IXYS IXFC13N50

ADVANCED TECHNICAL INFORMATION
HiPerFETTM MOSFET
IXFC13N50
VDSS
ID25
RDS(on)
trr
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
= 500
= 12
= 0.4
≤ 250
V
A
Ω
ns
ISOPLUS 220TM
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
G
ID25
TC = 25°C
12
A
IDM
TC = 25°C, pulse width limited by TJM
48
A
IAR
TC = 25°C
13
A
EAR
TC = 25°C
18
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
140
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
z
300
°C
z
3
g
TJ
TL
1.6 mm (0.062 in.) from case for 10 s
Weight
D
S
G = Gate
S = Source
Isolated back surface*
D = Drain
Features
z
z
z
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
FastintrinsicRectifier
Applications
z
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 µA
500
VGS(th)
VDS = VGS, ID = 2.5 mA
2
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
RDS(on)
V GS = 10 V, ID = IT
Notes 1, 2
© 2003 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
z
z
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
V
Advantages
4
V
z
±100
nA
200
1
µA
mA
0.4
Ω
z
z
z
Easy assembly: no screws or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
See IXFH13N50 data sheet for
characteristic curves
DS98756(7/03)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = 10 V; ID = 0; IT Notes 1, 2
7.5
Ciss
Coss
V GS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
9.0
S
2800
pF
300
pF
70
pF
18
30
ns
tr
V GS = 10 V, VDS = 0.5 • VDSS,
27
40
ns
td(off)
ID = 0.5 • ID25, RG = 4.7 Ω (External)
76
100
ns
32
60
ns
110 120
nC
tf
Qg(on)
Qgs
V GS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
15
25
nC
40
50
nC
0.90
K/W
RthJC
0.30
RthCK
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
V GS = 0 V
13
A
ISM
Repetitive; pulse width limited by TJM
52
A
VSD
IF = IS, VGS = 0 V,
Note 1
1.5
V
250
350
ns
ns
t rr
QRM
IF = IS
-di/dt = 100 A/µs,
VR = 100 V
IRM
ISOPLUS220 Outline
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
0.6
1.25
µC
µC
TJ = 25°C
TJ = 125°C
9
15
A
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IT = 6.5A
2. IT test current:
3. See IXFH13N50 data sheet for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343