ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC13N50 VDSS ID25 RDS(on) trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family = 500 = 12 = 0.4 ≤ 250 V A Ω ns ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V G ID25 TC = 25°C 12 A IDM TC = 25°C, pulse width limited by TJM 48 A IAR TC = 25°C 13 A EAR TC = 25°C 18 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 140 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C z 300 °C z 3 g TJ TL 1.6 mm (0.062 in.) from case for 10 s Weight D S G = Gate S = Source Isolated back surface* D = Drain Features z z z z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated FastintrinsicRectifier Applications z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 2.5 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = IT Notes 1, 2 © 2003 IXYS All rights reserved TJ = 25°C TJ = 125°C z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control V Advantages 4 V z ±100 nA 200 1 µA mA 0.4 Ω z z z Easy assembly: no screws or isolation foils required Space savings High power density Low collector capacitance to ground (low EMI) See IXFH13N50 data sheet for characteristic curves DS98756(7/03) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0; IT Notes 1, 2 7.5 Ciss Coss V GS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 9.0 S 2800 pF 300 pF 70 pF 18 30 ns tr V GS = 10 V, VDS = 0.5 • VDSS, 27 40 ns td(off) ID = 0.5 • ID25, RG = 4.7 Ω (External) 76 100 ns 32 60 ns 110 120 nC tf Qg(on) Qgs V GS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd 15 25 nC 40 50 nC 0.90 K/W RthJC 0.30 RthCK Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 V 13 A ISM Repetitive; pulse width limited by TJM 52 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 350 ns ns t rr QRM IF = IS -di/dt = 100 A/µs, VR = 100 V IRM ISOPLUS220 Outline TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 0.6 1.25 µC µC TJ = 25°C TJ = 125°C 9 15 A A Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IT = 6.5A 2. IT test current: 3. See IXFH13N50 data sheet for characteristic curves. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343