ZTX458 Tamb=25°C 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 ABSOLUTE MAXIMUM RATINGS. 0.6 0.1 1 10 20 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC VCE=10V -55°C +25°C +100°C +175°C 1.6 300 IC/IB=10 1.4 1.0 200 0.8 0.6 100 0.4 0.2 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 0 10 20 1 0.001 1.4 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C IC - Collector Current (Amps) 1.6 0.01 IC - Collector Current (Amps) VCE=10V 1.2 1.0 0.8 0.6 0.4 0.2 10 20 Single Pulse Test at Tamb=25°C 1.0 VBE - (Volts) 0.01 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0 0.001 0.01 0.1 1 10 20 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-183 E E-Line TO92 Compatible 0.8 IC - Collector Current (Amps) 1.2 0 1.0 0 0.001 10 20 VBE(sat) - (Volts) hFE - Normalised Gain 1.4 C B 1.2 0.2 +100°C +25°C -55°C 1.6 1.4 IC/IB=10 0.4 0.2 0 0.001 -55°C +25°C +100°C +175°C 1.6 VCE(sat) - (Volts) VCE(sat) - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 ZTX458 ISSUE 2 MARCH 1994 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 1.6 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V 300 mA Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). TYP. MAX. 1 W -55 to +200 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 400 V IC=100µ A Collector-Emitter Breakdown Voltage VCEO(sus) 400 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 100 nA VCB=320V Collector Cut-Off Current ICES 100 nA VCE=320V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.5 V V IC=20mA, IB=2mA IC=50mA, IB=6mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=50mA, IB=5mA Base-Emitter Turn On Voltage VBE(on) 0.9 V IC=50mA, VCE=10V Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo IC=1mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V* 300 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz 1000 5 3-182 ZTX458 Tamb=25°C 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 ABSOLUTE MAXIMUM RATINGS. 0.6 0.1 1 10 20 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC VCE=10V -55°C +25°C +100°C +175°C 1.6 300 IC/IB=10 1.4 1.0 200 0.8 0.6 100 0.4 0.2 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 0 10 20 1 0.001 1.4 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C IC - Collector Current (Amps) 1.6 0.01 IC - Collector Current (Amps) VCE=10V 1.2 1.0 0.8 0.6 0.4 0.2 10 20 Single Pulse Test at Tamb=25°C 1.0 VBE - (Volts) 0.01 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0 0.001 0.01 0.1 1 10 20 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-183 E E-Line TO92 Compatible 0.8 IC - Collector Current (Amps) 1.2 0 1.0 0 0.001 10 20 VBE(sat) - (Volts) hFE - Normalised Gain 1.4 C B 1.2 0.2 +100°C +25°C -55°C 1.6 1.4 IC/IB=10 0.4 0.2 0 0.001 -55°C +25°C +100°C +175°C 1.6 VCE(sat) - (Volts) VCE(sat) - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 ZTX458 ISSUE 2 MARCH 1994 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 1.6 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V 300 mA Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). TYP. MAX. 1 W -55 to +200 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 400 V IC=100µ A Collector-Emitter Breakdown Voltage VCEO(sus) 400 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 100 nA VCB=320V Collector Cut-Off Current ICES 100 nA VCE=320V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.5 V V IC=20mA, IB=2mA IC=50mA, IB=6mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=50mA, IB=5mA Base-Emitter Turn On Voltage VBE(on) 0.9 V IC=50mA, VCE=10V Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo IC=1mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V* 300 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz 1000 5 3-182