Product Datasheet August 15, 2000 26- 34 GHz Medium Power Amplifier TGA1073A-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA Chip Dimensions 1.95 mm x 1.12 mm Primary Applications The TriQuint TGA1073A-SCC is a three stage MPA MMIC design using TriQuint’s proven 0.25 um Power pHEMT process. The TGA1073A is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS. The TGA1073A provides 25dBm nominal output power at 1dB compression across 26-34GHz. Typical small signal gain is 19 dB. Point-to-Point Radio • Point-to-Multipoint Communications • LMDS CPE PA 25 20 Gain and Return Loss (dB) The three stage design consists of a 200 um input device driving a 480um interstage device followed by an 800um output device. • S21 15 10 5 0 -5 S11 -10 -15 The TGA1073A requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. S22 -20 26 27 28 29 30 31 32 33 34 Frequency (GHz) 30 P1dB (dBm) 25 20 15 10 5 0 26 27 28 29 30 31 32 33 34 35 36 Frequency (GHz) TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 rev 11/10/98 Product Datasheet TGA1073A-SCC MAXIMUM RATINGS SYMBOL PARAMETER 5/ VALUE NOTES + POSITIVE SUPPLY VOLTAGE 8V + POSITIVE SUPPLY CURRENT 296 mA 1/ PIN INPUT CONTINUOUS WAVE POWER 23 dBm 4/ PD POWER DISSIPATION 2.37 W TCH OPERATING CHANNEL TEMPERATURE 150 0C TM MOUNTING TEMPERATURE (30 SECONDS) 320 0C V I TSTG 2/ 3/ -65 to 150 0C STORAGE TEMPERATURE 1/ Total current for all stages. 2/ These ratings apply to each individual FET. 3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4/ This value reflects an estimate. Actual value will be inserted as soon as it is determined. 5/ These ratings represent the maximum operable values for the device. DC SPECIFICATIONS (100%) (TA = 25 °C + 5 °C) NOTES SYMBOL TEST CONDITIONS 2/ LIMITS UNITS MIN MAX IMAX3 STD 300 516 mA IDSS3 STD 80 376 mA GM3 STD 176 424 mS 1/ |VP1| STD 0.5 1.5 V 1/ |VP2| STD 0.5 1.5 V 1/ |VP3| STD 0.5 1.5 V 1/ |VBVGD1| STD 11 30 V 1/ |VBVGS1| STD 11 30 V 1/ VP, VBVGD, and VBVGS are negative. 2/ The measurement conditions are subject to change at the manufacture’s discretion (with appropriate notification to the buyer). TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 rev 11/10/98 Product Datasheet TGA1073A-SCC RF SPECIFICATIONS (TA = 25°C + 5°C) NOTE 1/ 1/ 1/ 2/ 1/ 2/ TEST MEASUREMENT CONDITIONS 6V @ 220mA VALUE MIN TYP UNITS MAX SMALL-SIGNAL GAIN MAGNITUDE 26 – 33 GHz 17 19 dB POWER OUTPUT AT 1 dB GAIN COMPRESSION 27 GHz 22 24.5 dBm 28 – 33 GHz 23 INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE 26 – 33 GHz dBm -15 28 – 32 GHz dB -10 26 – 33 GHz dB -15 28 – 32 GHz dB -10 OUTPUT THIRD ORDER INTERCEPT dB 32 dBm RF probe data is taken at 0.5 GHz steps. Minimum output third-order-intercept (OTOI) is generally 6dB minimum above the 1dB compression point (P1dB). Calculations are based on standard two-tone testing with each tone approximately 10dB below the nominal P1dB. Factors that may affect OTOI performance include device bias, measurement frequency, operating temperature, output interface and output power level for each tone. RELIABILITY DATA PARAMETER RθJC Thermal resistance (channel to backside of c/p) BIAS CONDITIONS VD (V) ID (mA) 6 220 PDISS (W) 1.32 RθJC (C/W) 69.4 TCH (°C) 146.6 TM (HRS) 1.3 E6 Note: Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20mil CuMo Carrier at 55°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 rev 11/10/98 Product Datasheet TGA1073A-SCC TGA1073A - RF Probe Data Summary - S parameters and P1dB Vd=6V, Id=220mA, Ta=25C s11 s21 35 0 30 -5 InputReturn Loss (dB) 25 -10 5th 25th 50th 75th 95th -15 5th 20 25th 50th 75th 15 95th -20 10 -25 5 0 -30 26 27 28 29 30 31 32 26 33 27 28 29 30 31 32 33 Frequency (GHz) Frequency (GHz) s22 P1dB 0 40 -5 35 -10 30 -15 5th 25 5th 25th -20 50th 75th 25th 20 50th 75th 95th -25 95th 15 -30 10 -35 5 -40 26 27 28 29 30 Frequency (GHz) 31 32 33 0 28 30 31.5 Frequency (GHz) TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 rev 11/10/98 Product Datasheet TGA1073A-SCC Mechanical Characteristics (VG1) TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 rev 11/10/98 Product Datasheet TGA1073A-SCC Chip Assembly and Bonding Diagram Vd .01uF 100pF 100pF RFin RFout 100pF .01uF Vg TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 rev 11/10/98 Product Datasheet TGA1073A-SCC Reflow process assembly notes: •= •= •= •= •= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: •= •= •= •= •= •= •= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: •= •= •= •= •= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200ΓC GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 rev 11/10/98