TI TPS22932BYFPT

TPS22932B
www.ti.com
SLVS802A – AUGUST 2009 – REVISED NOVEMBER 2009
LOW INPUT VOLTAGE, ULTRA-LOW rON LOAD SWITCH
WITH CONFIGURABLE ENABLE LOGIC AND CONTROLLED SLEW-RATE
Check for Samples: TPS22932B
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
1
•
•
•
•
•
•
•
•
Input Voltage: 1.1 V to 3.6 V
Ultra-Low ON Resistance
– rON = 55 mΩ at VIN = 3.6 V
– rON = 65 mΩ at VIN = 2.5 V
– rON = 75 mΩ at VIN = 1.8 V
– rON = 115 mΩ at VIN = 1.2 V
500-mA Maximum Continuous Switch Current
Quiescent Current < 1 μA
Shutdown Current < 1 μA
Low Control Threshold Allows Use of
1.2-V/1.8-V/2.5-V/3.3-V Logic
Configurable Enable Logic
Controlled Slew Rate to Avoid Inrush
Currents: 165 μs at 1.8 V
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
Six-Terminal Wafer-Chip-Scale Package
(WCSP)
– 0.8 mm × 1.2 mm,
0.4-mm Pitch, 0.5-mm Height
PDAs
Cell Phones
GPS Devices
MP3 Players
Digital Cameras
Peripheral Ports
Portable Instrumentation
DESCRIPTION
TPS22932B is a low rON load switch with controlled
turn on. It contains an ultra-low rON P-channel
MOSFET that can operate over an input voltage
range of 1.1 V to 3.6 V.
The switch is controlled by eight patterns of 3-bit
input. The user can choose the logic functions MUX,
AND, OR, NAND, NOR, inverter, and non-inverter. All
inputs can be connected to VIN or GND. The control
pins can be connected to low voltage GPIOs allowing
it to be controlled by whatever 1.2-V, 1.8-V, 2.5-V, or
3.3-V logic signals while keeping extremely low
quiescent current.
A 120-Ω on-chip load resistor is available for output
quick discharge when the switch is turned off. The
rise time (slew rate) of the device is internally
controlled to avoid inrush current: the rise time of
TPS22932B is 165 μs.
TPS22932B is available in a space-saving 6-terminal
WCSP (YFP with 0.4-mm pitch). The device is
characterized for operation over the free-air
temperature range of –40°C to 85°C.
(1)
DEVICE
rON AT 1.8 V
(TYP)
SLEW RATE
(TYP AT 3.3 V)
QUICK OUTPUT
DISCHARGE (1)
MAX OUTPUT
CURRENT
ENABLE
TPS22932B
75 mΩ
165 μs
Yes
500 mA
Active high
This feature discharges the output of the switch to ground through a 120-Ω resistor, preventing the output from floating.
YFP PACKAGE
Table 1. TERMINAL ASSIGNMENTS
C
C
C
ON2
ON3
B
B
B
ON1
GND
A
A
A
VIN
VOUT
2
1
2 1
Laser Marking View
1 2
Bump View
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TPS22932B
SLVS802A – AUGUST 2009 – REVISED NOVEMBER 2009
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ORDERING INFORMATION
TA
PACKAGE
–40°C to 85°C
(1)
(2)
(3)
(1) (2)
WCSP – YFP (0.4-mm pitch)
ORDERABLE PART NUMBER
Tape and reel
TPS22932BYFPR
TOP-SIDE MARKING
(3)
_ _ 48_
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
The actual top-side marking has two preceding characters to denote year, month, and sequence code, and one following character to
designate the wafer fab/assembly site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
TYPICAL APPLICATION
VBATT
VIN
SMPS
(see Note A)
LOAD
VOUT
ON1
CIN = 1 µF
CL
ON2
CL
ON3
GND
RL
TPS22932B
GND
GND
A.
Switched mode power supply
APPLICATION BLOCK DIAGRAM
VIN
A2
Turn-On Slew Rate
Controlled Driver
ON1
ON2
ON3
Y
B2
C2
Configurable
Logic
Control
Logic
C1
ESD Protection
A1
VOUT
Output Discharge
B2
GND
2
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SLVS802A – AUGUST 2009 – REVISED NOVEMBER 2009
Table 2. CONFIGURABLE LOGIC FUNCTION TABLE
INPUTS
SWITCH CONTROL
ON3
ON2
ON1
Y
L
L
L
OFF
L
L
H
OFF
L
H
L
ON
L
H
H
ON
H
L
L
OFF
H
L
H
ON
H
H
L
OFF
H
H
H
ON
TERMINAL FUNCTIONS
TERMINAL
NO.
NAME
A1
VOUT
A2
VIN
B1
B2, C2, C1
GND
DESCRIPTION
Switch output
Switch input, bypass this input with a ceramic capacitor to ground
Ground
ON1, ON2, ON3 Switch control input, active high - Do not leave floating
LOGIC DIAGRAM (POSITIVE LOGIC)
ON1
4
Y
ON2
ON3
Table 3. FUNCTION SELECTION TABLE
LOGIC FUNCTION
FIGURE NO.
2-to-1 data selector
Figure 1
2-input AND gate
Figure 2
2-input OR gate with one inverted input
Figure 3
2-input NAND gate with one inverted input
Figure 3
2-input AND gate with one inverted input
Figure 4
2-input NOR gate with one inverted input
Figure 4
2-input OR gate
Figure 5
Inverter
Figure 6
Noninverted buffer
Figure 7
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SLVS802A – AUGUST 2009 – REVISED NOVEMBER 2009
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LOGIC CONFIGURATIONS
ON3
ON2
A
GND
ON1
B
VOUT
VIN
A/B
A/B
GND
Y
A
B
Bump View
Figure 1. 2-to-1 Data Selector
A
GND
ON3
ON2
GND
ON1
VOUT
VIN
B
A
B
Y
Bump View
Figure 2. 2-Input AND Gate
A
GND
ON3
ON2
GND
ON1
VOUT
VIN
A
B
Y
B
A
B
VIN/VCC
Y
Bump View
Figure 3. 2-Input OR Gate With One Inverted Input
2-Input NAND Gate With One Inverted Input
A
GND
ON3
ON2
GND
ON1
VOUT
VIN
B
A
B
Y
A
B
Y
Bump View
Figure 4. 2-Input AND Gate With One Inverted Input
2-Input NOR Gate With One Inverted Input
A
GND
ON3
ON2
GND
ON1
VOUT
VIN
B
A
B
Y
VIN/VCC
Bump View
Figure 5. 2-Input OR Gate
4
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SLVS802A – AUGUST 2009 – REVISED NOVEMBER 2009
A
GND
ON3
ON2
GND
ON1
VOUT
VIN
A
Y
VIN/VCC
Bump View
Figure 6. Inverter
GND
ON3
ON2
GND
ON1
VOUT
VIN
A
A
Y
Bump View
Figure 7. Noninverted Buffer
ABSOLUTE MAXIMUM RATINGS (1)
MIN
MAX
–0.3
4
UNIT
V
VIN + 0.3
V
VIN
Input voltage range
VOUT
Output voltage range
P
Power dissipation at TA = 25°C
0.8
W
IMAX
Maximum continuous switch current
500
mA
TA
Operating free-air temperature range
–40
85
°C
Tstg
Storage temperature range
–65
150
°C
Tlead
Maximum lead temperature (10-s soldering time)
300
°C
ESD
(1)
Electrostatic discharge protection
Human-Body Model (HBM)
2000
Charged Device Model (CDM)
1000
V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
THERMAL IMPEDANCE RATINGS
Package thermal impedance (1)
θJA
(1)
YFP package
TYP
UNIT
155
°C/W
MAX
UNIT
500
mA
3.6
V
The package thermal impedance is calculated in accordance with JESD 51-7.
RECOMMENDED OPERATING CONDITIONS
MIN
IOUT
Output current
VIN
Input voltage range
VOUT
Output voltage range
CIN
Input capacitor
(1)
1.1
VIN
1 (1)
μF
See Application Information.
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TPS22932B
SLVS802A – AUGUST 2009 – REVISED NOVEMBER 2009
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ELECTRICAL CHARACTERISTICS
VIN = 1.1 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
VIN = 1.1 V
IIN
Quiescent current
IIN(OFF)
OFF-state supply current
IIN(LEAKAGE)
OFF-state switch current
IOUT = 0
VON = GND, OUT = Open
VON = GND, VOUT = 0
VIN = 1.8 V
275
500
920
VIN = 1.1 V
80
225
125
300
VIN = 3.6 V
340
650
VIN = 1.1 V
80
225
125
300
340
650
55
70
VIN = 1.8 V
VIN = 2.5 V
IOUT = –200 mA
140
860
VIN = 3.6 V
ON-state resistance
MAX
280
Full
Full
VIN = 3.6 V
rON
(1)
VIN = 3.6 V
VIN = 1.8 V
Full
TYP
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.1 V
rPD
Output pulldown resistance
VIN = 3.3 V, VON = 0, IOUT = 30 mA
ION
ON-state input leakage
current
VON = 1.1 V to 3.6 V or GND
VIN = 1.1 V to 3.6 V or GND
25°C
Full
UNIT
nA
nA
nA
85
25°C
65
Full
80
100
25°C
75
Full
90
110
25°C
115
Full
mΩ
130
155
25°C
135
Full
150
170
120
Ω
Full
1
μA
Full
1
μA
3.6
V
25°C
75
Control Inputs (ON1, ON2, ON3)
Input leakage current
VON
Control input voltage
VT+
Positive-going input voltage
threshold
VIN = 1.1 V to 1.8 V
VT–
Negative-going input voltage
threshold
VIN = 1.1 V to 1.8 V
ΔVT
Hysteresis (VT+ – VT–)
VIN = 1.1 V to 3.6 V
(1)
6
Full
VIN = 1.8 V to 3.6 V
VIN = 1.8 V to 3.6 V
Full
Full
Full
0.5
0.8
0.6
0.9
0.2
0.6
0.3
0.7
0.2
0.6
V
V
V
Typical values are at the specified VIN and TA = 25°C.
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SLVS802A – AUGUST 2009 – REVISED NOVEMBER 2009
SWITCHING CHARACTERISTICS
VIN = 1.2 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
tOFF
tr
Turn-ON time
Turn-OFF time
VOUT rise time
TEST CONDITIONS
RL = 500 Ω
RL = 500 Ω
RL = 500 Ω
MIN
350
CL = 1 μF
390
CL = 3 μF
450
CL = 0.1 μF
30
CL = 1 μF
70
CL = 3 μF
160
CL = 0.1 μF
240
CL = 1 μF
240
CL = 3 μF
260
CL = 0.1 μF
tf
VOUT fall time
RL = 500 Ω
TYP
CL = 0.1 μF
MAX
UNIT
μs
μs
μs
20
CL = 1 μF
150
CL = 3 μF
450
μs
SWITCHING CHARACTERISTICS
VIN = 1.5 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
Turn-ON time
TEST CONDITIONS
RL = 500 Ω
tr
Turn-OFF time
VOUT rise time
RL = 500 Ω
RL = 500 Ω
CL = 1 μF
320
CL = 3 μF
350
VOUT fall time
RL = 500 Ω
MAX
70
CL = 3 μF
150
CL = 0.1 μF
205
CL = 1 μF
205
CL = 3 μF
220
145
CL = 3 μF
445
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μs
μs
μs
18
CL = 1 μF
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UNIT
30
CL = 1 μF
CL = 0.1 μF
tf
TYP
290
CL = 0.1 μF
tOFF
MIN
CL = 0.1 μF
μs
7
TPS22932B
SLVS802A – AUGUST 2009 – REVISED NOVEMBER 2009
www.ti.com
SWITCHING CHARACTERISTICS
VIN = 1.8 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
tOFF
tr
TEST CONDITIONS
RL = 500 Ω
Turn-ON time
RL = 500 Ω
Turn-OFF time
VOUT rise time
RL = 500
MIN
215
CL = 1 μF
240
CL = 3 μF
260
CL = 0.1 μF
24
CL = 1 μF
60
CL = 3 μF
142
CL = 0.1 μF
165
CL = 1 μF
165
CL = 3 μF
175
CL = 0.1 μF
tf
RL = 500 Ω
VOUT fall time
TYP
CL = 0.1 μF
MAX
UNIT
μs
μs
μs
18
CL = 1 μF
145
CL = 3 μF
440
μs
SWITCHING CHARACTERISTICS
VIN = 2.5 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
Turn-ON time
TEST CONDITIONS
RL = 500 Ω
tr
Turn-OFF time
VOUT rise time
RL = 500 Ω
RL = 500 Ω
CL = 1 μF
205
CL = 3 μF
225
8
VOUT fall time
RL = 500 Ω
60
CL = 3 μF
140
CL = 0.1 μF
145
CL = 1 μF
150
CL = 3 μF
160
UNIT
μs
μs
μs
18
CL = 1 μF
147
CL = 3 μF
445
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MAX
2
CL = 1 μF
CL = 0.1 μF
tf
TYP
185
CL = 0.1 μF
tOFF
MIN
CL = 0.1 μF
μs
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SLVS802A – AUGUST 2009 – REVISED NOVEMBER 2009
SWITCHING CHARACTERISTICS
VIN = 3 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
Turn-ON time
TEST CONDITIONS
RL = 500 Ω
MIN
170
CL = 1 μF
190
CL = 3 μF
210
CL = 0.1 μF
tOFF
tr
Turn-OFF time
VOUT rise time
RL = 500 Ω
RL = 500 Ω
VOUT fall time
RL = 500 Ω
MAX
UNIT
μs
2
CL = 1 μF
60
CL = 3 μF
140
CL = 0.1 μF
140
CL = 1 μF
140
CL = 3 μF
150
CL = 0.1 μF
tf
TYP
CL = 0.1 μF
μs
μs
17
CL = 1 μF
148
CL = 3 μF
450
μs
SWITCHING CHARACTERISTICS
VIN = 3.3 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
Turn-ON time
TEST CONDITIONS
RL = 500 Ω
tr
Turn-OFF time
VOUT rise time
RL = 500 Ω
RL = 500 Ω
CL = 1 μF
175
CL = 3 μF
195
VOUT fall time
RL = 500 Ω
MAX
55
CL = 3 μF
135
CL = 0.1 μF
135
CL = 1 μF
135
CL = 3 μF
145
148
CL = 3 μF
450
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μs
μs
μs
17
CL = 1 μF
Copyright © 2009, Texas Instruments Incorporated
UNIT
20
CL = 1 μF
CL = 0.1 μF
tf
TYP
160
CL = 0.1 μF
tOFF
MIN
CL = 0.1 μF
μs
9
TPS22932B
SLVS802A – AUGUST 2009 – REVISED NOVEMBER 2009
www.ti.com
TYPICAL CHARACTERISTICS
0.6
ON-State Resistance, rON (Ω)
0.5
0.4
0.3
0.2
0.1
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
Input Voltage, VIN (V)
Figure 8. rON vs VIN
0.070
VIN = 1.1 V
0.07
VIN = 1.2 V
0.06
VIN = 1.8 V
V Drop (V)
0.05
VIN = 2.5 V
0.04
VIN = 3.6 V
0.03
0.02
0.01
0.00
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
ON-State Resistance, R on (ohms)
0.08
0.065
0.060
0.055
0.050
0.045
0.040
-40
10
35
60
85
Tem perature (°C)
ILoad (A)
Figure 9. Voltage Drop vs Load Current
10
-15
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Figure 10. rON vs TA (VIN = 3.3 V)
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TYPICAL CHARACTERISTICS (continued)
250
Quiescent Current, IIN (nA)
Quiescent Current, IIN (nA)
250
200
150
100
50
0
200
150
100
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
–40
Input Voltage, VIN (V)
25
85
Temperature (°C)
Figure 11. Quiescent Current vs VIN
(ON2 = VIN, ON1–ON3 = 0 V, Iout= 0)
Figure 12. Quiescent Current vs TA
(VIN = 3.3 V, ON2 = VIN, ON1–ON3 = 0 V, Iout = 0)
100
250
80
IN(OFF) Current, (nA)
IIN(OFF) Current (nA)
90
70
60
50
40
30
20
200
150
100
50
10
0
0.5
0
1.0
1.5
2.0
2.5
3.0
Input Voltage, VIN (V)
3.5
4.0
–40
25
85
Temperature (°C)
Figure 13. IIN(OFF) vs VIN
(ON1–ON2–ON3 = 0 V)
Figure 14. IIN(OFF) vs Temperature
(VIN = 3.3 V, ON1–ON2–ON3 = 0 V)
100
250
80
IIN(Leakage) Current (nA)
IIN(Leakage) Current, (nA)
90
70
60
50
40
30
20
200
150
100
50
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
–40
Input Voltage, VIN (V)
Figure 15. IIN(Leakage) vs VIN
(ON1–ON2–ON3 = 0 V, Vout = 0)
25
85
Temperature (°C)
Figure 16. IIN(Leakage) vs Temperature
(VIN = 3.3 V, ON1–ON2–ON3 = 0 V)
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TYPICAL CHARACTERISTICS (continued)
4.0
VIN = 3.6 V
3.5
VIN = 3.3 V
3.0
VIN = 3 V
Vout (V)
2.5
VIN = 2.5 V
2.0
VIN = 1.8 V
VIN = 1.5 V
VIN = 1.2 V
1.5
1.0
VIN = 1.1 V
0.5
0.0
–0.5
0.2
0.3
0.4 0.5 0.6 0.7 0.8
Input Voltage, VON (V)
Figure 17. ON-Input Threshold
200
160
180
140
160
0.9
1.0
120
trise
tON
120
trise/tfall (µs)
CL = 0.1 µF
RL = 500 Ω
VIN = 3.3 V
100
80
60
100
60
tfall
40
tOFF
40
CL = 0.1 µF
RL = 500 Ω
VIN = 3.3 V
80
20
20
0
0
–4
0
–3
0
–2
0
–1
0
0
10
20
30
40
50
60
70
80
90
10
0
–5
Temperature (°C)
Temperature (°C)
Figure 18. tON/tOFF vs Temperature
Figure 19. trise/tfall vs Temperature
Time (µs)
120
40
0
–50
0
0
80
80
0
0
0
30
20
10
0
0.0
–0.5
70
0.4
0
CL = 0.1 µF
RL = 10 Ω
VIN = 3.3 V
0.8
Figure 20. tON Response
12
160
VON
60
1.2
50
1.6
Output Current (mA)
200
0
0
0
80
0
0
50
0
40
30
0
20
0
0
10
00
–1
–2
00
0.0
–0.5
70
0.4
0
CL = 3 µF
RL = 500 Ω
VIN = 3.3 V
0.8
2.0
00
1.2
280
240
–1
1.6
VON
IOUT
2.4
00
2.0
350
320
2.8
–2
2.4
Control Input Voltage (V)
IOUT
60
Control Input Voltage (V)
2.8
3.5
3.2
Output Current (mA)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
3.5
3.2
0
0
0
0
10
20
30
40
50
60
70
80
90
10
0
–1
–2
–3
0
0
–4
–5
0
0
40
tON/tOFF (µs)
140
Time (µs)
Figure 21. tON Response
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TYPICAL CHARACTERISTICS (continued)
2.0
1.2
240
2.0
1.6
200
VON
0
160
1.2
120
CL = 3 µF
RL = 10 Ω
VIN = 3.3 V
0.8
0.4
0.0
–0.5
–1.0 –0.5
80
0
Time (µs)
Figure 22. tON Response
2.4
2.0
1.6
VON
1.2
IOUT
0.8
0.4
140
120
2.8
IOUT
2.4
80
1.6
00
16
00
60
VON
40
1.2
0.4
0
2.0
1.6
VON
1.2
IOUT
0.8
0.4
00
00
16
00
14
00
12
10
0
0
80
0
60
0
40
0
20
00
–2
–4
00
0.0
–0.5
Time (µs)
–10
–20
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Time (ms)
3.5
3.2
140
120
2.8
Control Input Voltage (V)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
Output Current (mA)
Control Input Voltage (V)
2.4
0
Figure 25. tON Response
CL = 3 µF
RL = 500 Ω
VIN = 1.2 V
2.8
20
CL = 0.1 µF
RL = 10 Ω
VIN = 1.2 V
0.8
Figure 24. tON Response
3.5
3.2
100
2.0
0.0
–0.5
–1.0 –0.5
14
00
12
00
10
0
0
80
60
0
40
0
0
20
00
–2
–4
00
0.0
–0.5
Time (µs)
0.0
–50
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Time (ms)
3.5
3.2
Control Input Voltage (V)
Control Input Voltage (V)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
CL = 0.1 µF
RL = 500 Ω
VIN = 1.2 V
2.8
40
Figure 23. tON Response
Output Current (mA)
3.5
3.2
80
Output Current (mA)
0
0
0
40
0
30
0
0
20
0
10
00
–1
–2
00
0.0
–0.5
60
0.4
70
0
CL = 3 µF
RL = 500 Ω
VIN = 3.3 V
0.8
2.4
280
IOUT
2.4
100
80
2.0
1.6
60
VON
40
1.2
CL = 3 µF
RL = 10 Ω
VIN = 1.2 V
0.8
0.4
0.0
–0.5
–1.0 –0.5
Figure 26. tON Response
0
20
Output Current (mA)
1.6
VON
IOUT
Output Current (mA)
2.4
350
320
2.8
Control Input Voltage (V)
IOUT
50
Control Input Voltage (V)
2.8
3.5
3.2
Output Current (mA)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
3.5
3.2
0
–10
–20
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Time (ms)
Figure 27. tON Response
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10
20
30 40 50
Time (µs)
60
70
80
VON
0
10
60
70
80
10.0
9.0
8.0
7.0
6.0
5.0
IOUT
4.0
3.0
2.0
1.0
0.0
VON
–1.0
–2.0
–1.0
–3.0
–1.5
–4.0
–2.0
–5.0
–2.5
–6.0
–3.0
–200 0 200 400 600 800 1.0 1.2 1.4 1.6 1.8
Time (µs)
500
450
400
350
300
IOUT
250
200
150
100
50
0.0
VON
–50
–100
–1.0
–150
–1.5
–200
–2.0
–250
–2.5
–300
–3.0
–50 0 50 100 150 200 250 300 350 400 450
Time (µs)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
CL = 3 µF
RL = 500 Ω
VIN = 3.3 V
Control Input Voltage (V)
Figure 29. tOFF Response
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
CL = 3 µF
RL = 11 Ω
VIN = 3.3 V
CL = 0.1 µF
RL = 500 Ω
VIN = 1.2 V
IOUT
VON
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
–1.0
–1.0
–1.5
–2.0
–2.5
–3.0
–10
–1.5
–2.0
–2.5
–3.0
0
10
20
30 40 50
Time (µs)
60
70
80
90
Control Input Voltage (V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
Figure 31. tOFF Response
Output Current (mA)
Control Input Voltage (V)
30 40 50
Time (µs)
Figure 28. tOFF Response
Figure 30. tOFF Response
250
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
CL = 0.1 µF
RL = 11 Ω
VIN = 1.2 V
IOUT
VON
–1.0
–1.5
–2.0
–2.5
–3.0
–10
0
Figure 32. tOFF Response
14
20
Output Current (mA)
IOUT
–1.0
–1.5
–2.0
–2.5
–3.0
–10
500
450
400
350
300
250
200
150
100
50
0.0
–50
–100
–150
–200
–250
–300
90
CL = 0.1 µF
RL = 11 Ω
VIN = 3.3 V
10
20
30 40 50
Time (µs)
60
70
80
220
200
180
160
140
120
100
80
60
40
20
0.0
–20
–40
–60
–80
–100
–120
Output Current (mA)
0
–3.0
–4.0
–5.0
–6.0
90
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
Output Current (mA)
–2.0
Control Input Voltage (V)
VON
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
–1.0
Output Current (mA)
IOUT
–1.0
–1.5
–2.0
–2.5
–3.0
–10
Control Input Voltage (V)
CL = 0.1 µF
RL = 500 Ω
VIN = 3.3 V
Output Current (mA)
Control Input Voltage (V)
TYPICAL CHARACTERISTICS (continued)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
–150
90
Figure 33. tOFF Response
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VON
–1.0
–1.5
–2.0
–2.5
–3.0
–200 0
–1.0
–1.5
–2.0
–2.5
–3.0
200 400 600 800 1.0 1.2 1.4 1.6 1.8
Time (µs)
250
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
CL = 3 µF
RL = 11 Ω
VIN = 1.2 V
IOUT
VON
–1.0
–1.5
–2.0
–2.5
–3.0
–50
0
Figure 34. tOFF Response
220
200
180
160
140
120
100
80
60
40
20
0.0
–20
–40
–60
–80
–100
–120
Output Current (mA)
IOUT
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
Control Input Voltage (V)
CL = 3 µF
RL = 500 Ω
VIN = 1.2 V
Output Current (mA)
Control Input Voltage (V)
TYPICAL CHARACTERISTICS (continued)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
–150
50 100 150 200 250 300 350 400 450
Time (µs)
Figure 35. tOFF Response
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PARAMETER MEASUREMENT INFORMATION
VIN
ON
VOUT
(A)
RL
CL
+
–
OFF
DUT
CIN =1 µF
GND
GND
GND
TEST CIRCUIT
1.8 V
VON
VON
VON/2
VON/2
tr
0V
tON
tOFF
VIN/2
VIN/2
90%
VOUT
VOH
VOUT
tf
0V
10%
90%
10%
VOL
tON/tOFF WAVEFORMS
A.
trise and tfall of the control signal is 100 ns.
Figure 36. Test Circuit and tON/tOFF Waveforms
16
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APPLICATION INFORMATION
ON/OFF Control
The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state so long
as there is no fault. ON is active HI and has a low threshold making it capable of interfacing with low voltage
signals. The ON pin is compatible with standard GPIO logic threshold. It can be used with any microcontroller
with 1.2-V, 1.8-V, 2.5-V or 3.3-V GPIOs.
Input Capacitor
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor must be placed between VIN and GND . A 1-μF ceramic
capacitor, CIN, placed close to the pins is usually sufficient. Higher values of CIN can be used to further reduce
the voltage drop during higher current application. When switching a heavy load, it is recommended to have an
input capacitor about 10 or more times higher than the output capacitor in order to avoid any supply drop.
Output Capacitor
Due to the integral body diode in the PMOS switch, a CIN greater than CL is highly recommended. A CL greater
than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow
through the body diode from VOUT to VIN.
Board Layout
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND will help minimize the parasitic
electrical effects along with minimizing the case to ambient thermal impedance.
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PACKAGE OPTION ADDENDUM
www.ti.com
9-Nov-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS22932BYFPR
PREVIEW
DSBGA
YFP
6
3000
TBD
Call TI
Call TI
TPS22932BYFPT
PREVIEW
DSBGA
YFP
6
250
TBD
Call TI
Call TI
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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