ZTX754 ZTX755 ISSUE 2 JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS td tr tf µs ts µs 0.8 td 0.4 Switching time VCE(sat) - (Volts) 0.6 IC/IB=10 0.4 0.2 0.001 0.01 0.1 IB1=IB2=IC/10 VCE=10V ts 2.0 0.5 0 C B 0.3 1.0 ABSOLUTE MAXIMUM RATINGS. 0.2 tr 0.1 0 0.01 1 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.0 VCE=5V 60 40 20 0.01 0.1 1 ZTX754 ZTX755 UNIT VCBO -125 -150 V Collector-Emitter Voltage VCEO -125 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER 0.4 0.001 IC - Collector Current (Amps) VBE(sat) v IC IC - Collector Current (Amps) 0.8 0.6 0.0001 0.001 0.01 0.1 1 0.1 0.01 hFE v IC VCE=5V Single Pulse Test at Tamb=25°C 1 D.C. 1s 100ms 10ms 1.0ms 300µs 0.1 ZTX754 1 ZTX755 0.01 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-264 ZTX754 MIN. IC - Collector Current (Amps) 1.0 SYMBOL 0.6 0.2 10 1.2 VBE - (Volts) SYMBOL Collector-Base Voltage -150 V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.8 10 0.4 PARAMETER IC/IB=10 80 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 E E-Line TO92 Compatible tf IC - Collector Current (Amps) 0.001 ZTX754 ZTX755 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS MAX. ZTX755 MIN. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO -125 -150 V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -125 -150 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µA, IC=0 Collector Cut-Off Current ICBO -100 -100 nA nA VCB=-100V, IE=0 VCB=-125V, IE=0 Emitter Cut-Off Current IEBO -100 -100 nA VEB=-3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 -0.5 -0.5 -0.5 V V IC=-500mA, IB=-50mA* IC=-1A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 -1.1 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 -1.0 V IC=-500mA, VCE=-5V* Static Forward hFE Current Transfer Ratio 50 50 20 50 50 20 Transition Frequency fT 30 30 Output Capacitance Cobo 1000 20 3-263 IC=-10mA, VCE=-5V IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* 20 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ZTX754 ZTX755 ISSUE 2 JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS td tr tf µs ts µs 0.8 td 0.4 Switching time VCE(sat) - (Volts) 0.6 IC/IB=10 0.4 0.2 0.001 0.01 0.1 IB1=IB2=IC/10 VCE=10V ts 2.0 0.5 0 C B 0.3 1.0 ABSOLUTE MAXIMUM RATINGS. 0.2 tr 0.1 0 0.01 1 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.0 VCE=5V 60 40 20 0.01 0.1 1 ZTX754 ZTX755 UNIT VCBO -125 -150 V Collector-Emitter Voltage VCEO -125 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER 0.4 0.001 IC - Collector Current (Amps) VBE(sat) v IC IC - Collector Current (Amps) 0.8 0.6 0.0001 0.001 0.01 0.1 1 0.1 0.01 hFE v IC VCE=5V Single Pulse Test at Tamb=25°C 1 D.C. 1s 100ms 10ms 1.0ms 300µs 0.1 ZTX754 1 ZTX755 0.01 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-264 ZTX754 MIN. IC - Collector Current (Amps) 1.0 SYMBOL 0.6 0.2 10 1.2 VBE - (Volts) SYMBOL Collector-Base Voltage -150 V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.8 10 0.4 PARAMETER IC/IB=10 80 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 E E-Line TO92 Compatible tf IC - Collector Current (Amps) 0.001 ZTX754 ZTX755 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS MAX. ZTX755 MIN. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO -125 -150 V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -125 -150 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µA, IC=0 Collector Cut-Off Current ICBO -100 -100 nA nA VCB=-100V, IE=0 VCB=-125V, IE=0 Emitter Cut-Off Current IEBO -100 -100 nA VEB=-3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 -0.5 -0.5 -0.5 V V IC=-500mA, IB=-50mA* IC=-1A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 -1.1 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 -1.0 V IC=-500mA, VCE=-5V* Static Forward hFE Current Transfer Ratio 50 50 20 50 50 20 Transition Frequency fT 30 30 Output Capacitance Cobo 1000 20 3-263 IC=-10mA, VCE=-5V IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* 20 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz