DC COMPONENTS CO., LTD. 2N4403 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ Absolute Maximum Ratings(TA=25oC) Characteristic .500 Min (12.70) Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o -55 to +150 o Storage Temperature TSTG .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C C Dimensions in inches and (millimeters) Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -40 - - V Collector-Emitter Breakdown Voltage BVCEO -40 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA, IC=0 Collector Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width ICEX - - -0.1 µA VCE=-35V, VBE=-0.4V VCE(sat)1 - - -0.4 V IC=-150mA, IB=-15mA VCE(sat)2 - - -0.75 V IC=-500mA, IB=-50mA VBE(sat)1 -0.75 - -0.95 V IC=-150mA, IB=-15mA VBE(sat)2 - - -1.3 V IC=-500mA, IB=-50mA hFE1 30 - - - IC=-0.1mA, VCE=-1V hFE2 60 - - - IC=-1mA, VCE=-1V hFE3 100 - - - IC=-10mA, VCE=-1V hFE4 100 - 300 - IC=-150mA, VCE=-2V hFE5 20 - - - IC=-500mA, VCE=-2V fT 200 - - MHz - - 8.5 pF Cob 380µs, Duty Cycle Classification of hFE4 Rank A B Range 100~210 190~300 Test Conditions IC=-100µA, IE=0 2% IC=-20mA, VCE=-10V, f=100MHz VCE=-10V, IE=0, f=1MHz