HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS(on) = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IL(RMS) IDM TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM IAR 85 85 V V ±20 ±30 V V 80 45 75 A A A TC = 25°C 320 A EAR EAS TC = 25°C 30 1.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 230 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s FC Mounting force VISOL 50/60 Hz, RMS 11..65/2.4..11 Nm/lb t = 1 minute leads-to-tab Weight 2500 V~ 2 g ISOPLUS220TM G D S Isolated back surface* G = Gate, S = Source D = Drain, * Patent pending Features z z z z z z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsicRectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 85 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 1, 2 © 2004 IXYS All rights reserved V z z z z z 4.0 ±100 V nA Advantages z TJ = 25°C TJ = 125°C 50 µA 1 mA 11 mΩ DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control z z z Easy assembly: no screws or isolation foils required Space savings High power density Low collector capacitance to ground (low EMI) DS98851D(05/04) IXFC 80N085 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = IT Notes 1, 2 35 Ciss Coss V GS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 55 S 4800 pF 1675 pF 590 pF 50 ns tr V GS = 10 V, VDS = 0.5 • VDSS, 75 ns td(off) ID = 0.5 • ID25, RG = 2.5 Ω (External) 95 ns 31 ns tf Qg(on) 180 nC Qgs V GS = 10 V, VDS = 0.5 • VDSS, ID = IT 42 nC Qgd Notes 2 75 nC RthJC 0.54 0.25 RthCK Source-Drain Diode Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 QRM IRM K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol t rr ISOPLUS220LV Outline IF = 25A -di/dt = 100 A/µs, VR = 50 V 80 A 320 A 1.5 V 200 ns 0.5 µC 6 A Notes: 1. Lead 1 = Gate 2. Lead 2 = Drain 3. Lead 3 = Source 4. Back surface 4 is electrically isolated from leads 1, 2 & 3 Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2. IT = 40A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585