ZTX552 ZTX553 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 td tr ns ns 100 200 -0.8 ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS tf ts µS nS 3 600 ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt Switching time VCE(sat) - (Volts) ts -0.6 IC/IB=10 -0.4 -0.2 80 160 60 120 1 40 80 0 -0.001 -0.01 -0.1 -1 400 tr 200 100 0 -0.01 IC - Collector Current (Amps) 0 -0.1 0 -1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds -1.0 IC/IB=10 80 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 VCE=-10V 60 40 20 -0.001 -0.8 -0.1 -1 VBE(sat) v IC IC - Collector Current (Amps) -0.6 VBE - (Volts) -1 Single Pulse Test at Tamb=25°C -10 -0.4 -0.1 -0.01 -0.001 hFE v IC -0.8 -1 -0.1 D.C. 1s 100ms 10ms 1.0ms 100µs ZTX552 -0.0001 -0.001 -0.01 -0.1 SYMBOL ZTX552 ZTX553 UNIT Collector-Base Voltage VCBO -100 -120 V Collector-Emitter Voltage VCEO -80 -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation: at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C SYMBOL -0.4 IC - Collector Current (Amps) -1.0 PARAMETER ZTX552 MIN. IC - Collector Current (Amps) VCE=-10V E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER -10 -1.2 -1 ZTX553 -0.01 -0.1 -1 -10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area -100 MAX. ZTX553 MIN. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO -100 -120 V IC=-100µA Collector-Emitter Sustaining Voltage VCEO(sus) -80 -100 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-80V VCB=-100V Emitter Cut-Off Current IEBO -0.1 -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.25 V IC=-150mA, IB=-15mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 -1.1 V IC=-150mA, IB=-15mA* Base-Emitter Turn-onn Voltage VBE(on) -1.0 -1.0 V IC=-150mA, VCE=-10V* Static Forward Current hFE Transfer Ratio 40 10 Transition Frequency fT 150 Output Capacitance Cobo 150 -0.1 40 10 200 150 12 12 IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz MHz VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-197 E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -0.6 -0.2 -0.01 C B td 20 40 0 2 tf 3-196 ZTX552 ZTX553 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 td tr ns ns 100 200 -0.8 ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS tf ts µS nS 3 600 ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt Switching time VCE(sat) - (Volts) ts -0.6 IC/IB=10 -0.4 -0.2 80 160 60 120 1 40 80 0 -0.001 -0.01 -0.1 -1 400 tr 200 100 0 -0.01 IC - Collector Current (Amps) 0 -0.1 0 -1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds -1.0 IC/IB=10 80 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 VCE=-10V 60 40 20 -0.001 -0.8 -0.1 -1 VBE(sat) v IC IC - Collector Current (Amps) -0.6 VBE - (Volts) -1 Single Pulse Test at Tamb=25°C -10 -0.4 -0.1 -0.01 -0.001 hFE v IC -0.8 -1 -0.1 D.C. 1s 100ms 10ms 1.0ms 100µs ZTX552 -0.0001 -0.001 -0.01 -0.1 SYMBOL ZTX552 ZTX553 UNIT Collector-Base Voltage VCBO -100 -120 V Collector-Emitter Voltage VCEO -80 -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation: at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C SYMBOL -0.4 IC - Collector Current (Amps) -1.0 PARAMETER ZTX552 MIN. IC - Collector Current (Amps) VCE=-10V E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER -10 -1.2 -1 ZTX553 -0.01 -0.1 -1 -10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area -100 MAX. ZTX553 MIN. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO -100 -120 V IC=-100µA Collector-Emitter Sustaining Voltage VCEO(sus) -80 -100 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-80V VCB=-100V Emitter Cut-Off Current IEBO -0.1 -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.25 V IC=-150mA, IB=-15mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 -1.1 V IC=-150mA, IB=-15mA* Base-Emitter Turn-onn Voltage VBE(on) -1.0 -1.0 V IC=-150mA, VCE=-10V* Static Forward Current hFE Transfer Ratio 40 10 Transition Frequency fT 150 Output Capacitance Cobo 150 -0.1 40 10 200 150 12 12 IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz MHz VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-197 E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -0.6 -0.2 -0.01 C B td 20 40 0 2 tf 3-196