INTEGRAL INA2586

ICs for TV-SETS
INA2586
1024 x 8-Bit n-MOS EEPROM with I2C-Bus Interface
The INA2586 is a 8-Kbit (1024 x 8-bit) n-MOS floating gate electrically erasable programmable read only memory (EEPROM).
2
2
IC works in systems with serial I C-bus. Up to two INA2586 devices may be connected to the I C-bus.The programming of the
array is implemented by electron’s tunneling. The programming voltage is generated on-chip, using a voltage multiplier. Device
is functionally identical to the SDA2586, Siemens. IC are made in 8-pin DIP and 8-pin SOP.
FEATURES
♦ Non-volatile storage of information during 10 years
♦ Single supply (Ucc=4,75 B - 5,25 B)
♦ On-chip voltage multiplier
♦ On-chip generator of bulk biasing
2
♦ Serial input/output I C-bus
♦ 10 000 ERASE/WRITE cycles per byte;
♦ Internal reprogramming (no external components)
♦ Duration of the ERASE/WRITE cycle is 15 ms
0
♦ Temperature range: 0 ÷ +70 C
ELECTRICAL CHARACTERISTICS
Parameter
Supply current, mA
Output low voltage (SDA), V
High leakage current:
-on output (SDA), µA
-on inputs SCL, SDA, µA
-on inputs CS, TP1, TP2,µA
Input capacitance, pF
Clock input frequency, kHz
Reprogramming cycle time, ms
Erase of die cycle time, ms
The number of E/W cycles on 1 byte
Input high voltage:
-inputs SDA, SCL, V
-inputs CS, TP1, TP2, V
Input low voltage:
-inputs SDA, SCL, V
-inputs CS, TP1, TP2, V
Conditions
UCC=5.25 B
IOL=3 mA
UCC=4.75B
Symbol
ICC0
UOL
Min.
-
Max
20,0
0,4
UOH=5,25 B
UIH=5,25 B
UIH=5,25 B
U I= 0 B
ILOH
ILIH
ILIH
CI
fSCL
Erase and Write
UTP2= 5,0 B
tPROG
tER
0
10,0
10 000
10,0
10,0
100,0
10,0
100
20,0
20,0
-
UIH
3,0
4,5
UCC
UCC
UIL
-
1,5
0,2
PIN ASSIGNMENT
PIN DESCRIPTION
SYMBOL
Uss
CS
TP1
TP2
SDA
SCL
TP3
Ucc
PIN
1
2
3
4
5
6
7
8
Uss
DESCRIPTION
GND
Chip selection
Testing pin
Testing pin (0V - normal mode,
5V - chip erasing)
Informational line, input/output
Clock input
Testing pin, not connected
Supply Voltage
Ucc
1
8
CS
2
7
TP3
TP1
3
6
SCL
TP2
4
5
SDA
1
INTEGRAL