TRIQUINT TGA8300

T
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I
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TGA8300- SCC
C
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Gain Block Amplifier
●
●
●
●
●
●
2 to 18- GHz Fr equency Range
T O
R ,
I
N
C .
8300
20- dBm Typical Output Power at 1 -dB Gain Compr ession
7.5- dB Typical Gain
Input/Output SWR 1.5:1
On - Chip Blocking Capacitor Allows Easy Cascading
2,362 x 1,625 x 0,152 mm (0.093 x 0.064 x 0.006 in.)
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGA8300 - SCC is a GaAs monolithic distributed amplifier designed for use as a
multioctave general - purpose gain block. Four 189 - µm gate width FETs provide 7.5 d
- B nominal gain
and 5.5 - dB noise figur e from 2 to 18- GHz. Typical power output is 20 - dBm at 1- dB gain compression.
Typical input and output SWRs ar e 1.5:1. Ground is provided to the circuitry through vias to the
backside metallization.
The TGA8300 - SCC is supplied in chip for m and is engineered for high - volume automated assembly .
All metal sur faces are gold plated to be compatible with ther mocompression and thermosonic
wire- bonding processes.
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
TGA8300 -SCC
10
TYPICAL
SMALL-SIGNAL
POWER GAIN
V+ = 6 V
V++ = 6 V
50% IIDSS
II + == 50%
DSS
= 25°C
TTAA =25°
C
Gain (dB)
8
6
4
2
0
2
6
10
14
18
Frequency (GHz)
10
TYPICAL
NOISE FIGURE
VV++ == 66VV
I ++ ==50%
50%I DSS
I DSS
=25°
C
TAA =
25°C
Noise Figure (dB)
8
6
4
2
0
2
6
10
14
18
Frequency (GHz)
25
TYPICAL
OUTPUT POWER
P1dB
V ++ ==66VV
50%I DSS
I DSS
I ++ ==50%
TTAA =25°
C
= 25°C
Output Power (dBm)
20
15
10
5
0
2
6
10
14
18
Frequency (GHz)
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
2
TGA8300 -SCC
0
TYPICAL
RETURN LOSS
+
V+V= 6= V6 V
I I++ = 50% I DSS
DSS
T ATA=25°
C
= 25°C
Return Loss (dB)
6
12
18
24
30
Input
Input
Output
Output
36
2
4
6
8
10
12
14
16
18
Frequency (GHz)
ABSOLUTE
MAXIMUM RATINGS
Positive supply voltage, V + .................................................................................................................... 8 V
Negative supply voltage range, V – .............................................................................................. 0 V to - 5 V
Power dissipation, PD at (or below) 25 C base-plate temperatur e* ...................................................... 1.8 W
Operating channel temperature, TCH** ......................................................... ..................................... 150 C
Mounting temperature (30 sec), TM .................................................................................................... 320 C
Storage temperature range, TSTG ............................................................................................ - 65 to 150 C
Ratings over operating channel temperature range, T CH (unless otherwise noted)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause per manent damage to the device.
These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond
those indicated under “RF Characteristics ” is not implied. Exposure to absolute maximum rated conditions for
extended periods may af fect device reliability.
* For operation above 25 C base-plate temperature, derate linearly at the rate of 3.8 mW/ C.
**Operating channel temperatur e directly affects the device MTTF . For maximum life, it is r ecommended that
channel temperature be maintained at the lowest possible level.
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
3
TGA8300 -SCC
TYPICAL S -PARAMETERS
Frequency
S 11
(GHz)
MAG
1.0
0.40
1.5
2.0
S 21
S 12
S 22
GAIN
MAG
ANG (° )
MAG
ANG (° )
MAG
4
2.32
-146
0.017
-163
0.52
-110
7.3
0.40
0.28
-151
180
2.00
2.20
167
155
0.015
0.017
97
91
0.32
0.20
-172
109
6.0
6.8
2.5
0.26
167
2.34
137
0.022
75
0.20
56
7.4
3.0
3.5
0.25
0.25
158
151
2.41
2.45
121
105
0.027
0.031
59
40
0.20
0.18
27
10
7.6
7.8
4.0
0.25
143
2.46
89
0.033
25
0.15
-2
7.8
4.5
5.0
0.25
0.25
137
132
2.45
2.44
74
60
0.037
0.040
12
-3
0.11
0.08
-10
-13
7.8
7.7
5.5
0.24
127
2.42
46
0.043
-17
0.06
-11
7.7
6.0
6.5
0.23
0.21
122
116
2.42
2.41
32
19
0.045
0.048
-31
-45
0.06
0.06
-9
-10
7.7
7.6
7.0
7.5
8.0
0.19
0.17
0.14
112
106
101
2.43
2.45
2.45
5
-8
-22
0.051
0.054
0.058
8.5
9.0
9.5
10.0
10.5
0.11
0.08
2.45
2.46
0.062
0.066
0.070
-16
-30
-44
-81
0.03
0.05
130
2.46
-126
-139
-143
174
148
7.7
7.8
7.8
7.8
7.8
0.05
-36
-50
-64
-78
0.06
0.06
0.04
0.03
0.05
97
95
105
-58
-72
-86
-100
-113
0.05
0.07
148
2.45
2.44
-92
146
0.079
0.082
11.0
11.5
ANG (° )
2.47
0.075
0.09
134
2.42
-106
-120
12.0
0.11
12.5
13.0
13.5
0.14
0.17
0.20
117
97
76
2.43
2.46
2.49
-134
-148
-162
2.51
14.0
14.5
0.23
0.25
58
42
2.54
-177
-168
0.095
0.100
0.104
0.109
27
2.54
-152
0.113
15.0
15.5
16.0
0.25
15
0.23
0.20
0.17
6
-1
-3
2.51
2.47
-136
-121
0.114
0.115
2.46
-105
0.115
2
2.44
2.39
-90
0.12
0.09
32
60
2.40
2.44
-74
-58
0.22
59
2.53
0.30
0.28
0.21
44
21
2.64
2.62
-42
-24
4
-19
-8
2.44
-42
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
0.15
-152
0.086
0.091
0.07
0.08
ANG (° )
(dB)
7.8
7.8
126
7.8
105
82
7.7
7.7
60
7.7
7.8
-165
-177
0.10
171
159
147
135
0.13
0.14
0.14
0.13
38
17
121
106
0.12
-32
7.9
8.0
8.1
0.10
-66
-110
8.1
8.0
-158
165
7.9
7.8
134
116
7.6
98
80
7.6
7.7
0.11
0.09
0.10
-4
91
77
61
0.13
0.116
46
0.17
0.116
0.119
-3
15
0.21
0.23
0.125
0.136
0.150
-0
-16
-36
0.23
0.19
66
8.1
0.155
-59
0.12
0.11
65
100
0.151
-80
0.19
107
8.4
8.4
7.7
7.7
V + = 6 V, I+ = 50% I DSS, TA = 25°C
Refer ence planes for S - parameter data include bond wires as specified in the “Recommended Assembly
Diagram.”
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
4
TGA8300 -SCC
RF CHARACTERISTICS
PARAMETER
TEST CONDITIONS
GP
SWR(in)
SWR(out)
P 1dB
NF
Small–signal power gain
Input standing wave ratio
Output standing wave ratio
Output power at 1–dB gain compression
Noise figure
IP 3
Output third–order intercept point
TYP
f = 2 to 18 GHz
f = 2 to 18 GHz
f = 2 to 18 GHz
f= 2 to 18 GHz
f = 2 to 18 GHz
f = 8 GHz
f= 12 GHz
f =18 GHz
UNIT
7.5
dB
1.5:1
1.4:1
20
dBm
5.5
dB
32
28
dBm
27
V + = 6 V, I+ = 50% I DSS, TA = 25°C
DC CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I DSS Total zero–gate–voltage drain current
at saturation
VDS = 0.5 V to 3.5 V, V GS = 0
MIN
MAX
UNIT
130
300
mA
TA = 25°C
VDS for I DSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.
THERMAL INFORMATION
PARAMETER
R
Thermal resistance, channel–to–backside
JC
TEST CONDITIONS
NO M
V + = 6 V, I+ = 50% I DSS
45
UNIT
°C/W
EQUIVALENT
SCHEMATIC
RF
Output
V+
FET 1
189 m
FET 2
189 m
FET 3
189 m
FET 4
189 m
RF
Input
V-
RECOMMENDED TEST
CONFIGURA TION
RF Input
TriQuint Semiconductor, Inc.
•
Texas Facilities
DC Block
• (972) 995-8465
DUT
• www.triquint.com
RF Output
5
TGA8300-SCC
+
V =6V
TYPICAL BIAS NETWORK
Rd-Q
CBypass
2
1
RF Input
TGA8300
CBlock
3
RF Output
4
V - = -1 V
CBypass
RECOMMENDED
ASSEMBLY DIAGRAM
V+
0.01 F
25
RF Output
RF Input
0.01 F
V-
RF connections: Bond using three 1- mil diameter, 20 to 30- mil-length gold bond wires at RF input and two 1 - mil
diameter, 20 to 30 - mil- length gold bond wires at RF output for optimum RF per formance.
Close placement of external components is essential to stability .
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com
6
TGA8300-SCC
0,1702
(0.0067)
MECHANICAL DRAWING
2,2073
(0.0869)
1,6256
(0.0640)
1,4199
(0.0559)
0,1803
(0.0071)
2
3
1,1227
(0.0442)
4
0,3073
(0.0121)
1
0
0,1524
0 (0.0060)
2,2047
(0.0868)
2,3622
(0.0930)
Units: millimeters (inches)
Thickness: 0,1524 (0.0060) (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad.
Chip size tolerance: ± 0,0508 (0.0020)
Bond
Bond
Bond
Bond
pad
pad
pad
pad
#1
#2
#3
#4
(RF Input):
(V +):
(RF Output):
(V –):
0,1270 x 0,1016 (0.0050 x 0.0040)
0,1575 x 0,1245 (0.0062 x 0.0049)
0,1321 x 0,1016 (0.0052 x 0.0040)
0,0635 (0.0025) (radius)
7
TriQuint Semiconductor, Inc.
•
Texas Facilities
• (972) 995-8465
• www.triquint.com