TI TPS22924C

TPS22924C
www.ti.com
SLVSA52 – NOVEMBER 2009
ULTRA-SMALL, LOW-INPUT-VOLTAGE, LOW rON LOAD SWITCH
Check for Samples: TPS22924C
FEATURES
1
•
•
•
•
•
•
•
•
•
•
Integrated Single Load Switch
Input Voltage: 0.75 V to 3.6 V
Ultra-Low ON Resistance
– rDS(ON) = 5.7 mΩ at VIN = 3.6 V
– rDS(ON) = 5.8 mΩ at VIN = 2.5 V
– rDS(ON) = 5.9 mΩ at VIN = 1.8 V
– rDS(ON) = 6 mΩ at VIN = 1.2 V
– rDS(ON) = 8 mΩ at VIN = 0.75 V
Ultra Small CSP-6 package
0.9 mm x 1.4 mm, 0.5-mm Pitch
2-A Maximum Continuous Switch Current
Low Shutdown Current
Low Threshold Control Input
Controlled Slew Rate to Avoid Inrush Currents
Quick Output Discharge Transistor
ESD Performance Tested Per JESD 22
– 5000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
DESCRIPTION
The TPS22924C is a small, ultra-low rON load switch
with controlled turn on. The devices contain
N-channel MOSFETs that can operate over an input
voltage range of 0.75 V to 3.6 V. An integrated
charge pump biases the NMOS switch to achieve a
minimum switch ON resistance. The switch is
controlled by an on/off input (ON), which is capable of
interfacing directly with low-voltage control signals.
A 1250-Ω on-chip load resistor
quick discharge when switch is
time of the device is internally
inrush current. The TPS22924C
of 800 µs at 3.6 V.
The TPS22924C is available in an ultra-small
space-saving
6-pin
CSP
package
and
is
characterized for operation over the free-air
temperature range of –40ºC to 85ºC.
TYPICAL APPLICATION
VIN
SMPS
ON
CIN = 1 µF
CL
VOUT
LOAD
TPS22924C
CL
RL
OFF
APPLICATIONS
•
•
•
•
•
•
•
•
•
is added for output
turned off. The rise
controlled to avoid
features a rise time
GND
GND
GND
Battery Powered Equipment
Portable Industrial Equipment
Portable Medical Equipment
Portable Media Players
Point Of Sales Terminal
GPS Devices
Digital Cameras
Netbooks / Notebooks
Smartphones
NOTE: SMPS = Switched-mode power supply
Table 1. FEATURE LIST
TPS22924C
(1)
rON (TYP)
AT 3.6 V
SLEW RATE
(TYP)
AT 3.6 V
QUICK
OUTPUT
DISCHARGE (1)
MAXIMUM
OUTPUT
CURRENT
ENABLE
5.7 mΩ
800 μs
Yes
2A
Active high
This feature discharges the output of the switch to ground through a 1250-Ω resistor, preventing the
output from floating. See the Output Pulldown section in Application Information.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TPS22924C
SLVSA52 – NOVEMBER 2009
www.ti.com
ORDERING INFORMATION (1)
PACKAGE (2)
TA
–40°C to 85°C
(1)
(2)
(3)
ORDERABLE PART NUMBER
DSBGA – YZP (0.5-mm pitch)
Tape and reel
TPS22924CYZPR
TOP-SIDE MARKING (3)
_ _ _ 5L _
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character to
designate the wafer fab/assembly site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
YZP PACKAGE
C
C
B
B
A
A
2 1
Laser Marking View
1 2
Bump View
TERMINALS ASSIGNMENTS (YZP PACKAGE)
C
GND
ON
B
VOUT
VIN
A
VOUT
VIN
1
2
TERMINAL FUNCTIONS
NO.
2
NAME
DESCRIPTION
C1
GND
Ground
C2
ON
Switch control input, active high. Do not leave floating
A1, B1
VOUT
Switch output
A2, B2
VIN
Switch input, bypass this input with a ceramic capacitor to ground
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SLVSA52 – NOVEMBER 2009
BLOCK DIAGRAM
VIN
Charge
Pump
Control
Logic
ON
Turn-On
VOUT
Output Discharge
GND
FUNCTION TABLE
VOUT to GND (1)
ON (Control Signal)
VIN to VOUT
L
OFF
ON
H
ON
OFF
(1)
See application section Output Pulldown.
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TPS22924C
SLVSA52 – NOVEMBER 2009
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ABSOLUTE MAXIMUM RATINGS (1)
MIN
MAX
–0.3
4
V
VIN + 0.3
V
4
V
Maximum continuous switch current, TA = -40°C to 85°C
2
A
Maximum pulsed switch current, 100-µs pulse, 2% duty cycle, TA = -40°C to 85°C
4
A
85
°C
150
°C
VIN
Input voltage range
VOUT
Output voltage range
VON
Input voltage range
IMAX
IPLS
TA
Operating free-air temperature range
Tstg
Storage temperature range
ESD
(1)
–0.3
–40
–65
Electrostatic discharge protection
Human-Body Model (HBM)
5000
Charged-Device Model (CDM)
1000
UNIT
V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATINGS
(1)
BOARD
PACKAGE
RθJC
RθJA
DERATING
FACTOR
ABOVE
TA = 25°C
TA < 25°C
TA = 70°C
TA = 85°C
High-K (1)
YZP
17.6°C/W
123.36°C/W
- 8.1063
mW/°C
810.63 mW
445.84 mW
324.25 mW
The JEDEC high-K (2s2p) board used to derive this data was a 3- × 3-inch, multilayer board with 1-ounce internal power and ground
planes and 2-ounce copper traces on top and bottom of the board.
RECOMMENDED OPERATING CONDITIONS
VIN
Input voltage
VOUT
Output voltage
VIH
High-level input voltage, ON
VIL
Low-level input voltage, ON
CIN
Input capacitance
(1)
4
MIN
MAX
0.75
3.6
V
VIN
V
VIN = 2.5 V to 3.6 V
1.2
3.6
VIN = 0.75 V to 2.5 V
0.9
3.6
VIN = 2.5 V to 3.6 V
0.6
VIN = 0.75 V to 2.5 V
0.4
1 (1)
UNIT
V
V
μF
See the Input Capacitor section in Application Information.
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SLVSA52 – NOVEMBER 2009
ELECTRICAL CHARACTERISTICS
VIN = 0.75 V to 3.6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN TYP (1)
VIN = 2.5 V to 3.6 V
IIN
Quiescent current
IOUT = 0, VIN = VON
VIN = 1.2 V to 2.5 V
Full
VIN = 0.75 V to 1.25 V
IIN(OFF)
OFF-state supply
current
VON = GND, OUT = Open
VIN = 3.6 V
VIN = 2.5 V
VIN = 1.8 V
rON
ON-state resistance
IOUT = -200 mA
VIN = 1.2 V
VIN = 1.0 V
VIN = 0.75 V
rPD
Output pulldown
resistance (2)
VIN = 3.3 V, VON = 0, IOUT = 3 mA
ION
ON-state input leakage
current
VON = 0.9 V to 3.6 V or GND
(1)
(2)
MAX UNIT
60
160
100
350
40
100
Full
2
25°C
5.7
μA
μA
13
Full
17
25°C
5.8
13
Full
17
25°C
5.9
14
Full
18
25°C
6
15
Full
mΩ
21
25°C
7
16
Full
21
25°C
8
19
Full
28
25°C
1250
1500
Ω
0.1
μA
Full
Typical values are at VIN = 3.3 V and TA = 25°C.
See Output Pulldown in Application Information.
SWITCHING CHARACTERISTICS
VIN = 3.6 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tON
Turn-ON time
RL = 10 Ω, CL = 0.1 μF
840
μs
tOFF
Turn-OFF time
RL = 10 Ω, CL = 0.1 μF
3
μs
tr
VOUT rise time
RL = 10 Ω, CL = 0.1 μF
800
μs
tf
VOUT fall time
RL = 10 Ω, CL = 0.1 μF
2.5
μs
SWITCHING CHARACTERISTICS
VIN = 0.9 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tON
Turn-ON time
RL = 10 Ω, CL = 0.1 μF
865
μs
tOFF
Turn-OFF time
RL = 10 Ω, CL = 0.1 μF
20
μs
tr
VOUT rise time
RL = 10 Ω, CL = 0.1 μF
500
μs
tf
VOUT fall time
RL = 10 Ω, CL = 0.1 μF
5
μs
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PARAMETER MEASURMENT INFORMATION
VIN
ON
VOUT
(A)
RL
CL
+
–
OFF
TPS22924C
CIN =1 µF
GND
GND
GND
TEST CIRCUIT
1.8 V
VON
VON
VON/2
VON/2
tr
0V
tON
tOFF
VOUT/2
VOUT/2
90%
VOUT
VOH
VOUT
tf
0V
10%
90%
10%
VOL
tON/tOFF WAVEFORMS
A.
trise and tfall of the control signal is 100 ns.
Figure 1. Test Circuit and tON/tOFF Waveforms
6
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TYPICAL CHARACTERISTICS
ON-STATE RESISTANCE
vs
INPUT VOLTAGE
ON-STATE RESISTANCE
vs
TEMPERATURE
12
12
10
10
V IN = 0.75 V
8
TA = 85°C
rON (mOhm)
rON (mOhm)
8
TA = 25°C
6
TA = -40°C
6
4
4
2
2
0
0
-40
0
0.5
1
1.5
2
2.5
3
3.5
4
V IN = 3.3 V
-15
10
35
60
85
60
85
Tem perature (°C)
V IN (V)
INPUT CURRENT, QUIESCENT
vs
INPUT VOLTAGE
INPUT CURRENT, QUIESCENT
vs
TEMPERATURE
180
70
160
60
140
IIN (Quiescent) (µA)
IIN (µA)
120
100
80
60
50
40
30
20
40
20
10
0
0
1
2
V IN (V)
3
4
0
-40
-15
10
35
Tem perature (°C)
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TYPICAL CHARACTERISTICS (continued)
INPUT CURRENT, OFF
vs
INPUT VOLTAGE
INPUT CURRENT, OFF
vs
TEMPERATURE
180
700
160
600
140
500
IIN (Off) (nA)
IIN (Off) (nA)
120
100
80
400
300
60
200
40
20
100
0
0
1
2
V IN (V)
3
0
-40
4
-15
10
35
60
85
Tem perature (°C)
ON INPUT THRESHOLD
4
V IN = 3.6 V
3.5
3
V IN = 2.5 V
VOUT (V)
2.5
2
V IN = 1.8 V
1.5
V IN = 1.2 V
1
V IN = 1.0 V
V IN = 0.75 V
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V ON (V)
8
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TYPICAL CHARACTERISTICS (continued)
VIN
TURN-ON TIME
vs
TEMPERATURE
= 3.6 V, CLOAD = 0.1 µF, RLOAD = 10 Ω
VIN
TURN-OFF TIME
vs
TEMPERATURE
= 3.6 V, CLOAD = 0.1 µF, RLOAD = 10 Ω
3.1
1200
3.05
1000
3
800
tOFF (µs)
tON (µs)
2.95
600
2.9
2.85
400
2.8
200
2.75
0
-40
-15
10
35
60
2.7
-40
85
-15
VIN
2.4
900
2.38
800
2.36
700
2.34
600
2.32
tF (µs)
tR (µs)
RISE TIME
vs
TEMPERATURE
= 3.6 V, CLOAD = 0.1 µF, RLOAD = 10 Ω
1000
500
2.28
300
2.26
200
2.24
100
2.22
-15
10
35
60
85
60
85
FALL TIME
vs
TEMPERATURE
= 3.6 V, CLOAD = 0.1 µF, RLOAD = 10 Ω
2.3
400
0
-40
35
Tem perature (°C)
Tem perature (°C)
VIN
10
2.2
-40
Tem perature (°C)
-15
10
35
60
85
Tem perature (°C)
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TYPICAL CHARACTERISTICS (continued)
VIN
TURN-ON TIME
vs
TEMPERATURE
= 0.9 V, CLOAD = 0.1 µF, RLOAD = 10 Ω
VIN
1400
TURN-OFF TIME
vs
TEMPERATURE
= 0.9 V, CLOAD = 0.1 µF, RLOAD = 10 Ω
20
18
1200
16
14
12
800
tOFF (µs)
tON (µs)
1000
600
10
8
6
400
4
200
2
0
-40
-15
10
35
60
0
-40
85
-15
Tem perature (°C)
VIN
10
35
60
85
Tem perature (°C)
RISE TIME
vs
TEMPERATURE
= 0.9 V, CLOAD = 0.1 µF, RLOAD = 10 Ω
VIN
700
FALL TIME
vs
TEMPERATURE
= 0.9 V, CLOAD = 0.1 µF, RLOAD = 10 Ω
6
600
5
500
400
tF (µs)
tR (µs)
4
3
300
2
200
1
100
0
-40
-15
10
35
60
85
0
-40
Tem perature (°C)
10
-15
10
35
60
85
Tem perature (°C)
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TYPICAL CHARACTERISTICS (continued)
RISE TIME
vs
INPUT VOLTAGE
CLOAD = 0.1 µF, RLOAD = 10 Ω, VON = 1.8 V
RISE TIME
vs
INPUT VOLTAGE
CLOAD = 20 µF, RLOAD = 10 Ω, VON = 1.8 V
1400
1200
TA = -40°C
TA = -40°C
1200
TA = 25°C
1000
TA = 25°C
TA = 85°C
TA = 85°C
1000
800
tR (µs)
tR (µs)
800
600
600
400
400
200
200
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
V IN (V)
1
1.5
2
2.5
3
3.5
4
V IN (V)
TURN-ON RESPONSE
CIN = 1 µF, CLOAD = 0.1 µF, RLOAD = 10 Ω, VIN = 0.9 V, TA = 25°C
TURN-OFF RESPONSE
CIN = 1 µF, CLOAD = 0.1 µF, RLOAD = 10 Ω, VIN = 0.9 V, TA = 25°C
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TYPICAL CHARACTERISTICS (continued)
TURN-ON RESPONSE
= 1 µF, CLOAD = 20 µF, RLOAD = 10 Ω, VIN = 0.9 V, TA = 25°C
TURN-OFF RESPONSE
CIN = 1 µF, CLOAD = 20 µF, RLOAD = 10 Ω, VIN = 0.9 V, TA = 25°C
TURN-ON RESPONSE
CIN = 1 µF, CLOAD = 0.1 µF, RLOAD = 10 Ω, VIN = 3.6 V, TA = 25°C
TURN-OFF RESPONSE
CIN = 1 µF, CLOAD = 0.1 µF, RLOAD = 10 Ω, VIN = 3.6 V, TA = 25°C
CIN
12
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TYPICAL CHARACTERISTICS (continued)
CIN
TURN-ON RESPONSE
= 1 µF, CLOAD = 20 µF, RLOAD = 10 Ω, VIN = 3.6 V, TA = 25°C
TURN-OFF RESPONSE
CIN = 1 µF, CLOAD = 20 µF, RLOAD = 10 Ω, VIN = 3.6 V, TA = 25°C
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APPLICATION INFORMATION
ON/OFF Control
The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state so long
as there is no fault. ON is active high and has a low threshold, making it capable of interfacing with low-voltage
signals. The ON pin is compatible with standard GPIO logic threshold. It can be used with any microcontroller
with 1.2-V, 1.8-V, 2.5-V or 3.3-V GPIOs.
Input Capacitor
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-μF ceramic
capacitor, CIN, placed close to the pins is usually sufficient. Higher values of CIN can be used to further reduce
the voltage drop.
Output Capacitor
Due to the integral body diode in the PMOS switch, a CIN greater than CL is highly recommended. A CL greater
than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow
through the body diode from VOUT to VIN.
Output Pulldown
The output pulldown is active when the user is turning off the main pass FET. The pulldown discharges the
output rail to approximately 10% of the rail, then the output pulldown is automatically disconnected to optimize
the shutdown current.
Board Layout
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic
electrical effects along with minimizing the case to ambient thermal impedance.
14
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PACKAGE OPTION ADDENDUM
www.ti.com
4-Dec-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS22924CYZPR
PREVIEW
DSBGA
YZP
6
Green (RoHS &
no Sb/Br)
SNAGCU
TPS22924CYZPT
PREVIEW
DSBGA
YZP
6
TBD
Call TI
Lead/Ball Finish
MSL Peak Temp (3)
Level-1-260C-UNLIM
Call TI
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
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to Customer on an annual basis.
Addendum-Page 1
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logic.ti.com
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microcontroller.ti.com
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