NPN EPITAXIAL SILICON TRANSISTORS SOT— —23 High Voltage Transistor * Die Size 0.6X0.6mm * * Collector Current : Max 500mA * WMBTA92 Power Dissipation: 225mW 1. BASE 2. EMITTER Bonding Pad Size Emittoe 100*100mkm base 100*100mkm 3. COLLECTOR GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Test Conditions Limits Min Typ Max Characteristic Symbol Units Collector-emitter Breakdown Voltage VCEO IC=1.0mA 300 - - V Collector-Base Breakdown Voltage VCBO IC=100uA 300 - - V Emitter-Base Breakdown Voltage VEBO IE=10uA 5.0 - - V Collector Cut-off Current ICBO VCB=260V - - 100 nA Emitter Cut-off Current IEBO VEB=6V - - 100 nA DC Current Gain hFE VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA 30 40 40 - - Base-Emitter Saturation Voltage VBEsat IC=20mA, IB=2mA - - 0.90 V Collector-Emitter Saturation Voltage VCEsat IC=20mA, IB=2mA - - 0.35 V fr VCE=20V, IC=10mA,f=10MHz 50 - - MHz Ccb VCB=20V, f=1MHz - - 6.0 pF Transition Frequency Collector-Base Capacitance NOTES: Due to probe testing limitations, only the DC parameters are tested. Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected]