WINGS WMBT3904

NPN EPITAXIAL SILICON TRANSISTORS
SOT—
—23
High Voltage Transistor
!
!
WMBT3904
Power Dissipation: 225mW
Collector Current: Max.
0.2A
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃
℃)
Limits
Characteristic
Symbol
Test Conditions
Units
MIN.
Collector-emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-off
Current
DC Current Gain
MAX.
BVCEO
IC=1mA
40
V
BVCBO
IC=100µA
60
V
BVEBO
IE=10µA
6.0
V
ICEX
VCE=30V, VBE=3V
hFE1
hFE2
hFE3
hFE4
hFE5
BVESAT1
BVESAT2
VCE(SAT)1
VCE(SAT)2
fT
VCE=1V, IC=100µA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA,IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10, VCE=20V f=100MHz
50
40
70
100
60
30
650
nA
300
850
mV
Base-Emitter
Saturation Voltage
950
mV
200
mV
Collector-Emitter
Saturation Voltage
200
mV
Transition Frequency
300
MHz
Collector-Base
COB
VCB=5V, f=1MHz
4
PF
Capacitance
NOTES: Due to probe testing limitations, only the DC parameters are tested.
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: [email protected]