ADPOW APTM50DSK10T3

APTM50DSK10T3
Dual Buck chopper
MOSFET Power Module
13 14
Q1
Application
• AC and DC motor control
• Switched Mode Power Supplies
Q2
11
18
22
7
19
10
23
CR1
29
30
8
CR2
31
15
32
16
R1
28 27 26 25
23 22
20 19 18
29
16
30
15
31
14
32
13
2
3
4
7
8
VDSS = 500V
RDSon = 100mΩ max @ Tj = 25°C
ID = 37A @ Tc = 25°C
10 11 12
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
buck of twice the current capability
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
37
28
140
±30
100
312
41
50
1600
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTM50DSK10T3 – Rev 1 December, 2004
Absolute maximum ratings
APTM50DSK10T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V
VDS = 500V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Maximum Reverse Leakage Current
VR=600V
IF(A V)
Maximum Average Forward Current
50% duty cycle
Diode Forward Voltage
IF = 30A
IF = 60A
IF = 30A
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt=200A/µs
Unit
Max
Unit
µA
mΩ
V
nA
pF
nC
49
Test Conditions
IRM
Typ
4367
894
61
96
Max
100
500
100
5
±100
24
15
21
52
566
µJ
545
931
µJ
635
Min
600
Tj = 25°C
Tj = 125°C
Tc = 70°C
ns
73
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 37A, R G = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 37A, R G = 5Ω
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
trr
Min
VGS = 10V
VBus = 250V
ID = 37A
Diode ratings and characteristics
Typ
3
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 37A
R G = 5Ω
Tf
VF
Min
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 18.5A
VGS = VDS, ID = 1mA
VGS = ±30 V, VDS = 0V
Typ
Max
250
750
Tj = 150°C
30
2.2
2.7
1.5
Tj = 25°C
74
Tj = 100°C
74
Tj = 25°C
123
Tj = 100°C
288
Unit
V
µA
A
2.7
V
ns
nC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2-6
APTM50DSK10T3 – Rev 1 December, 2004
Symbol
APTM50DSK10T3
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
Min
R 25

 1
1 
exp  B25 / 85 
− 
T
T
25



Unit
°C/W
V
150
125
100
4.7
110
M4
Temperature sensor NTC
RT =
2500
-40
-40
-40
Max
0.4
1.2
Typ
68
4080
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature
RT : Thermistor value at T
28
17
1
12
APT website – http://www.advancedpower.com
3-6
APTM50DSK10T3 – Rev 1 December, 2004
Package outline
APTM50DSK10T3
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.9
0.35
0.7
0.3
0.25
0.5
0.2
0.3
0.15
0.1
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
8V
VGS=10&15V
120
7.5V
I D, Drain Current (A)
I D, Drain Current (A)
10
120
140
100
7V
80
6.5V
60
40
6V
20
5.5V
VDS > ID(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
80
60
40
T J=25°C
20
T J=125°C
T J=-55°C
0
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
RDS(on) vs Drain Current
1.20
Normalized to
V GS=10V @ 18.5A
1.15
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
40
VGS =10V
I D, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
1
1.10
1.05
VGS =20V
1.00
0.95
0.90
30
20
10
0
0
20
40
60
ID, Drain Current (A)
80
25
50
75
100
125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
4-6
APTM50DSK10T3 – Rev 1 December, 2004
Thermal Impedance (°C/W)
0.45
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25 50
75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=18.5A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.1
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
0.6
100µs
100
1ms
10
Single pulse
TJ =150°C
10ms
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
1000
Coss
100
VGS , Gate to Source Voltage (V)
10000
Crss
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
50
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
100000
C, Capacitance (pF)
limited
by R
limited
byDSon
RDSon
ID=37A
T J=25°C
12
V DS =100V
VDS=250V
10
VDS=400V
8
6
4
2
0
0
20
APT website – http://www.advancedpower.com
40 60 80 100 120 140
Gate Charge (nC)
5-6
APTM50DSK10T3 – Rev 1 December, 2004
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50DSK10T3
APTM50DSK10T3
Delay Times vs Current
Rise and Fall times vs Current
100
td(off)
60
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
40
td(on)
20
60
40
tr
0
10
20
30
40
50
60
ID, Drain Current (A)
70
10
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
1.6
1.2
40
50
60
70
Switching Energy vs Gate Resistance
Eon
Eoff
0.8
30
2.5
Switching Energy (mJ)
2
20
I D, Drain Current (A)
Switching Energy vs Current
0.4
Eoff
V DS=333V
ID=35A
T J=125°C
L=100µH
2
1.5
Eon
1
0.5
0
0
20
30
40
50
0
60
10
I D, Drain Current (A)
Operating Frequency vs Drain Current
ZCS
300
IDR, Reverse Drain Current (A)
V DS=333V
D=50%
R G=5Ω
T J=125°C
T C=75°C
350
250
200
ZVS
150
hard
switching
100
50
0
5
10
15
20
25
ID, Drain Current (A)
30
40
50
Gate Resistance (Ohms)
450
400
20
30
35
1000
100
Source to Drain Diode Forward Voltage
TJ =150°C
10
TJ=25°C
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTM50DSK10T3 – Rev 1 December, 2004
10
Frequency (kHz)
tf
20
0
Switching Energy (mJ)
VDS=333V
RG=5Ω
T J=125°C
L=100µH
80
t r and tf (ns)
t d(on) and td(off) (ns)
80