PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 -0.8 tr ts nS µS 500 5 Switching time VCE(sat) - (Volts) IC/IB=10 -0.6 -0.4 -0.2 400 4 300 3 200 2 0 -0.0001 -0.001 -0.01 -0.1 tf nS 1000 ts C B 800 600 tf td nS 400 100 td 100 0 -1 1 0 -0.01 IC - Collector Current (Amps) tr -0.1 200 50 0 0 -1 IC - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds -1.0 IC/IB=10 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 80 VCE=-10V 60 40 20 -0.0001 -0.8 -0.01 -0.1 -0.4 -1 -0.001 -0.01 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1 IC - Collector Current (Amps) -1.2 VBE - (Volts) -0.0001 IC - Collector Current (Amps) -1.4 VCE=-10V -1.0 -0.8 -0.6 -0.0001 -0.001 -0.01 -0.1 -0.1 -1 Single Pulse Test at Tamb=25°C 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms -1 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-205 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -0.6 -0.2 -0.001 ZTX576 ISSUE 1 APRIL 94 FEATURES * 200 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt 1000 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -200 V IC=-100µ A V(BR)CEO -200 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -0.1 µA VCB=-160V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1 V IC=-100mA, IB=-10mA* Base-Emitter Turn-on Voltage VBE(on) -1 V IC=-100mA, VCE=-10V* Static Forward Current Transfer Ratio hFE 50 50 Transition Frequency fT 100 IC=-10mA, VCE=-10V* IC=-300mA, VCE=-10V* 300 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-204 IC=-50mA, VCE=-10V f=100MHz PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 -0.8 tr ts nS µS 500 5 Switching time VCE(sat) - (Volts) IC/IB=10 -0.6 -0.4 -0.2 400 4 300 3 200 2 0 -0.0001 -0.001 -0.01 -0.1 tf nS 1000 ts C B 800 600 tf td nS 400 100 td 100 0 -1 1 0 -0.01 IC - Collector Current (Amps) tr -0.1 200 50 0 0 -1 IC - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds -1.0 IC/IB=10 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 80 VCE=-10V 60 40 20 -0.0001 -0.8 -0.01 -0.1 -0.4 -1 -0.001 -0.01 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1 IC - Collector Current (Amps) -1.2 VBE - (Volts) -0.0001 IC - Collector Current (Amps) -1.4 VCE=-10V -1.0 -0.8 -0.6 -0.0001 -0.001 -0.01 -0.1 -0.1 -1 Single Pulse Test at Tamb=25°C 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms -1 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-205 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -0.6 -0.2 -0.001 ZTX576 ISSUE 1 APRIL 94 FEATURES * 200 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt 1000 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -200 V IC=-100µ A V(BR)CEO -200 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -0.1 µA VCB=-160V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1 V IC=-100mA, IB=-10mA* Base-Emitter Turn-on Voltage VBE(on) -1 V IC=-100mA, VCE=-10V* Static Forward Current Transfer Ratio hFE 50 50 Transition Frequency fT 100 IC=-10mA, VCE=-10V* IC=-300mA, VCE=-10V* 300 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-204 IC=-50mA, VCE=-10V f=100MHz