APTM20DAM10T Boost chopper MOSFET Power Module VBUS NT C2 VBUS SENSE CR1 OUT Q2 G2 S2 0/VBU S NT C1 G2 S2 VBUS VBUS SENSE 0/VBUS OUT OUT S2 NTC2 G2 NTC1 VDSS = 200V RDSon = 10mW max @ Tj = 25°C ID = 175A @ Tc = 25°C Application · AC and DC motor control · Switched Mode Power Supplies · Power Factor Correction Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 175 131 700 ±30 10 694 89 50 2500 Unit V A V mW W A May, 2004 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20DAM10T – Rev 2 Symbol VDSS APTM20DAM10T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 375µA Min 200 Zero Gate Voltage Drain Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 87.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Typ Tj = 25°C Tj = 125°C 3 Max Unit V 150 750 10 5 ±150 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 100V ID = 150A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v nF nC 86 94 28 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A RG = 2.5W Rise Time Typ 13.7 4.36 0.19 224 56 ns 81 99 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 926 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 1216 µJ 910 µJ 1062 Diode ratings and characteristics Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Tj = 125°C Typ 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Tc = 85°C Max Unit A 1.15 V ns May, 2004 VF Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM20DAM10T – Rev 2 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM20DAM10T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink 2500 -40 -40 -40 Max 0.18 0.46 Unit °C/W V 150 125 100 4.7 160 M5 °C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = Min Typ 68 4080 Max Unit kW K R 25 é æ 1 1 öù T: Thermistor temperature - ÷÷ú RT: Thermistor value at T exp ê B25 / 85 çç è T25 T øû ë APT website – http://www.advancedpower.com 3–6 APTM20DAM10T – Rev 2 May, 2004 Package outline APTM20DAM10T Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.14 0.7 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 9V 400 7.5V 300 7V 200 6.5V 6V 100 ID, Drain Current (A) 300 200 TJ=25°C 100 TJ=125°C 5.5V 0 0 5 10 15 20 25 2 VDS, Drain to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current Normalized to VGS=10V @ 87.5A 1.1 VGS=10V 1.05 1 VGS=20V 0.95 0.9 0 40 80 120 160 200 ID, Drain Current (A) 240 ID, DC Drain Current (A) 1.2 1.15 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 May, 2004 0 RDS(on) Drain to Source ON Resistance T J=-55°C 4–6 APTM20DAM10T – Rev 2 ID, Drain Current (A) VGS=15&10V Transfert Characteristics 400 500 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area limited by RDSon 100µs 100 1ms 10ms 10 0.7 DC line Single pulse TJ=150°C 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=150A 10 TJ=25°C VDS=100V 8 VDS=160V 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) May, 2004 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 87.5A 1000 1.2 1.1 ON resistance vs Temperature 2.5 APT website – http://www.advancedpower.com 5–6 APTM20DAM10T – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20DAM10T APTM20DAM10T Rise and Fall times vs Current 90 160 80 140 td(off) 70 VDS=133V RG=2.5Ω TJ=125°C L=100µH 60 50 40 30 100 80 tr 60 20 10 0 0 50 100 150 200 250 300 0 50 ID, Drain Current (A) Eon Eoff 1 0.5 0 250 300 VDS=133V ID=150A TJ=125°C L=100µH 2.5 Eoff Eon 2 1.5 1 0 50 100 150 200 250 0 300 ID, Drain Current (A) 250 200 150 100 50 0 40 60 80 100 120 140 160 ID, Drain Current (A) 10 15 20 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20DAM10T – Rev 2 May, 2004 20 IDR, Reverse Drain Current (A) VDS=133V D=50% RG=2.5Ω TJ=125°C 300 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 350 Frequency (kHz) 200 3 Switching Energy (mJ) Eon and Eoff (mJ) 1.5 150 Switching Energy vs Gate Resistance Switching Energy vs Current VDS=133V RG=2.5Ω TJ=125°C L=100µH 100 ID, Drain Current (A) 2.5 2 tf 40 td(on) 20 VDS=133V RG=2.5Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) and td(off) (ns) Delay Times vs Current