL S-PARAMETERS
Frequency
(GHz)
S 11
MAG
S 21
S 12
S 22
ANG(° )
MAG
ANG(° )
MAG
ANG(° )
MAG
GAIN
ANG(° )
(dB)
5.0
5.5
0.54
0.35
75
71
2.34
3.49
55
9
0.013
0.018
109
77
0.59
0.47
73
61
7.4
10.9
6.0
6.5
0.31
0.31
75
62
4.33
4.89
-34
-73
0.021
0.022
46
15
0.39
0.33
49
33
12.7
13.8
7.0
7.5
0.28
0.24
34
-7
5.16
5.28
-108
-141
0.022
0.021
-15
-44
0.28
0.25
14
-7
14.2
14.5
8.0
8.5
9.0
0.25
0.30
0.37
-53
-91
-117
5.27
5.05
4.92
-172
161
136
0.021
0.020
0.019
-75
-102
-124
0.24
0.26
0.30
-31
-52
-71
14.4
14.1
13.8
9.5
10.0
0.42
0.46
-138
-154
4.82
4.71
112
90
0.021
0.021
-144
-164
0.34
0.38
-88
-102
13.7
13.5
10.5
11.0
11.5
12.0
12.5
13.0
13.5
0.48
0.48
0.46
0.43
0.38
0.33
0.27
-168
178
166
153
140
129
123
4.68
4.73
4.91
5.13
5.28
5.42
5.52
69
48
27
5
-18
-41
-64
0.020
0.020
0.021
0.021
0.021
0.021
0.021
177
174
161
151
141
132
120
0.42
0.43
0.45
0.46
0.45
0.43
0.41
-115
-125
-134
-144
-154
-164
-173
13.4
13.5
13.8
14.2
14.5
14.7
14.8
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
0.25
0.24
0.24
0.22
0.21
0.24
0.24
0.23
0.28
0.35
0.41
0.53
0.68
118
112
100
89
81
67
46
27
-4
-48
-92
-122
5.68
5.61
5.59
5.40
5.10
5.05
5.12
5.06
5.27
5.49
4.91
-89
-113
-138
-163
174
153
129
103
78
46
9
0.020
0.017
0.013
0.014
0.015
0.012
0.007
0.010
0.005
0.007
0.012
109
97
96
94
80
47
44
28
-38
-17
-85
0.39
0.38
0.35
0.32
0.31
0.33
0.32
0.34
0.35
0.33
0.29
178
167
154
143
136
123
114
108
93
83
73
15.1
15.0
14.9
14.6
14.1
14.1
14.2
14.1
14.4
14.8
13.8
4.01
3.37
-23
-55
0.012
-152
0.19
75
0.008
156
0.18
100
12.1
10.5
-149
I D1 = 50% I DSS1, I D2 = 50% I DSS2, VD1, VD2 = 5 V, TA = 25°C
Reference planes for S-parameter data include bond wires as specified in the “Recommended Assembly
Diagram.”
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
4
TGA8035-SCC
RF CHARACTERISTICS
PARAMETER
GP
SWR(in)
SWR(out)
P 1dB
NF
TEST CONDITIONS
Small–signal power gain
Input standing–wave ratio
Output standing–wave ratio
Output power at 1–dB gain compression
Noise figure
f
f
f
f
f
TYP
= 6 to 18 G Hz
= 6 to 18 GHz
= 6 to 18 G Hz
= 6 to 18 G Hz
= 6 to 18 GHz
UNIT
13 dB
2.2:1
—
2.2:1
—
12.5 dBm
5 dB
VD1, VD2 = 5 V, VG1 = - 1 V, VG2 = - 1 V, TA = 25°C
DC CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I DSS1 Total zero–gate–voltage drain current at saturation
for FET1 *
I DSS2 Total zero–gate–voltage drain current at saturation
for FET2 **
V DS = 0.5 V to 3.5 V,
V GS = 0
V DS = 0.5 V to 3.5 V,
V GS = 0
MIN
MAX
UNIT
36
108
mA
36
108
mA
TA = 25°C
* VDS1 for I DSS1 is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.
** VDS2 for I DSS2 is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.
THERMAL INFORMATION
PARAMETER
R
JC
TEST CONDITIONS
Thermal resistance,
channel–to–backside
ID=72 mA, V D=5V
TEST CONDITIONS
25°C Base, 80°C Channel**
85°C Base, 151°C Channel**
100°C Base, 169°C Channel**
FET
MMIC*
UNIT
152.5
184.7
192.8
76.3
92.4
96.4
°C/W
* MMIC thermal resistance is the peak FET temperature rise divided by the total MMIC dissipated power (.72 W).
** Hottest Gate Channel (Center of either FET).
EQUIVALENT
SCHEMATIC
R F Output
FET 2
300 m
FET 1
300 m
RF Input
V D1
V D2
VG2
V G1
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
5
TGA8035-SCC
TYPICAL BIAS NETWORK
1
RF Input
2
TGA8035
RF Output
3
4
5
6
VD1,VD2
VG1,VG2
CBypass
RBypass
CBypass
RECOMMENDED
ASSEMBLY DIAGRAM
RF Input
RF Output
25
0.01 F
0.01 F
VD1,VD2
VG1,VG2
RF connections: bond using two 1-mil diameter, 20 to 25 - mil- length gold bond wires at both RF Input and
RF Output for optimum RF performance.
Close placement of external components is essential to stability.
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
6
TGA8035-SCC
0,1803
(0.0071)
MECHANICAL DRAWING
2,3114
(0.0910)
2,0574
(0.081)
1,4656
(0.0577)
1
2
0,2108
(0.0083)
6
5
4
3
0,4039
(0.0159)
0,9246
(0.0364)
1,8034
(0.0710)
2,1590
(0.0850)
1,4681
(0.0578)
0,2108
(0.0083)
0
0
2,4892
(0.0980)
Units: millimeters (inches)
Thickness: 0,1143 (0.045) (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad.
Chip size tolerance: ± 0,0508 (0.002)
Bond
Bond
Bond
Bond
Bond
Bond
TriQuint Semiconductor, Inc.
•
Texas Facilities
pad
pad
pad
pad
pad
pad
#1
#2
#3
#4
#5
#6
(RF Input):
(RF Output):
(VD2):
(VG2):
(VD1):
(VG1):
• (972) 995-8465
0,0940 x 0,2362 (0.0037 x 0.0093)
0,0991 x 0,2413 (0.0039 x 0.0095)
0,2286 x 0,1143 (0.0090 x 0.0045)
0,2286 x 0,1143 (0.0090 x 0.0045)
0,2286 x 0,1143 (0.0090 x 0.0045)
0,2286 x 0,1143 (0.0090 x 0.0045)
• www.triquint.com
7