SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 SEPTEMBER 95 ✪ BSS79B BSS79C PARTMARKING DETAILS - BSS79B - CE BSS79C - CF C E B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 800 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 75 MAX. V IC=10µ A Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=10mA V IE=10µ A ICBO 10 10 nA µA VCB=60V VCB=60V, Tamb=150oC Emitter Base Cut-Off Current IEBO 10 nA VBE=3.0V Collector-Emitter Saturation Voltage VCE(sat) 0.3 1.0 V V IC=150mA, IB=15mA IC=500mA, IB=50mA Static Forward Current Transfer Ratio hFE 40 100 fT 250 Emitter-Base Breakdown Voltage V(BR)EBO Collector Base Cut-Off Current BSS79B BSS79C Transition Frequency 6 120 300 IC=150mA, VCE=10V IC= 150mA, VCE=10V MHz VCE=20V, IC=20mA f=100MHz Collector-Base Capacitance Cobo 8 pF VCB=10V, f=1MHz Delay Time td 10 ns Rise Time tr 10 ns VCC=30V, IC=150mA IB1=IB2=15mA Storage Time ts 225 ns Fall Time tf 60 ns PAGE NUMBER VCC=30V, IC=150mA IB1=IB2=15mA