PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX556 ZTX557 ISSUE 1 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ts µs µs IC/IB=10 IB1=IB2=IC/10 16 4 3 -0.4 -0.2 tf 12 tr 2 -0.0001 -0.001 -0.01 -0.1 8 1.0 100 1 4 0.5 td 0 -0.01 IC - Collector Current (Amps) 0 IC - Collector Current (Amps) -1.4 80 -1.2 VCE=-10V VBE(sat) - (Volts) hFE - Normalised Gain (%) Switching Speeds 100 40 20 IC/IB=10 -0.0001 -0.001 -0.01 -0.1 -0.0001 -0.001 -0.01 IC - Collector Current (Amps) VBE(sat) v IC IC - Collector Current (Amps) -0.8 -0.6 -0.1 -1 Single Pulse Test at Tamb=25°C 1.0 -1.0 0.1 D.C. 1s 100ms 10ms 1.0ms 100µs 0.01 ZTX556 -0.0001 -0.001 -0.01 -0.1 -1 ZTX557 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-201 ZTX556 ZTX557 UNIT VCBO -200 -300 V Collector-Emitter Voltage VCEO -200 -300 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A V Continuous Collector Current IC -0.5 A Power Dissipation Ptot 1.0 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C SYMBOL ZTX556 MIN. hFE v IC VCE=-10V SYMBOL Collector-Base Voltage PARAMETER IC - Collector Current (Amps) -1.2 PARAMETER -0.8 1 -1.4 ABSOLUTE MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -1.0 -0.6 0 VBE - (Volts) 0 -0.1 VCE(sat) v IC 60 50 E E-Line TO92 Compatible td ns 6 0 -1 C B 1.5 ts 10 2 0 tr µs 2.0 14 -0.6 Switching time VCE(sat) - (Volts) -0.8 ZTX556 ZTX557 1000 MAX ZTX557 MIN. UNIT CONDITIONS. MAX Collector-Base Breakdown Voltage V(BR)CBO -200 -300 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -200 -300 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µ A Collector Cut-Off Current ICBO -0.1 -0.1 µA µA VCB=-160V VCB=-200V Emitter Cut-Off Current IEBO -0.1 -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.3 V IC=-50mA, IB=-5mA* Base-Emitter Saturation Voltage VBE(sat) -1 -1 V IC=-50mA, IB=-5mA* Base-Emitter Turn-on Voltage VBE(on) -1 -1 V IC=-50mA, VCE=-10V* Static Forward Current Transfer Ratio hFE 50 50 Transition Frequency fT 75 300 50 50 75 3-200 IC=-10mA, VCE=-10V* IC=-50mA, VCE=-10V* 300 MHz IC=-50mA, VCE=-10V f=100MHz PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX556 ZTX557 ISSUE 1 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ts µs µs IC/IB=10 IB1=IB2=IC/10 16 4 3 -0.4 -0.2 tf 12 tr 2 -0.0001 -0.001 -0.01 -0.1 8 1.0 100 1 4 0.5 td 0 -0.01 IC - Collector Current (Amps) 0 IC - Collector Current (Amps) -1.4 80 -1.2 VCE=-10V VBE(sat) - (Volts) hFE - Normalised Gain (%) Switching Speeds 100 40 20 IC/IB=10 -0.0001 -0.001 -0.01 -0.1 -0.0001 -0.001 -0.01 IC - Collector Current (Amps) VBE(sat) v IC IC - Collector Current (Amps) -0.8 -0.6 -0.1 -1 Single Pulse Test at Tamb=25°C 1.0 -1.0 0.1 D.C. 1s 100ms 10ms 1.0ms 100µs 0.01 ZTX556 -0.0001 -0.001 -0.01 -0.1 -1 ZTX557 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-201 ZTX556 ZTX557 UNIT VCBO -200 -300 V Collector-Emitter Voltage VCEO -200 -300 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A V Continuous Collector Current IC -0.5 A Power Dissipation Ptot 1.0 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C SYMBOL ZTX556 MIN. hFE v IC VCE=-10V SYMBOL Collector-Base Voltage PARAMETER IC - Collector Current (Amps) -1.2 PARAMETER -0.8 1 -1.4 ABSOLUTE MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -1.0 -0.6 0 VBE - (Volts) 0 -0.1 VCE(sat) v IC 60 50 E E-Line TO92 Compatible td ns 6 0 -1 C B 1.5 ts 10 2 0 tr µs 2.0 14 -0.6 Switching time VCE(sat) - (Volts) -0.8 ZTX556 ZTX557 1000 MAX ZTX557 MIN. UNIT CONDITIONS. MAX Collector-Base Breakdown Voltage V(BR)CBO -200 -300 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -200 -300 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µ A Collector Cut-Off Current ICBO -0.1 -0.1 µA µA VCB=-160V VCB=-200V Emitter Cut-Off Current IEBO -0.1 -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.3 V IC=-50mA, IB=-5mA* Base-Emitter Saturation Voltage VBE(sat) -1 -1 V IC=-50mA, IB=-5mA* Base-Emitter Turn-on Voltage VBE(on) -1 -1 V IC=-50mA, VCE=-10V* Static Forward Current Transfer Ratio hFE 50 50 Transition Frequency fT 75 300 50 50 75 3-200 IC=-10mA, VCE=-10V* IC=-50mA, VCE=-10V* 300 MHz IC=-50mA, VCE=-10V f=100MHz