HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) VDSS ID25 500 V 24 A 500 V 22 A trr ≤ 250 ns RDS(on) 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, Pulse width limited by TJM IAR TC = 25°C 24 22 104 96 26 24 A A A A A A 30 1.5 mJ J 5 V/ns 250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g EAR EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 26N50Q 24N50Q 26N50Q 24N50Q 26N50Q 24N50Q TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 minute leads-to-tab Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250uA 500 2.5 VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VGS = 10 V, ID = IT Notes 1 & 2 26N50Q 24N50Q © 2001 IXYS All rights reserved V 4.5 V ±100 nA 25 1 µA mA 0.20 0.23 Ω Ω ISOPLUS 247TM E153432 G G = Gate S = Source Isolated back surface* D D = Drain * Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly: no screws, or isolation foils required l Space savings l High power density l Low collector capacitance to ground (low EMI) 98664A (5/01) IXFR 24N50Q IXFR 26N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = IT Note 1 14 24 S 3900 pF 500 pF Crss 130 pF td(on) 28 ns 30 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT td(off) RG = 1 Ω (External), 55 ns tf 16 ns Qg(on) 95 nC 27 nC 40 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd 0.50 RthJC Source-Drain Diode Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 IF = Is, -di/dt = 100 A/µs, VR = 100 V K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol t rr QRM IRM K/W 0.15 RthCK ISOPLUS 247 OUTLINE TJ = 25°C TJ = 25°C TJ = 25°C 0.85 8 26 A 104 A 1.3 V 250 1.5 ns µC A Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXFR26N50Q IT = 13A 2. IT test current: IXFR24N50Q IT = 12A 3. See IXFH26N50Q data sheet for characteristic curves. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025