PZT3019 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. REF. A C D E I H 3 0 1 9 Date Code B C E ABSOLUTE MAXIMUM RATINGS Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 o Ta=25 C Symbol Parameter Value Units 140 V 80 V V A VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage Collector Current 1 2 IC PD TJ,Tstg REF. 7 Total Power Dissipation Junction and Storage Temperature -55~+150 W C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Cutoff Current Symbol BVCBO BVCEO BVEBO I CBO Emitter-Base Cutoff Current I EBO Collector Saturation Voltage VCE(sat) VBE(sat) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Min 140 80 7 50 90 hFE1 hFE2 hFE3 100 hFE4 hFE5 50 15 fT Cob 100 - Typ. - Max - Unit V V V 50 50 nA nA 0.2 V V 1.1 - VEB=5V I C=150mA,IB=15mA I C=150mA,IB=15mA VCE= 10 V, I C=0.1mA VCE= 10 V, I C=10mA VCE= 10 V, I C=150 mA 300 12 Test Conditions I C=100µA I C=30mA I E=100 µA VCB= 90V VCE= 10 V, I C=500mA VCE= 10 V, I C=1000mA MH z pF VCE= 50mV, IC= 50mA,f=100MHz VCB= 10 V , f=1MHz,IE=0 Any changing of specification will not be informed individual Page 1 of 1