TI TPS22960DCNR

TPS22960
www.ti.com ..................................................................................................................................................................................................... SLVS914 – APRIL 2009
LOW INPUT VOLTAGE, DUAL LOAD SWITCH WITH CONTROLLED TURN-ON
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
DCN PACKAGE
(TOP VIEW)
VIN1
1
8
VOUT1
ON1
2
7
SR
ON2
3
6
GND
VIN2
4
5
VOUT2
RSE PACKAGE
(TOP VIEW)
VIN2
DESCRIPTION
VIN1
1
8
ON1
2
SR
The TPS22960 is a small low-rON dual load switch
with controlled turn on. The devices contain two
P-channel MOSFETs that can operate over an input
voltage range of 1.62 V to 5.5 V. Each switch is
controlled by an on/off input (ON1 and ON2), which is
capable of interfacing directly with low-voltage control
signals. In TPS22960 a 85-Ω on-chip load resistor is
added for output quick discharge when switch is
turned off.
7
ON2
6
GND
4
5
VOUT2
W
•
•
GPS Devices
Cell Phones/PDAs
MP3 Players
Digital Cameras
EV
IE
•
•
•
Integrated Dual Load Switch
Input Voltage Range: 1.62 V to 5.5 V
Low ON-State Resistance
– rON = 342 mΩ at VIN = 5.5 V
– rON = 435 mΩ at VIN = 3.3 V
– rON = 523 mΩ at VIN = 2.6 V
– rON = 714 mΩ at VIN = 1.8 V
500-mA Maximum Continuous Switch Current
Low Quiescent Current and Shutdown Current
Controlled Switch Output Rise Time: 75 µs or
660 µs
Integrated Quick Output Discharge Transistor
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
8-Pin SOT (DCN) Package: 3 mm × 3 mm
8-Pin µQFN (RSE) Package: 1.5 mm × 1.5 mm
PR
1
3
VOUT1
The rise time (slew-rate) of the device is internally
controlled in order to avoid inrush current and can be
slowed down if needed using the SR pin: TPS22960
feature a 75 µs rise time with the SR pin tied to
ground and 660 µs with the SR pin tied to high.
The TPS22960 is available in a space-saving 8-pin
µQFN package and in an 8-pin SOT package. It is
characterized for operation over the free-air
temperature range of –40°C to 85°C.
(1)
DEVICE
rON AT 3.3 V
(TYP)
SLEW RATE AT 3.3 V
(TYP)
QUICK OUTPUT
DISCHARGE (1)
MAX OUTPUT
CURRENT
ENABLE
TPS22960
435 mΩ
75 µs with SR = low
660 µs with SR = high
Yes
500 mA
Active High
This feature discharges the output of the switch to ground through a 85-Ω resistor, preventing the output from floating.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TPS22960
SLVS914 – APRIL 2009 ..................................................................................................................................................................................................... www.ti.com
ORDERING INFORMATION
TA
–40°C to 85°C
(1)
(2)
(3)
PACKAGE
(1) (2)
TOP-SIDE MARKING (3)
ORDERABLE PART NUMBER
µQFN – RSE
Tape and reel
TPS22960RSER
PREVIEW
SOT – DCN
Tape and reel
TPS22960DCNR
NFR_
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
DCN: The actual top-side marking has one additional character that designates the wafer fab/assembly site.
TYPICAL APPLICATION
ON1
VIN1
CL
RL
Load 1
1 µF
CL
RL
Load 2
VOUT1
SR
VIN2
VOUT2
1 µF
ON2
APPLICATION BLOCK DIAGRAM
VIN1
ON1
SR
Control
Logic
ON2
VOUT1
Output discharge
GND
Output discharge
VOUT2
VIN2
2
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CONFIGURABLE LOGIC FUNCTION TABLE
ONx
VINx TO VOUTx
L
OFF
VOUTx TO GND
ON
H
ON
GND
TERMINAL FUNCTIONS
TERMINAL
DESCRIPTION
DCN
PIN NO.
RSE
PIN NO.
1
1
VIN1
Switch 1 input; bypass this input with a ceramic capacitor to GND
2
2
ON1
Switch 1 control input, active high. Do not leave floating.
3
7
ON2
Switch 2 control input, active high. Do not leave floating.
4
8
VIN2
Switch 2 input; bypass this input with a ceramic capacitor to GND
5
5
VOUT2
Switch 2 output
6
6
GND
Ground
7
3
SR
8
4
VOUT1
NAME
Slew rate control pin. SR = GND translates into a 75-µs rise time; SR = high translates into a
660-µs rise time
Switch 1 output
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ABSOLUTE MAXIMUM RATINGS (1)
MIN
UNIT
VIN
Input voltage range
VOUT
Output voltage range
VON
Input voltage range
IMAX
Maximum continuous switch current
0.5
A
TA
Operating free-air temperature range
–40
85
°C
Tstg
Storage temperature range
–65
150
°C
Tlead
Maximum lead temperature (10-s soldering time)
300
°C
ESD
(1)
–0.3
MAX
–0.3
Electrostatic discharge protection
6
V
VIN + 0.3
V
6
V
Human-Body Model (HBM)
2000
Charged-Device Model (CDM)
1000
V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATINGS
BOARD
PACKAGE
RθJC
RθJA
DERATING
FACTOR ABOVE
TA = 25°C
TA < 25°C
TA = 70°C
TA = 85°C
High-K (1)
DCN
123°C/W
220°C/W
-4.545 mW/°C
454.5 mW
250 mW
181.1 mW
(1)
RSE
183°C/W
253°C/W
-3.952 mW/°C
395.2 mW
217.3 mW
158.1 mW
High-K
(1)
The JEDEC High-K (2s2p) board used to derive this data was a 3 × 3 inch, multilayer board with 1-ounce internal power and ground
planes and 2-ounce copper traces on top and bottom of the board
RECOMMENDED OPERATING CONDITIONS
VIN
Input voltage range
VOUT
Output voltage range
VIH
High-level input voltage: ON1, ON2, SR
VIL
Low-level input voltage: ON1, ON2, SR
CIN
Input capacitor
(1)
4
MIN
MAX
1.62
5.5
V
VIN
V
VINx = 3.0 V to 5.5 V
1.5
5.5
VINx = 1.62 V to 3.0 V
1.4
5.5
VINx = 3.0 V to 5.5 V
0.5
VINx = 1.62 V to 3.0 V
0.4
1 (1)
UNIT
V
V
µF
See Application Information
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ELECTRICAL CHARACTERISTICS
VIN = 1.62 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Quiescent current
(each switch)
IIN
IIN(OFF)
OFF-state supply
current (each switch)
TA
MIN TYP (1)
MAX
VINx = 5.5 V
Full
0.64
2
VINx = 3.3 V
Full
0.35
1.2
VINx = 2.5 V
Full
0.24
0.8
VINx = 1.8 V
Full
0.15
0.5
VINx = 5.5 V
Full
0.47
3.6
VINx = 3.3 V
Full
0.25
1.8
VINx = 2.5 V
Full
0.18
1.3
VINx = 1.8 V
Full
0.11
0.9
25°C
342
400
TEST CONDITIONS
IOUTx = 0, VINx = VON
VON = GND, VOUTx = Open
VINx = 5.5 V
VINx = 3.3 V
rON
ON-state resistance
(each switch)
IOUT = –200 mA
VINx = 2.5 V
VINx = 1.8 V
VINx = 1.62 V
rPD
Output pulldown
resistance
VIN = 3.3 V, VON = 0, IOUT = 30 mA
ION
ON-state input leakage
current
VON = 1.62 V to 5.5 V or GND
(1)
Full
25°C
523
714
620
mΩ
855
995
830
Full
25°C
500
720
Full
25°C
µA
595
Full
25°C
µA
465
435
Full
25°C
UNIT
950
1100
85
Full
120
Ω
0.25
µA
MAX
UNIT
Typical values are at TA = 25°C.
SWITCHING CHARACTERISTICS
VIN = 3.3 V, TA = 25°C, RL_CHIP = 85 Ω (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tON
Turn-ON time
RL = 33 Ω, CL = 0.1 µF
tOFF
Turn-OFF time
RL = 33 Ω, CL = 0.1 µF
tr
VOUT rise time
RL = 33 Ω, CL = 0.1 µF
tf
VOUT fall time
RL = 33 Ω, CL = 0.1 µF
(1)
SR = VIN
MIN TYP (1)
635
SR = GND
67
SR = VIN
4.5
SR = GND
4.2
SR = VIN
660
SR = GND
75
SR = VIN
4.5
SR = GND
4.5
µs
µs
µs
µs
Typical values are at the specified VIN = 3.3 V and TA = 25°C
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TYPICAL CHARACTERISTICS
ON RESISTANCE
vs
INPUT VOLTAGE
ON RESISTANCE
vs
TEMPERATURE
900
1100
1000
TA = 85°C
800
TA = 25°C
700
VIN = 1.8 V
Resitance (mxW )
800
Resistance (m W )
900
700
TA = -40°C
600
500
400
600
VIN = 2.5 V
500
VIN = 3.3 V
400
300
VIN = 5.5 V
200
300
100
200
-50
0
0
1
2
3
VIN (V)
4
5
6
-25
0
25
50
Figure 1.
Temperature (°C)
Figure 2.
QUIESCENT CURRENT
vs
TEMPERATURE
QUIESCENT CURRENT
vs
INPUT VOLTAGE
0.7
75
100
5
6
1
VIN = 3.3 V
SR = High
SR = High
0.9
0.6
0.8
0.7
0.6
0.4
IIN (µA)
IIN (µA)
0.5
IIN
0.3
0.5
0.4
IIN (Off)
TA = 85°C
0.3
0.2
0.2
IIN (Leakage)
0.1
TA = 25°C
0.1
0
-50
0
-25
0
25
50
75
100
0
1
2
3
4
VIN (V)
Temperature (°C)
Figure 3.
6
TA = -40°C
Figure 4.
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TYPICAL CHARACTERISTICS (continued)
RISE TIME
vs
INPUT VOLTAGE
<br/>
<br/>
ON THRESHOLD
1400
6.0
VIN = 5.5 V
5.0
VIN = 5.0 V
1300
VIN = 4.5 V
1200
TA = 25°C
4.5
TA = 85°C
4.0
VIN = 3.3 V
1100
VIN = 3.6 V
3.5
1000
t R (µs)
VOUT (V)
SR High
TA = -40°C
5.5
3.0
VIN = 3.0 V
2.5
VIN = 2.5 V
800
2.0
VIN = 1.8 V
1.5
900
700
1.0
600
0.5
500
0.0
-0.5
400
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
2
3
4
VON (V)
VIN (V)
Figure 5.
Figure 6.
RISE TIME
vs
INPUT VOLTAGE
FALL TIME
vs
INPUT VOLTAGE
160
5
6
5
6
5.0
SR Low
TA = -40°C
145
SR = High or Low
4.5
TA = 25°C
130
TA = 85°C
4.0
3.5
t F (µs)
t R (µs)
115
100
3.0
85
2.5
70
2.0
55
1.5
40
1.0
1
2
3
4
5
6
1
2
3
4
VIN (V)
VIN (V)
Figure 7.
Figure 8.
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TYPICAL CHARACTERISTICS (continued)
RISE TIME
vs
TEMPERATURE
ON TIME
vs
INPUT VOLTAGE
1400
700
SR High
600
1200
500
1000
400
800
t ON (µs)
t R (µs)
SR High
300
200
100
600
400
SR Low
0
-50
SR Low
200
0
-25
0
25
50
75
100
1
2
3
4
5
6
VIN (V)
Temperature (°C)
Figure 9.
Figure 10.
OFF TIME
vs
INPUT VOLTAGE
9
8
7
t OFF (µs)
6
5
SR Low
4
SR High
3
2
1
1
2
3
4
5
6
VIN (V)
Figure 11.
8
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TYPICAL CHARACTERISTICS (continued)
CLoad = 0.1 µF
IOUT = 100 mA
V IN = 1.8 V
SR = High
V ON
500 mV/div
IOUT
20 mA/div
1 ms/div
Figure 12. tON Response
CLoad = 10 µF
IOUT = 100 mA
V IN = 1.8 V
SR = High
V ON
500 mV/div
IOUT
20 mA/div
1 ms/div
Figure 13. tON Response
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TYPICAL CHARACTERISTICS (continued)
CLoad = 0.1 µF
IOUT = 100 mA
V IN = 5.5 V
SR = High
V ON
500 mV/div
IOUT
20 mA/div
500 µs/div
Figure 14. tON Response
CLoad = 10 µF
IOUT = 100 mA
V IN = 5.5 V
SR = High
V ON
500 mV/div
IOUT
20mA/div
500 µs/div
Figure 15. tON Response
10
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TYPICAL CHARACTERISTICS (continued)
CLoad = 0.1 µF
IOUT = 100 mA
V IN = 1.8 V
SR = High
I OUT
20 mA/div
V ON
500 mV/div
5 µs/div
Figure 16. tOFF Response
IOUT
20 mA/div
C Load = 10 µF
I OUT = 100 mA
V IN = 1.8 V
SR = High
VON
500 mV/div
100 µs/div
Figure 17. tOFF Response
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TYPICAL CHARACTERISTICS (continued)
CLoad = 0.1 µF
IOUT = 100 mA
V IN = 5.5 V
SR = High
IOUT
20 mA/div
VON
500 mV/div
5 µs/div
Figure 18. tOFF Response
CLoad = 10 µF
I OUT = 100 mA
V IN = 5.5 V
SR = High
IOUT
20 mA/div
VON
500 mV/div
200 µs/div
Figure 19. tOFF Response
12
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TYPICAL CHARACTERISTICS (continued)
CLoad = 0.1 µF
IOUT = 100 mA
VIN = 1.8 V
SR = Low
VON
500 mV/div
IOUT
20 mA/div
100 µs/div
Figure 20. tON Response
CLoad = 10 µF
IOUT = 100 mA
VIN = 1.8 V
SR = Low
V ON
500 mV/div
I OUT
20 mA/div
500 µs/div
Figure 21. tON Response
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TYPICAL CHARACTERISTICS (continued)
CLoad = 0.1 µF
IOUT = 100 mA
VIN = 5.5 V
SR = Low
VON
500 mV/div
IOUT
20 mA/div
50 µs/div
Figure 22. tON Response
CLoad = 10 µF
I OUT = 100 mA
V IN = 5.5 V
SR = Low
VON
500 mV/div
IOUT
20 mA/div
500 µs/div
Figure 23. tON Response
14
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TYPICAL CHARACTERISTICS (continued)
CLoad = 0.1 µF
I OUT = 100 mA
V IN = 1.8 V
SR = Low
IOUT
20 mA/div
VON
500 mV/div
5 µs/div
Figure 24. tOFF Response
CLoad = 10 µF
I OUT = 100 mA
V IN = 1.8 V
SR = Low
IOUT
20 mA/div
VON
500 mV/div
200 µs/div
Figure 25. tOFF Response
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TYPICAL CHARACTERISTICS (continued)
CLoad = 0.1 µF
I OUT = 100 mA
V IN = 5.5 V
SR = Low
IOUT
20 mA/div
VON
500 mV/div
5 µs/div
Figure 26. tOFF Response
CLoad = 10 µF
I OUT = 100 mA
V IN = 5.5 V
SR = Low
IOUT
20 mA/div
VON
500 mV/div
200 µs/div
Figure 27. tOFF Response
16
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PARAMETER MEASUREMENT INFORMATION
VIN
ON
+
–
VOUT
(A)
OFF
CIN =1 µF
GND
RL
CL
TPS22960
GND
GND
TEST CIRCUIT
1.8 V
VON
VON
VON/2
VON/2
tr
0V
tON
tOFF
VOUT/2
VOUT/2
90%
VOUT
VOH
VOUT
tf
0V
10%
90%
10%
VOL
tON/tOFF WAVEFORMS
A.
trise and tfall of the control signal is 100 ns.
Figure 28. Test Circuit and tON/tOFF Waveforms
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APPLICATION INFORMATION
ON/OFF Control
The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state so long
as there is no fault. ON is active HI and has a low threshold making it capable of interfacing with low voltage
signals. The ON pin is compatible with standard GPIO logic threshold. It can be used with any microcontroller
with 1.2-V, 1.8-V, 2.5-V, or 3.3-V GPIOs.
Input Capacitor
To limit voltage drop or voltage transients, a capacitor needs to be placed between VIN and GND. A 1-µF ceramic
capacitor, CIN, placed close to the pins is usually sufficient, but higher values of CIN can be used. When switching
heavy loads, it is recommended to have an input capacitor about ten times higher than the output capacitor.
Output Capacitor
Due to the integral body diode in the PMOS switch, a CIN greater than CL is highly recommended. A CL greater
than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow
through the body diode from VOUT to VIN.
Board Layout
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND will help minimize the parasitic
electrical effects along with minimizing the case to ambient thermal impedance.
18
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PACKAGE OPTION ADDENDUM
www.ti.com
19-May-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
TPS22960DCNR
ACTIVE
SOT-23
DCN
Pins Package Eco Plan (2)
Qty
8
3000 Green (RoHS &
no Sb/Br)
Lead/Ball Finish
CU NIPDAU
MSL Peak Temp (3)
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
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Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Apr-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TPS22960DCNR
Package Package Pins
Type Drawing
SPQ
SOT-23
3000
DCN
8
Reel
Reel
Diameter Width
(mm) W1 (mm)
180.0
9.2
Pack Materials-Page 1
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
3.23
3.17
1.37
4.0
W
Pin1
(mm) Quadrant
8.0
Q3
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Apr-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS22960DCNR
SOT-23
DCN
8
3000
202.0
201.0
28.0
Pack Materials-Page 2
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