TRIQUINT TGA4943-SL

TGA4943-SL
28 Gb/s 8Vpp Optical Modulator Driver
Key Features
Measured Performance
•
•
•
•
•
•
•
28 Gb/s Performance
Single Ended Input and Output
Adjustable Output Amplitude, 3 Vpp – 9 Vpp
Low Additive RMS Jitter, 400 fsec
High Output Drive, 8Vpp with 0.4 Vpp Input
Gain, 32 dB at 20 GHz
•
•
•
Rise Times <12 psec
Low DC Power Dissipation, 1.7 W for Vout =
8Vpp at Vd=6 V
Hot Pluggable
Package Size: 14.4 x 7 x 2 mm
Primary Applications
Bias conditions: Vd1,2,3 = 7 V, Idq = 310 mA,
Vc1,2,3 = 0.7, 0.7, 0.8 V Typical
•
•
22 Gb/s, 0.48 Vpp Input, Vout = 8 Vpp.
DQPSK
40 GB/s Optical Market: DQPSK (2x)
100 GB/s Optical Market: DP-QPSK (4x)
Product Description
The TriQuint TGA4943-SL is a three stage optical
modulator driver amplifier designed to operate at
frequencies that target the 28 Gb/s optical market
using an 14.4 x 7 x 2 mm surface mount system in
package (SIP).
Vin = 0.5 Vpp, Vout = 8Vpp, 21.5 Gbps, PRBS 2^31 -1
The TGA4943-SL consists of three high
performance wideband amplifiers assembled in a
surface mount package combined with a minimum
of off-chip components. A single TGA4943-SL
placed between the MUX and Optical Modulator
provides OEMs with a modulator driver surface
mount solution.
The TGA4943-SL provides Metro and Long Haul
designers with system critical features such as:
low power dissipation, low rail ripple, high voltage
drive capability (3 Vpp amplitude adjustable up to 9
Vpp), low output jitter, and low input drive
sensitivity (0.4 Vpp – 1 Vpp at Vout = 8Vpp).
The TGA4943-SL is lead-free and RoHS
compliant. Evaluation boards are available upon
request.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
June 2009 © Rev A
1
TGA4943-SL
Table I
Absolute Maximum Ratings 1/
Symbol
Vd1, Vd2, Vd3
Vd1-Vg1, Vd2-Vg2,
Vd3-Vg3
Parameter
Value
Notes
Drain Voltage
9V
2/ 3/ 4/
Drain to Gate Voltage
10 V
2/ 3/ 4/
Vg1, Vg2, Vg3
Gate Voltage Range
-5 to 0 V
Vc1, Vc2, Vc3
Control Voltage Range
(Vd-7) to +6 V
3/ 4/
Id1, Id2
Drain Current
100 mA
2/
Id3
Drain Current
250 mA
2/
Ig1, Ig2, Ig3
Gate Current Range
-15 to 21 mA
4/
Ic1, Ic2, Ic3
Control Current Range
-15 to 21 mA
4/
Vin_pp
Peak-Peak Input Voltage
Pin
Input Continuous Wave Power
Pd
Max Power Dissipation
Tch
Maximum Channel Temperature
7V
24 dBm
2/
3.05
5/
200 °C
1/
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
3/
Assure -0.5 ≤ Vd - Vc ≤ 7 V.
4/
HOT PLUGGABLE: Comply with voltage and currents outlined in Max Ratings Table.
5/
Maximum Power Dissipation is based upon Baseplate temperature of 80 °C and Channel
Temperature of 200 °C, using the thermal resistance published in Table IV.
2
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June 2009 © Rev A
TGA4943-SL
Table II
Recommended Operating Conditions
Output
Voltage
(Vpp)
Drain
Voltage:
Vd1,
Vd2, Vd3
(V)
Quiescent
Drain
Current:
Idq1, Idq2,
Idq3 (mA)
Under RF
Drive
Drain
Current:
Id1+ Id2 +
Id3
(mA)
Control
Voltage:
Vc1, Vc2,
Vc3 (V)
Gate Voltage:
Vg1, Vg2, Vg3
(V)*
Pdiss
(W)
3.6
5
40, 30, 84
198
0.7, 0.7, -0.23
-0.56, -1.89, -1.34
0.96
4
5
40, 30, 100
207
0.7, 0.7, -0.01
-0.56, -1.89, -1.25
1.00
5
5
40, 30, 133
230
0.7, 0.7, 0.23
-0.56, -1.89, -1.09
1.09
6
5
40, 30, 160
254
0.7, 0.7, 0.42
-0.56, -1.89, -0.97
1.18
7.8
5
40, 30, 191
296
0.7, 0.7, 0.70
-0.56, -1.89, -0.85
1.33
4
6
51, 51, 63
233
0.7, 0.7, -0.06
-0.51, -1.68, -1.53
1.32
5
6
51, 51, 100
257
0.7, 0.7, 0.14
-0.51, -1.68, -1.30
1.42
6
6
51, 51, 135
281
0.7, 0.7, 0.36
-0.51, -1.68, -1.11
1.51
7
6
51, 51, 167
305
0.7, 0.7, 0.59
-0.51, -1.68, -0.95
1.59
8
6
51, 51, 201
330
0.7, 0.7, 0.86
-0.51, -1.68, -0.78
1.66
6
7
62, 50, 98
302
0.7, 0.7, 0.24
-0.47, -1.74, -1.34
2.03
7
7
62, 50, 144
326
0.7, 0.7, 0.45
-0.47, -1.74, -1.09
2.16
8
7
62, 50, 179
348
0.7, 0.7, 0.66
-0.47, -1.74, -0.92
2.28
9
7
62, 50, 223
373
0.7, 0.7, 0.91
-0.47, -1.74, -0.69
2.4
10
8
82, 73, 240
434
0.7, 0.7, 2.04
-0.4, -1.52, -0.61
2.97
* Gate and control voltages should be adjusted to reach target drain currents and optimal
eye performance and may vary from above voltages.
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
June 2009 © Rev A
TGA4943-SL
Table III
RF Characterization Table
Bias: Vd = 7 V, Idq=300 mA, Vc1, Vc2 = 0.7 V, Vc3 = +0.8 V, typical
Small Signal Characteristics
SYMBOL
PARAMETER
TEST
CONDITIONS
f = 0.1 - 20 GHz
f = 20.1 - 30 GHz
f = 30.1 - 36 GHz
f = 36.1 – 40 GHz
MIN
NOMINAL
MAX
UNITS
-
32
30
28
20
-
dB
Gain
Small Signal Gain
IRL
Input Return Loss
f = 0.1 - 10 GHz
f = 10.1 - 20 GHz
f = 20.1 – 30 GHz
f = 30.1 – 40 GHz
-
15
13
11
4
-
dB
ORL
Output Return Loss
f = 0.1 - 24 GHz
f = 24.1 - 34 GHz
f = 34.1 – 40 GHz
-
15
8
6
-
dB
BW
3 dB Bandwidth
-
27
-
GHz
f(x) – f(1 GHz) = 3 dB
x = freq of 3 dB BW
4
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June 2009 © Rev A
TGA4943-SL
Table III - Cont.
RF Characterization Table
Bias: Vd = 7 V, Idq = 300 mA, Vc1, Vc2 = 0.6 V, Vc3 = 0.8 V, typical
Electrical Eye Test Conditions: Vin = 0.5 Vpp, PRBS 231-1, 21.5 Gbps, Crossing = 50% +/- 2%
SYMBOL
PARAMETER
Vout_Max
Maximum Eye
Amplitude
Tr
TEST
CONDITIONS
MIN
NOMINAL
MAX
UNITS
500 mVpp Input
-
10
-
Vpp
Risetime
8 Vpp Output
-
11
-
psec
Tf
Falltime
8 Vpp Output
11
psec
SNR
Signal to Noise
Ratio
8 Vpp Output
20
dB
Eye Opening
1/
8 Vpp Output
85
%
Jrms_Add
Additive
Jitter 2/
8 Vpp Output
400
fsec
Jpp
P-P Jitter
8 Vpp Output
7
psec
Id
Total Drain Current
8 Vpp Output
-
375
-
1/
Eye Opening defined as: [ Eye Height (Vpp)/Eye Amplitude (Vpp)] *100
2/
Additive Jitter defined as: Sqrt [(Total RMS Jitter)^2 – (Input RMS Jitter)^2]
mA
5
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June 2009 © Rev A
TGA4943-SL
Table IV
Power Dissipation and Thermal Properties
Parameter
Test Conditions
Thermal Resistance, θjc
Vd = 7 V
Idq_tot = 300 mA
Idq3=190 mA
Pd_stage3 = 1.33 W
Tbaseplate = 85 °C
Thermal Resistance, θjc
Under RF Drive
Vout = 8 Vpp, Vd = 7V
Id3 = 190 mA
Pd_stage3 =1.17 W
Tbaseplate = 85 °C
Value
Notes
θjc = 39.4 °C/W
Tchannel = 137.4 °C
Tm = 4.3 E+6 Hrs
1/, 2/
θjc = 39.4 °C/W
Tchannel = 131 °C
Tm = 9.2 E+6 Hrs
Storage Temperature
-65 to 150 °C
1/
Channel operating temperature will directly affect the device median lifetime (Tm). For maximum life,
it is recommended that channel temperatures be maintained at the lowest possible levels.
2/
θjc is modeled based upon hottest stage (stage 3) because there is negligible thermal coupling
between stages. It is the thermal resistance of the part calculated from the junction to the bottom of
the TGA4943-SL package.
To calculate the temperature rise, calculate the dissipated power in the third stage (Pdiss = Idq3*Vd3)
and multiply by θjc. For example: Tbase = 85 °C, Idq3 = 190 mA, Vd3 = 7V. Pdiss_stage3 = 1.33 W.
θjc=39.4 °C/W. Temperature rise = θjc*Pdiss = 52.4 C; Tchannel = Tbase + Temp rise = 137.4 °C
Median Lifetime (Tm) vs. Channel Temperature
1.E+13
Median Lifetime (Hours)
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
FET5
25
50
75
100
125
150
175
200
Channel Temperature (°C)
6
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June 2009 © Rev A
TGA4943-SL
Vd = 7 V, Vin = 0.5 Vpp, Vout = 6 Vpp, 21.5 Gb/s, PRBS 231 -1
Vd = 7 V, Vin = 0.5 Vpp, Vout = 7 Vpp, 21.5 Gb/s, PRBS 231 -1
7
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June 2009 © Rev A
TGA4943-SL
Vd = 7 V, Vin = 0.5 Vpp, Vout = 8 Vpp, 21.5 Gb/s, PRBS 231 -1
Vd = 7 V, Vin = 0.5 Vpp, Vout = 9 Vpp, 21.5 Gb/s, PRBS 231 -1
8
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June 2009 © Rev A
TGA4943-SL
Vd = 7 V, Vin = 0.5 Vpp, Vout = 10.6 Vpp, 28 Gb/s, PRBS 231 -1
28 Gbps
9
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June 2009 © Rev A
TGA4943-SL
Measured Data: Vd = 7 V, Vc1, 2, 3 = 0.7, 0.7, 0.8 V,
Idq1, 2, 3 = 40, 60, 210 mA,
Vin = 0.48 Vpp, Vout = 8 Vpp, 22 Gb/s
DPSK
DQPSK
10
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June 2009 © Rev A
TGA4943-SL
Measured Data
Bias Conditions: Vd = 7 V, Idq = 293 mA,
Vg1,2,3 = -0.5, -1.7, -0.9 V, Vc1,2,3 = 0.7, 0.7, 0.7 V Typical
40
Gain (dB)
30
20
10
0
0
10
20
30
40
50
Frequency (GHz)
0
IRL, ORL (dB)
-10
-20
-30
IRL
-40
ORL
-50
0
10
20
30
40
50
Frequency (GHz)
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June 2009 © Rev A
11
TGA4943-SL
Measured Data: Vin = 0.5 Vpp, 21.5 Gb/s, Vd = 7V
RMS Source Jitter = 673 fs
400
9
350
8
Additive P-P Jitter
300
7
250
6
200
5
150
4
100
3
5
6
7
8
9
10
Additive P-P Jitter (ps)
Additive RMS Jitter (fs)
Additive RMS Jitter
11
21.0
90
20.5
85
SNR
20.0
80
Eye Opening
19.5
75
19.0
70
18.5
65
18.0
60
5
6
7
8
9
10
Eye Opening (%)
SNR (dB)
Vout (Vpp)
11
Vout (Vpp)
12
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
June 2009 © Rev A
TGA4943-SL
Measured Data: Vin = 0.5 Vpp, 21.5 Gb/s, Vd = 7 V
350
3.50
Idq3
3.00
Pdiss
250
2.50
200
2.00
150
1.50
100
1.00
50
0.50
0
0.00
5
6
7
8
9
10
Pdiss (W)
Idq3 (mA)
300
11
3.0
0.0
2.5
-0.5
2.0
-1.0
1.5
-1.5
1.0
-2.0
0.5
-2.5
Vc3
0.0
-3.0
Vg3
-0.5
-3.5
-1.0
-4.0
5
6
7
8
9
Vg3 (V)
Vc3 (V)
Vout (Vpp)
10
11
Vout (Vpp)
13
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June 2009 © Rev A
TGA4943-SL
Measured Data: Vin = 0.5 Vpp, 21.5 Gb/s, Vd = 7 V
43.0
Rise Time
Fall Time
Eye Width
12.5
42.5
12.0
42.0
11.5
41.5
11.0
41.0
10.5
40.5
10.0
40.0
5
6
7
8
9
10
Eye Width (ps)
Risetime (ps); Falltime (ps)
13.0
11
Vout (Vpp)
Ordering Information
Part
Package Style
TGA4943-SL
Land Grid Array, Surface Mount (RoHS)
14
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June 2009 © Rev A