ZETEX BSS79C

SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 – SEPTEMBER 95
✪
BSS79B
BSS79C
PARTMARKING DETAILS -
BSS79B - CE
BSS79C - CF
C
E
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Peak Pulse Current
ICM
800
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
75
MAX.
V
IC=10µ A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
40
V
IC=10mA
V
IE=10µ A
ICBO
10
10
nA
µA
VCB=60V
VCB=60V, Tamb=150oC
Emitter Base Cut-Off Current
IEBO
10
nA
VBE=3.0V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.3
1.0
V
V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
Static Forward
Current
Transfer Ratio
hFE
40
100
fT
250
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Base Cut-Off Current
BSS79B
BSS79C
Transition Frequency
6
120
300
IC=150mA, VCE=10V
IC= 150mA, VCE=10V
MHz
VCE=20V, IC=20mA
f=100MHz
Collector-Base Capacitance
Cobo
8
pF
VCB=10V, f=1MHz
Delay Time
td
10
ns
Rise Time
tr
10
ns
VCC=30V, IC=150mA
IB1=IB2=15mA
Storage Time
ts
225
ns
Fall Time
tf
60
ns
PAGE NUMBER
VCC=30V, IC=150mA
IB1=IB2=15mA