WINGS WMBTA42

NPN EPITAXIAL SILICON TRANSISTORS
WMBTA42
SOT—
—23
High Voltage Transistor
Die Size 0.6*0.6mm
Power Dissipation: 225mW
Collector Current: Max. 500mA
Bonding Pad Size
Emitoe 100*100mkm
Base 100*100mkm
*
*
1. BASE
*
*
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃)
Symbol
Collector-emitter
Breakdown Voltage
VCEO
IC=1.0mA
300
-
-
V
Collector-Base
Breakdown Voltage
VCBO
IC=100uA
300
-
-
V
Collector Cut-off
Current
ICBO
VCB=260V
-
-
100
nA
Emitter Cut-off
Current
IEBO
VEB=6V
-
-
100
nA
hFE
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
30
40
40
-
-
DC Current Gain
Test Conditions
Limits
Min Typ Max
Characteristic
Units
Base-Emitter
Saturation Voltage
VBEsat
IC=20mA, Ib=2mA
-
-
0.90
V
Collector-Emitter
Saturation Voltage
VCEsat
IC=20mA, IB=2mA
-
-
0.35
V
fr
VCE=20V,
IC=10mA,f=10MHz
50
-
-
MHz
Ccb
VCB=20V, f=1MHz
-
-
3.0
pF
Transition
Frequency
Collector-Base
Capacitance
NOTES: Due to probe testing limitations, only the DC parameters are tested.
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: [email protected]