ZETEX BCX38A

BCX38A/B/C
VCE=5V
IC/IB=100
hFE - Normalised Gain
VCE(sat) - (Volts)
1.6
-55°C
0.8
+25°C
0.6
+100°C
0.4
+175°C
0.2
0.001
0.1
1
+100°C
1.4
C
B
E
1.2
1.0
+25°C
0.8
0.4
ABSOLUTE MAXIMUM RATINGS.
-55°C
0.2
10
0.001
IC - Collector Current (Amps)
0.01
0.1
VCE(sat) v IC
hFE v IC
VCE=5V
IC/IB=100
2.0
-55°C
VBE - (Volts)
VBE(sat) - (Volts)
10
1
IC - Collector Current (Amps)
2.0
1.5
+25°C
+100°C
1.0
-55°C
0.01
0.1
1
0.5
0.001
10
IC - Collector Current (Amps)
Thermal Resistance (°C/W)
D=0.5
50
D=0.2
0
0.0001
D=0.1
D=0.05
Single Pulse
0.001
0.01
0.1
1
10
0.01
1
Maximum transient thermal impedance
V
10
V
Peak Pulse Current
ICM
2
A
800
mA
1
W
-55 to +200
°C
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
IC=10µ A, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus)
60
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
V
IE=10µ A, IC=0
Collector Cut-Off
Current
ICBO
100
nA
VCB=60V, IE=0
Emitter Cut-Off
Current
IEBO
100
nA
VEB=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
1.25
V
IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1.8
V
IC=800mA, VCE=5V*
+175°C
0.01
0.1
1
10
Single Pulse Test at Tamb=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
10
100
VCE - Collector Voltage (Volts)
Safe Operating Area
3-21
60
VEBO
V
100
Pulse Width (seconds)
VCEO
Emitter-Base Voltage
80
1
0.1
Collector-Emitter Voltage
V(BR)CBO
VBE(on) v IC
100
V
Collector-Base
Breakdown Voltage
VBE(sat) v IC
150
UNIT
80
+100°C
IC - Collector Current (Amps)
10
VALUE
VCBO
PARAMETER
IC - Collector Current (Amps)
D=1 (D.C.)
SYMBOL
Collector-Base Voltage
+25°C
+175°C
0.001
PARAMETER
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
1.5
1.0
0.5
E-Line
TO92 Compatible
0.6
0
0.01
BCX38A/B/C
ISSUE 1 – MARCH 94
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
* Ptot=1 Watt
TYPICAL CHARACTERISTICS
1.0
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
1000
Static
Forward
Current
Transfer
Ratio
BCX38A
SYMBOL
hFE
MIN.
TYP.
MAX.
UNIT CONDITIONS.
500
1000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
BCX38B
2000
4000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
BCX38C
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
3-20
BCX38A/B/C
VCE=5V
IC/IB=100
hFE - Normalised Gain
VCE(sat) - (Volts)
1.6
-55°C
0.8
+25°C
0.6
+100°C
0.4
+175°C
0.2
0.001
0.1
1
+100°C
1.4
C
B
E
1.2
1.0
+25°C
0.8
0.4
ABSOLUTE MAXIMUM RATINGS.
-55°C
0.2
10
0.001
IC - Collector Current (Amps)
0.01
0.1
VCE(sat) v IC
hFE v IC
VCE=5V
IC/IB=100
2.0
-55°C
VBE - (Volts)
VBE(sat) - (Volts)
10
1
IC - Collector Current (Amps)
2.0
1.5
+25°C
+100°C
1.0
-55°C
0.01
0.1
1
0.5
0.001
10
IC - Collector Current (Amps)
Thermal Resistance (°C/W)
D=0.5
50
D=0.2
0
0.0001
D=0.1
D=0.05
Single Pulse
0.001
0.01
0.1
1
10
0.01
1
Maximum transient thermal impedance
V
10
V
Peak Pulse Current
ICM
2
A
800
mA
1
W
-55 to +200
°C
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
IC=10µ A, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus)
60
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
V
IE=10µ A, IC=0
Collector Cut-Off
Current
ICBO
100
nA
VCB=60V, IE=0
Emitter Cut-Off
Current
IEBO
100
nA
VEB=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
1.25
V
IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1.8
V
IC=800mA, VCE=5V*
+175°C
0.01
0.1
1
10
Single Pulse Test at Tamb=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
10
100
VCE - Collector Voltage (Volts)
Safe Operating Area
3-21
60
VEBO
V
100
Pulse Width (seconds)
VCEO
Emitter-Base Voltage
80
1
0.1
Collector-Emitter Voltage
V(BR)CBO
VBE(on) v IC
100
V
Collector-Base
Breakdown Voltage
VBE(sat) v IC
150
UNIT
80
+100°C
IC - Collector Current (Amps)
10
VALUE
VCBO
PARAMETER
IC - Collector Current (Amps)
D=1 (D.C.)
SYMBOL
Collector-Base Voltage
+25°C
+175°C
0.001
PARAMETER
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
1.5
1.0
0.5
E-Line
TO92 Compatible
0.6
0
0.01
BCX38A/B/C
ISSUE 1 – MARCH 94
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
* Ptot=1 Watt
TYPICAL CHARACTERISTICS
1.0
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
1000
Static
Forward
Current
Transfer
Ratio
BCX38A
SYMBOL
hFE
MIN.
TYP.
MAX.
UNIT CONDITIONS.
500
1000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
BCX38B
2000
4000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
BCX38C
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
3-20
Maximum Power Dissipation - (W)
BCX38A/B/C
The maximum permissable operational
temperature can be obtained using the
equation:
1.0
RS≤10kΩ
T amb (max ) =
RS=47kΩ
0.8
RS=1MΩ
0.6
0.2
1
10
Tamb(max)= Maximum operating ambient
temperature
Power (max) = Maximum power
dissipation figure, for a given VCE and
source resistance (RS)
RS= ∞
0.4
Power (max ) −Power (actual )
+ 25° C
0.0057
100
Power (actual) = Actual power dissipation
in users circuit
VCE - Collector-Emitter Voltage - (V)
3-22