NPN SILICON TRANSISTOR 9014 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50 ELECTRICAL CHARACTERISTICS Parameter 2.BASE 1 2 3 3.COLLECTOR Tamb=25 unless otherwise specified Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA Emitter-base breakdown voltage V(BR)EBO IE= 100 MIN TYP MAX UNIT 50 V IB=0 45 V A IC=0 5 V A IE=0 Collector cut-off current ICBO VCB=50 V, IE=0 0.1 A Collector cut-off current ICEO VCE=35 V, IB=0 0.1 A Emitter cut-off current IEBO VEB= 3 V 0.1 A VCE= 5 V, IC=0 DC current gain(note) HFE Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB= 5 mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 5mA 1 V VCE= 5 IC= 10mA fT Transition frequency 1 V, IC= 1mA 60 1000 150 MHz f =30MHz CLASSIFICATION OF HFE(1) Rank A B C D Range 60-150 100-300 200-600 400-1000 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected]