ADVANCE TECHNICAL INFORMATION Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS(on) = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 12 A IDM TC = 25°C, pulse width limited by TJM 48 A IAR TC = 25°C 13 A EAR TC = 25°C 18 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 140 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C l 300 °C l 3 g TJ TL 1.6 mm (0.062 in.) from case for 10 s Weight G D S G = Gate, S = Source Isolated back surface* D = Drain, * Patent pending Features l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Applications l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 2.5 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = IT Notes 1, 2 © 2001 IXYS All rights reserved l TJ = 25°C TJ = 125°C V 4 V ±100 nA l DC-DC converters Batterychargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages 200 1 µA mA 0.4 Ω l l l l Easy assembly: no screws or isolation foils required Space savings High power density Low collector capacitance to ground (low EMI) 98823 (05/01) IXTC 13N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0; IT Notes 1, 2 7.5 Ciss Coss 9.0 S 2800 pF 300 pF 70 pF V GS = 0 V, VDS = 25 V, f = 1 MHz Crss 18 30 ns tr V GS = 10 V, VDS = 0.5 VDSS, 27 40 ns td(off) ID = 0.5 ID25, RG = 4.7 Ω (External) 76 100 ns 32 60 ns 110 120 nC 15 25 nC 40 50 nC 0.90 K/W td(on) tf Qg(on) Qgs V GS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd RthJC 0.30 RthCK Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 V 13 A ISM Repetitive; pulse width limited by TJM 52 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = IS -di/dt = 100 A/µs, VR = 100 V 600 ISOPLUS220 OUTLINE Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source ns Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IT = 6.5A 2. IT test current: 3. See IXTH12N50A data sheet for characteristic curves. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025