NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ZTX614 ISSUE 1 APRIL 94 FEATURES * 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot=1 Watt C B REFER TO BCX38 FOR GRAPHS E E-line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 10 V Continuous Collector Current IC 800 mA Power Dissipation at Tamb=25°C derate above 25°C Ptot 1.0 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Sustaining Voltage UNIT CONDITIONS. 120 V IC=10µ A, IE=0 VCEO(sus) 100 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=60V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.25 V IC=800mA, IB=8mA* Base-Emitter Turn-On Voltage VBE(on) 1.8 V IC=800mA, VCE=5V* Static Forward Current hFE Transfer Ratio TYP. MAX. 5000 10000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% 3-215