DCCOM 2N4403

DC COMPONENTS CO., LTD.
2N4403
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and
amplifier applications.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Emitter
2 = Base
3 = Collector
o
2 Typ
.190(4.83)
.170(4.33)
o
2 Typ
Absolute Maximum Ratings(TA=25oC)
Characteristic
.500
Min
(12.70)
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-600
mA
Total Power Dissipation
PD
625
mW
Junction Temperature
TJ
+150
o
-55 to +150
o
Storage Temperature
TSTG
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
3 2 1
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
-40
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
-40
-
-
V
IC=-1mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
-5
-
-
V
IE=-10µA, IC=0
Collector Cutoff Current
(1)
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
ICEX
-
-
-0.1
µA
VCE=-35V, VBE=-0.4V
VCE(sat)1
-
-
-0.4
V
IC=-150mA, IB=-15mA
VCE(sat)2
-
-
-0.75
V
IC=-500mA, IB=-50mA
VBE(sat)1
-0.75
-
-0.95
V
IC=-150mA, IB=-15mA
VBE(sat)2
-
-
-1.3
V
IC=-500mA, IB=-50mA
hFE1
30
-
-
-
IC=-0.1mA, VCE=-1V
hFE2
60
-
-
-
IC=-1mA, VCE=-1V
hFE3
100
-
-
-
IC=-10mA, VCE=-1V
hFE4
100
-
300
-
IC=-150mA, VCE=-2V
hFE5
20
-
-
-
IC=-500mA, VCE=-2V
fT
200
-
-
MHz
-
-
8.5
pF
Cob
380µs, Duty Cycle
Classification of hFE4
Rank
A
B
Range
100~210
190~300
Test Conditions
IC=-100µA, IE=0
2%
IC=-20mA, VCE=-10V, f=100MHz
VCE=-10V, IE=0, f=1MHz