Spec. No. IGBT-SP-99026(R1) Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12 [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING · Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) · High reliability structure. · Isolated heat sink (terminals to base). Unit in mm 108 93 62 48 2-M4 E 20 CIRCUIT DIAGRAM E G 24 2-M6 C C E 20 4- φ 6.5 29 G 33.5 23.5 6.5 E Weight : 480g ABSOLUTE MAXIMUM RATINGS(TC=25°C) Item Symbol Unit Collector-Emitter Voltage VCES V Gate-Emitter Voltage VGES V DC IC Collector Current A 1ms ICP DC IF Forward Current A 1ms IFM Collector Power Dissipation PC W Junction Temperature Tj °C Storage Temperature Tstg °C Isolation Voltage Viso VRMS Terminals (M4/M6) N·m Screw Torque (kgf·cm) Mounting Notes; *1: RMS current of Diode £ 120 Arms *2: Recommended value 1.18 / 2.45 N·m (12 / 25 kgf·cm) *3: Recommended value 2.45 N·m (25 kgf·cm) Value 1200 ±20 400 800 *1 400 800 2080 -40 ~ +150 -40 ~ +125 2500(AC 1 minute) 1.37(14) / 2.94(30) *3 2.94(30) *2 CHARACTERISTICS (TC=25°C) Item Symbol Unit Min. Typ. Max. Test Conditions Collector-Emitter Cut-Off Current ICES mA 1.0 VCE=1200V, VGE=0V Gate-Emitter Leakage Current IGES nA VGE=±20V, VCE=0V ±500 Collector-Emitter Saturation Voltage VCE(sat) V 2.2 2.8 IC=400A, VGE=15V Gate-Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC=400mA Input Capacitance Cies pF 37000 VCE=10V, VGE=0V, f=1MHz Rise Time tr 0.25 0.7 VCC=600V RL=1.5W Turn-ON Time ton 0.4 0.9 Switching Times ms *4 RG=2.7W Fall Time tf 0.2 0.35 VGE=±15V Turn-Off Time toff 0.7 1.1 Peak Forward Voltage Drop VFM V 2.5 3.5 IF=400A, VGE=0V Reverse Recovery Time trr 0.4 IF=400A, VGE=-10V, di/dt=400A/ms ms IGBT Rth(j-c) 0.06 Thermal Impedance Junction to case °C/W FWD Rth(j-c) 0.10 Notes; *4:RG value is the test condition’s value for decision of the switching times, not recommended value, please determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. Remark; The specification given herein, is subject to change without prior notice to improve product characteristics. VGE=15V14V13V 800 TYPICAL VGE=15V14V13V 800 Tc=25°C TYPICAL Tc=125°C 12V 600 Pc=2080W 11V 400 10V 200 Collector Current, Ic (A) Collector Current, Ic (A) 12V 600 11V 400 10V 200 9V 9V 0 2 4 6 8 10 0 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 6 8 TYPICAL 10 Tc=25°C 8 6 4 Ic=800A 2 Ic=400A 10 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) 4 TYPICAL 10 0 Tc=125°C 8 6 4 Ic=800A Ic=400A 2 0 0 5 10 15 20 0 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Forward Current, IF (A) 10 5 0 10 15 20 TYPICAL 800 Vcc=600V Ic =400A Tc=25°C 15 5 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage TYPICAL 20 Gate to Emitter Voltage, VGE (V) 2 VGE=0 Tc=25°C Tc=125°C 600 400 200 0 0 500 1000 1500 2000 2500 Gate Charge, QG (nC) Gate charge characteristics 3000 0 1 2 3 4 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode PDE-N400GR12-0 TYPICAL TYPICAL 10 Vcc=600V VGE=±15V RG=2.7Ω TC=25°C Resistive Load Switching Time, t (µs) Switching Time, t (µs) 1.5 1 toff 0.5 ton VCC=600V VGE=±15V IC =400A TC=25°C Resistive Load ton tr 1 toff tr tf tf 0.1 0 0 100 200 300 400 1 500 Collector Current, IC (A) Switching time vs. Collector current 10 100 Gate Resistance, RG (Ω) Switching time vs. Gate resistance TYPICAL TYPICAL 100 80 Switching Loss, Eton, Etoff, Err (mJ/pulse) 90 Switching Loss, Eton,Etoff, Err (mJ/pulse) 1000 VCC=600V VGE=±15V RG=2.7Ω TC=125°C Inductive Load Eton 70 Etoff 60 50 40 30 20 Err 10 0 VCC=600V VGE=±15V IC =400A TC=125°C Inductive Load Eton 100 Etoff 10 Err 1 0 100 200 300 400 1 500 Collector Current. IC (A) Switching loss vs. Collector current 100 1 Transient Thermal Impedance, Rth(j-c) (°C/W) 10000 VGE=±15V RG=2.7Ω TC≤125°C 1000 Collector Current, Ic (A) 10 Gate Resistance. RG (Ω) Switching loss vs. Gate resistance 100 10 1 0 200 400 600 800 1000 1200 Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area 1400 Diode 0.1 IGBT 0.01 0.001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance PDE-N400GR12-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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