APTC80H15T3G Full - Bridge VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 13 14 Q1 Q3 18 11 7 23 8 19 10 Q2 Q4 26 4 27 3 30 29 16 R1 23 22 • • 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 • • 32 31 15 28 27 26 25 Features • 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 28 21 110 ±30 150 277 24 0.5 670 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTC80H15T3G – Rev 1 December, 2005 22 APTC80H15T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Test Conditions Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt trr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X Reverse Recovery Time Qrr Reverse Recovery Charge 2.1 3 Min Typ 4507 2092 108 180 VGS = 10V VBus = 400V ID = 28A Unit Max Unit µA mΩ V nA pF nC 90 Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5Ω Test Conditions 10 13 83 ns 35 486 µJ 278 850 µJ 342 Min Tc = 25°C Tc = 80°C Typ 28 21 VGS = 0V, IS = - 28A IS = - 28A VR = 400V diS/dt = 200A/µs Max 50 375 150 3.9 ±150 22 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C Tj = 125°C Max Unit A 1.2 6 Tj = 25°C 550 V V/ns ns Tj = 25°C 30 µC X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 28A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2–6 APTC80H15T3G – Rev 1 December, 2005 Symbol APTC80H15T3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 1.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.45 150 125 100 4.7 110 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min R 25 Typ 50 3952 Max Unit °C/W V °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T 28 17 1 12 APT website – http://www.advancedpower.com 3–6 APTC80H15T3G – Rev 1 December, 2005 SP3 Package outline (dimensions in mm) APTC80H15T3G Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 VGS=15&10V 6.5V 60 50 6V 40 5.5V 30 5V 20 4.5V 10 60 40 TJ =25°C 20 TJ =125°C 4V 0 T J=-55°C 0 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 30 Normalized to V GS=10V @ 14A 1.3 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 80 VGS=10V 1.2 VGS=20V 1.1 1 0.9 25 20 15 10 5 0 0.8 0 10 20 30 40 I D, Drain Current (A) 50 60 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTC80H15T3G – Rev 1 December, 2005 ID, Drain Current (A) 70 ID, Drain Current (A) 100 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 50 100 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 100 0 50 100 1 1000 Coss 100 Crss 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10ms Single pulse TJ =150°C 1 VGS, Gate to Source Voltage (V) Ciss 1ms 0 TC, Case Temperature (°C) 10000 100µs 100ms 150 Capacitance vs Drain to Source Voltage 100000 limited by RDSon 10 0.7 -50 C, Capacitance (pF) V GS=10V ID= 14A 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=28A TJ=25°C 14 V DS =160V 12 V DS =400V 10 8 VDS=640V 6 4 2 0 0 40 APT website – http://www.advancedpower.com 80 120 160 200 Gate Charge (nC) 5–6 APTC80H15T3G – Rev 1 December, 2005 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80H15T3G APTC80H15T3G Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 V DS=533V RG=2.5Ω T J=125°C L=100µH 60 40 t r and tf (ns) t d(on) 20 30 VDS=533V RG=2.5Ω T J=125°C L=100µH 20 10 0 0 10 20 30 40 I D, Drain Current (A) 50 10 1200 Switching Energy (µJ) Eon and Eoff (µJ) 2500 VDS=533V RG=2.5Ω TJ=125°C L=100µH Eon 900 600 Eoff 300 20 30 40 I D, Drain Current (A) 50 Switching Energy vs Gate Resistance Switching Energy vs Current 1500 V DS=533V ID=28A T J=125°C L=100µH 2000 1500 Eon 1000 Eon Eoff 500 0 0 10 20 30 40 I D, Drain Current (A) 0 50 350 ZVS 300 250 200 VDS=533V D=50% RG=2.5Ω TJ=125°C TC=75°C ZCS 150 100 50 0 6 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) IDR , Reverse Drain Current (A) Operating Frequency vs Drain Current 400 Frequency (kHz) tr 5 10 15 20 Gate Resistance (Ohms) 25 Source to Drain Diode Forward Voltage 1000 100 T J=150°C 10 T J=25°C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTC80H15T3G – Rev 1 December, 2005 td(on) and td(off) (ns) t d(off) 80